Patent US5923033A successfully refreshed from Google Patents.
US5923033A
Expired / Lapsed
US
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Integrated SPM sensor having a photodetector mounted on a probe on a free end of a supported cantilever
Assignee: Olympus Corp
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Filing: 1995-09-12
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Granted: 1999-07-13
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Expires: 2015-09-12
Abstract
Abstract An integrated SPM sensor including a cantilever having a probe on its free end, a supporting base for supporting the cantilever on its fixed end, and signal lines for conducting a signal picked up by the probe. The probe is a photodetector element constructed of any of a junction gate-type photo FET, a Schottky gate-type photo FET, an MOS-type photodiode and a Schottky-type photodiode. The integrated SPM sensor substantially lowers noise due to thermally excited dark current and easily detects weak incident light.
Inventors
- 👤 Michio Takayama
- 👤 Kazuya Matsumoto
- 👤 Yoshitaka Kamiya
- 👤 Mamoru Hasegawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-10 01:20
CPC Classifications
G; G01; G01Q; G01Q20/00; G01Q20/02; B; B82; B82Y; B82Y35/00; G01Q20/04; G01Q70/00; G01Q70/08; G01Q70/14; Y; Y10; Y10S; Y10S977/00; Y10S977/84; Y10S977/849; Y10S977/86; Y10S977/868; Y10S977/873
Claims Analysis
Total Claims: 45
Claim 1
Independent Claim
105 words
An integrated SPM sensor, comprising: a cantilever constructed of an n-type semiconductor and having a probe on a free end of the cantilever; a supporting base constructed of an n-type semiconductor for supporting a fixed end of the cantilever; a photodetector mounted on the probe; and signal lines for conducting a signal picked up by the photodetector, wherein a tip portion of a region insensitive to an incident light and existing in a top portion of a photoelectric conversion region of said photodetector mounted on the probe is set to be equal to or less than approximately half an absorption length of an incident light.
Claim 2
Dependent Claim
105 words
An integrated SPM sensor, comprising: a cantilever constructed of an n-type semiconductor and having a probe on a free end of the cantilever; a supporting base constructed of an n-type semiconductor for supporting a fixed end of the cantilever; a photodetector mounted on the probe; and signal lines for conducting a signal picked up by the photodetector, wherein a tip portion of a region insensitive to an incident light and existing in a top portion of a photoelectric conversion region of said photodetector mounted on the probe is set to be equal to or less than approximately half an absorption length of an incident light.
Claim 3
Dependent Claim
89 words
An integrated SPM sensor, comprising: a cantilever constructed of an n-type semiconductor and having a probe on a free end of the cantilever; a supporting base constructed of an n-type semiconductor for supporting a fixed end of the cantilever; a photodetector mounted on the probe; and signal lines for conducting a signal picked up by photodetector; wherein a thickness of a photoelectric conversion region of said photodetector mounted on the probe is set to be equal to or greater than approximately twice an absorption length of an incident light.
Claim 4
Dependent Claim
89 words
An integrated SPM sensor, comprising: a cantilever constructed of an n-type semiconductor and having a probe on a free end of the cantilever; a supporting base constructed of an n-type semiconductor for supporting a fixed end of the cantilever; a photodetector mounted on the probe; and signal lines for conducting a signal picked up by photodetector; wherein a thickness of a photoelectric conversion region of said photodetector mounted on the probe is set to be equal to or greater than approximately twice an absorption length of an incident light.
Claim 5
Dependent Claim
89 words
An integrated SPM sensor, comprising: a cantilever constructed of an n-type semiconductor and having a probe on a free end of the cantilever; a supporting base constructed of an n-type semiconductor for supporting a fixed end of the cantilever; a photodetector mounted on the probe; and signal lines for conducting a signal picked up by the photodetector, wherein a tip portion of a region insensitive to an incident light and existing in a top portion of a photoelectric conversion region of said photodetector mounted on the probe is removed.
Claim 6
Dependent Claim
89 words
An integrated SPM sensor, comprising: a cantilever constructed of an n-type semiconductor and having a probe on a free end of the cantilever; a supporting base constructed of an n-type semiconductor for supporting a fixed end of the cantilever; a photodetector mounted on the probe; and signal lines for conducting a signal picked up by the photodetector, wherein a tip portion of a region insensitive to an incident light and existing in a top portion of a photoelectric conversion region of said photodetector mounted on the probe is removed.
Claim 7
Dependent Claim
71 words
An integrated SPM sensor comprising: a cantilever constructed of a semiconductor and having a probe on a free end of the cantilever; a heavily-doled diffusion layer formed at least on side surfaces other than a surface on which a probe is formed of the cantilever and a rear surface thereof; a supporting base for supporting a fixed end of the cantilever; and a physical quantity-to-current converting sensor mounted on the cantilever.
Claim 8
Dependent Claim
71 words
An integrated SPM sensor comprising: a cantilever constructed of a semiconductor and having a probe on a free end of the cantilever; a heavily-doled diffusion layer formed at least on side surfaces other than a surface on which a probe is formed of the cantilever and a rear surface thereof; a supporting base for supporting a fixed end of the cantilever; and a physical quantity-to-current converting sensor mounted on the cantilever.
