US5380555A
Expired / Lapsed
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Methods for the formation of a silicon oxide film
Assignee: Dow Silicones Corp
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Filing: 1994-01-26
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Granted: 1995-01-10
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Expires: 2014-01-26
Abstract
Abstract Disclosed is a method for the formation of ceramic silicon oxide films on substrate surfaces wherein said films are thick, free of cracks and pinholes, and insoluble in organic solvents. These films are formed by coating the surface of a substrate with a silicon resin having the general formula (HR.sub.2 SiO.sub.1/2).sub.X (SiO.sub.4/2).sub.1.0 wherein R is selected from the set comprising the hydrogen atom, alkyl groups, and aryl groups, and 0.1≦X≦2.0, and then heating the coated substrate to convert the coating into a ceramic silicon oxide film.
Inventors
- 👤 Katsutoshi Mine
- 👤 Takashi Nakamura
- 👤 Motoshi Sasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 01:32
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; C; C03; C03C; C03C17/00; C03C17/22; C03C17/23; C04; C04B; C04B41/00; C04B41/009; C04B41/45; C04B41/50; C04B41/5025; C04B41/5035; C04B41/80; C04B41/81; C04B41/85; C04B41/87; C23; C23C; C23C18/00; C23C18/02; C23C18/12; C23C18/1204; C23C18/1208; C23C18/1212; C23C18/125; C23C18/1279; C03C2217/00; C03C2217/20; C03C2217/21; C03C2217/213; C03C2218/00; C03C2218/10; C03C2218/17; C04B2111/00; C04B2111/00474; C04B2111/00844; H10P14/63; H10P14/6326; H10P14/6342; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10P14/6922
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
76 words
A method for the formation of a silicon oxide film on a substrate comprising: forming a coating on the surface of a substrate, wherein the base component of the coating is a silicon resin with the general formula (HR.sub.2 SiO.sub.1/2).sub.X (SiO.sub.4/2).sub.1.0 and wherein R is selected from the group consisting of the hydrogen atom, alkyl groups, and aryl groups and 0.1≦X≦2.0; and converting the coating into a ceramic silicon oxide film by heating the coated substrate.
Claim 2
Independent Claim
76 words
A method for the formation of a silicon oxide film on a substrate comprising: forming a coating on the surface of a substrate, wherein the base component of the coating is a silicon resin with the general formula (HR.sub.2 SiO.sub.1/2).sub.X (SiO.sub.4/2).sub.1.0 and wherein R is selected from the group consisting of the hydrogen atom, alkyl groups, and aryl groups and 0.1≦X≦2.0; and converting the coating into a ceramic silicon oxide film by heating the coated substrate.
Claim 3
Dependent Claim
7 words
The method of claim 1 wherein 0.3≦X≦1.0.
Claim 4
Dependent Claim
29 words
The method of claim 1 wherein the silicon resin has a weight-average molecular weight which does not exceed 100,000 and a softening point which does not exceed 400° C.
Claim 5
Dependent Claim
26 words
The method of claim 1 wherein the coating also contains materials selected from the group consisting of platinum compounds, acid catalysts, alcohols, and low-molecular-weight silanol-terminated siloxanes.
Claim 6
Dependent Claim
24 words
The method of claim 1 wherein the substrate is selected from the group consisting of glass substrates, ceramic substrates, metal substrates, and semiconductor devices.
Claim 7
Dependent Claim
21 words
The method of claim 1 wherein the coated substrate is heated to at least 300° C. for at least 30 minutes.
Claim 8
Independent Claim
88 words
A method for the formation of a silicon oxide film on a substrate comprising: forming a coating on the surface of a substrate, wherein the base component of the coating is a silicon resin with the general formula (HR.sub.2 SiO.sub.1/2).sub.X (SiO.sub.4/2).sub.1.0 and wherein R is selected from the group consisting of the hydrogen atom, alkyl groups, and aryl groups and 0.1≦X≦2.0; and converting the coating into a ceramic silicon oxide film by heating the coated substrate ill an atmosphere that contains less than 20 volume % oxygen gas.
Claim 9
Independent Claim
88 words
A method for the formation of a silicon oxide film on a substrate comprising: forming a coating on the surface of a substrate, wherein the base component of the coating is a silicon resin with the general formula (HR.sub.2 SiO.sub.1/2).sub.X (SiO.sub.4/2).sub.1.0 and wherein R is selected from the group consisting of the hydrogen atom, alkyl groups, and aryl groups and 0.1≦X≦2.0; and converting the coating into a ceramic silicon oxide film by heating the coated substrate ill an atmosphere that contains less than 20 volume % oxygen gas.
Claim 10
Dependent Claim
7 words
The method of claim 7 wherein 0.2≦X≦1.0.
Claim 11
Dependent Claim
29 words
The method of claim 7 wherein the silicon resin has a weight-average molecular weight which does not exceed 100,000 and a softening point which does not exceed 400° C.
Claim 12
Dependent Claim
26 words
The method of claim 7 wherein the coating also contains materials selected from the group consisting of platinum compounds, acid catalysts, alcohols, and low-molecular-weight silanol-terminated siloxanes.
Claim 13
Dependent Claim
24 words
The method of claim 7 wherein the substrate is selected from the group consisting of glass substrates, ceramic substrates, metal substrates, and semiconductor devices.
Claim 14
Dependent Claim
21 words
The method of claim 7 wherein the coated substrate is heated to at least 300° C. for at least 30 minutes.
Claim 15
Independent Claim
88 words
A method for the formation of a silicon oxide film on a substrate comprising: forming a coating on the surface of a substrate, wherein the base component of the coating is a silicon resin with the general formula (HR.sub.2 SiO.sub.1/2).sub.X (SiO.sub.4/2).sub.1.0 and wherein R is selected from the group consisting of the hydrogen atom, alkyl groups, and aryl groups and 0.1≦X≦2.0; and converting the coating into a ceramic silicon oxide film by heating the coated substrate in an atmosphere that contains at least 20 volume % oxygen gas.
Claim 16
Independent Claim
88 words
A method for the formation of a silicon oxide film on a substrate comprising: forming a coating on the surface of a substrate, wherein the base component of the coating is a silicon resin with the general formula (HR.sub.2 SiO.sub.1/2).sub.X (SiO.sub.4/2).sub.1.0 and wherein R is selected from the group consisting of the hydrogen atom, alkyl groups, and aryl groups and 0.1≦X≦2.0; and converting the coating into a ceramic silicon oxide film by heating the coated substrate in an atmosphere that contains at least 20 volume % oxygen gas.
Claim 17
Dependent Claim
7 words
The method of claim 13 wherein 0.2≦X≦1.0.
Claim 18
Dependent Claim
29 words
The method of claim 13 wherein the silicon resin has a weight-average molecular weight which does not exceed 100,000 and a softening point which does not exceed 400° C.
Claim 19
Dependent Claim
26 words
The method of claim 13 wherein the coating also contains materials selected from the group consisting of platinum compounds, acid catalysts, alcohols, and low-molecular-weight silanol-terminated siloxanes.
Claim 20
Dependent Claim
24 words
The method of claim 13 wherein the substrate is selected from the group consisting of glass substrates, ceramic substrates, metal substrates, and semiconductor devices.
Claim 21
Dependent Claim
21 words
The method of claim 13 wherein the coated substrate is heated to at least 300° C. for at least 30 minutes.
References Cited (Backward Citations)
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