Claim 9
Dependent Claim
19 words
The integrated SPM sensor according to claim 4, wherein said heavily-doped diffusion layer surrounds said physical quantity-to-current converting sensor.
Claim 10
Dependent Claim
31 words
The integrated SPM sensor according to any of claims 4 and 5, wherein said physical quantity-to-current converting sensor is a semiconductor photodetector in a vicinity of the probe in the cantilever.
Claim 11
Dependent Claim
32 words
The integrated SPM sensor according to claim 6, wherein said semiconductor photodetector is provided, on its surface, with a thin layer transparent to an incident light and meeting substantially a nonreflective condition.
Claim 12
Dependent Claim
52 words
The integrated SPM sensor according to claim 6, wherein a thickness of a region insensitive to an incident light and existing in a top portion of a photoelectric conversion region of said semiconductor photodetector is set to be equal to or smaller than approximately half an absorption length of the incident light.
Claim 13
Dependent Claim
38 words
The integrated SPM sensor according to claim 6, wherein a thickness of a photoelectric conversion region of said semiconductor photodetector is set to be equal to or greater than approximately twice an absorption length of an incident light.
Claim 14
Dependent Claim
37 words
The integrated SPM sensor according to claim 6, wherein a tip portion of a region insensitive to an incident light and existing in a top portion of a photoelectric conversion region of said semiconductor photodetector is removed.
Claim 15
Dependent Claim
22 words
The integrated SPM sensor according to any of claims 4 and 5, wherein said physical quantity-to-current converting sensor is a strain detector.
Claim 16
Dependent Claim
24 words
The integrated SPM sensor according to any of claims 4 and 5, wherein said physical quantity-to-current converting sensor comprises two or more different detectors.
Claim 17
Dependent Claim
36 words
The integrated SPM sensor according to claim 12, wherein said physical quantity-to-current converting sensor comprises a semiconductor photodetector mounted in a vicinity of the probe of the cantilever and a strain detector mounted on the cantilever.
Claim 18
Dependent Claim
30 words
The integrated SPM sensor according to claim 13, wherein said semiconductor photodetector is provided, on its surface, with a thin layer transparent to an incident light and is substantially nonreflective.
Claim 19
Dependent Claim
52 words
The integrated SPM sensor according to claim 13, wherein a thickness of a region insensitive to an incident light and existing in a top portion of a photoelectric conversion region of said semiconductor photodetector is set to be equal to or smaller than approximately half an absorption length of the incident light.
Claim 20
Dependent Claim
38 words
The integrated SPM sensor according to claim 13, wherein a thickness of a photoelectric conversion region of said semiconductor photodetector is set to be equal to or greater than approximately twice an absorption length of an incident light.
Claim 21
Dependent Claim
37 words
The integrated SPM sensor according to claim 13, wherein a tip portion of a region insensitive to an incident light and existing in a top portion of a photoelectric conversion region of said semiconductor photodetector is removed.
Claim 22
Dependent Claim
98 words
An integrated SPM sensor, comprising: a probe constructed of a photodetector of a junction gate-type photo FET; a cantilever having said probe on a free end of the cantilever; a supporting base for supporting a fixed end of the cantilever; and signal lines for conducting a signal picked up by said probe; wherein a thickness of a region insensitive to an incident light and existing in a top portion of a photoelectric conversion region of said photodetector forming the probe is set to be equal to or less than approximately half an absorption length of the incident light.
Claim 23
Dependent Claim
98 words
An integrated SPM sensor, comprising: a probe constructed of a photodetector of a junction gate-type photo FET; a cantilever having said probe on a free end of the cantilever; a supporting base for supporting a fixed end of the cantilever; and signal lines for conducting a signal picked up by said probe; wherein a thickness of a region insensitive to an incident light and existing in a top portion of a photoelectric conversion region of said photodetector forming the probe is set to be equal to or less than approximately half an absorption length of the incident light.
Claim 24
Dependent Claim
84 words
An integrated SPM sensor, comprising: a probe constructed of a photodetector of a junction gate-type photo FET; a cantilever having said probe on a free end of the cantilever; a supporting base for supporting a fixed end of the cantilever; signal lines for conducting a signal picked up by said probe; and wherein a thickness of a photoelectric conversion region of said photodetector forming the probe is set to be equal to or greater than approximately twice an absorption length of an incident light.
Claim 25
Dependent Claim
84 words
An integrated SPM sensor, comprising: a probe constructed of a photodetector of a junction gate-type photo FET; a cantilever having said probe on a free end of the cantilever; a supporting base for supporting a fixed end of the cantilever; signal lines for conducting a signal picked up by said probe; and wherein a thickness of a photoelectric conversion region of said photodetector forming the probe is set to be equal to or greater than approximately twice an absorption length of an incident light.
Claim 26
Dependent Claim
83 words
An integrated SPM sensor, comprising: a probe constructed of a photodetector of a function gate-type photo FET; a cantilever having said probe on a free end of the cantilever; a supporting base for supporting a fixed end of the cantilever; and signal lines for conducting a signal picked up by said probe; wherein a tip portion of a region insensitive to an incident light and existing in a top portion of a photoelectric conversion region of said photodetector forming the probe is removed.
Claim 27
Dependent Claim
83 words
An integrated SPM sensor, comprising: a probe constructed of a photodetector of a function gate-type photo FET; a cantilever having said probe on a free end of the cantilever; a supporting base for supporting a fixed end of the cantilever; and signal lines for conducting a signal picked up by said probe; wherein a tip portion of a region insensitive to an incident light and existing in a top portion of a photoelectric conversion region of said photodetector forming the probe is removed.
Claim 28
Dependent Claim
101 words
An integrated SPM sensor, comprising: a probe constructed of a photodetector of a Schottky gate-type photo FET; a cantilever having said probe on a free end of the cantilever; a supporting base for supporting the cantilever on a fixed end of the cantilever; and signal lines for conducting a signal picked up by said probe; wherein a thickness of a region insensitive to an incident light and existing in a top portion of a photoelectric conversion region of said photodetector forming the probe is set to be equal to or less than approximately half an absorption length of the incident light.
Claim 29
Dependent Claim
101 words
An integrated SPM sensor, comprising: a probe constructed of a photodetector of a Schottky gate-type photo FET; a cantilever having said probe on a free end of the cantilever; a supporting base for supporting the cantilever on a fixed end of the cantilever; and signal lines for conducting a signal picked up by said probe; wherein a thickness of a region insensitive to an incident light and existing in a top portion of a photoelectric conversion region of said photodetector forming the probe is set to be equal to or less than approximately half an absorption length of the incident light.
Claim 30
Dependent Claim
97 words
An integrated SPM sensor, comprising: a probe constructed of a photodetector of an MOS type photodiode; a cantilever having said probe on a free end of the cantilever; a supporting base for supporting a fixed end of the cantilever; and signal lines for conducting a signal picked up by said probe; wherein a thickness of a region insensitive to an incident light and existing in a top portion of a photoelectric conversion region of said photodetector forming the probe is set to be equal to or less than approximately half an absorption length of the incident light.
Claim 31
Dependent Claim
97 words
An integrated SPM sensor, comprising: a probe constructed of a photodetector of an MOS type photodiode; a cantilever having said probe on a free end of the cantilever; a supporting base for supporting a fixed end of the cantilever; and signal lines for conducting a signal picked up by said probe; wherein a thickness of a region insensitive to an incident light and existing in a top portion of a photoelectric conversion region of said photodetector forming the probe is set to be equal to or less than approximately half an absorption length of the incident light.
Claim 32
Dependent Claim
97 words
An integrated SPM sensor, comprising: a probe constructed of a photodetector of a Schottky type photodiode; a cantilever having said probe on a free end of the cantilever; a supporting base for supporting a fixed end of the cantilever; and signal lines for conducting a signal picked up by said probe; wherein a thickness of a region insensitive to an incident light and existing in a top portion of a photoelectric conversion region of said photodetector forming the probe is set to be equal to or less than approximately half an absorption length of the incident light.
Claim 33
Dependent Claim
97 words
An integrated SPM sensor, comprising: a probe constructed of a photodetector of a Schottky type photodiode; a cantilever having said probe on a free end of the cantilever; a supporting base for supporting a fixed end of the cantilever; and signal lines for conducting a signal picked up by said probe; wherein a thickness of a region insensitive to an incident light and existing in a top portion of a photoelectric conversion region of said photodetector forming the probe is set to be equal to or less than approximately half an absorption length of the incident light.
Claim 34
Dependent Claim
87 words
An integrated SPM sensor, comprising: a probe constructed of a photodetector of a Schottky gate-type photo FET; a cantilever having said probe on a free end of the cantilever; a supporting base for supporting the cantilever on a fixed end of the cantilever; and signal lines for conducting a signal picked up by said probe; wherein a thickness of a photoelectric conversion region of said photodetector forming the probe is set to be equal to or greater than approximately twice an absorption length of the incident light.
Claim 35
Dependent Claim
87 words
An integrated SPM sensor, comprising: a probe constructed of a photodetector of a Schottky gate-type photo FET; a cantilever having said probe on a free end of the cantilever; a supporting base for supporting the cantilever on a fixed end of the cantilever; and signal lines for conducting a signal picked up by said probe; wherein a thickness of a photoelectric conversion region of said photodetector forming the probe is set to be equal to or greater than approximately twice an absorption length of the incident light.
Claim 36
Dependent Claim
83 words
An integrated SPM sensor, comprising: a probe constructed of a photodetector of an MOS type photodiode; a cantilever having said probe on a free end of the cantilever; a supporting base for supporting a fixed end of the cantilever; and signal lines for conducting a signal picked up by said probe; wherein a thickness of a photoelectric conversion region of said photodetector forming the probe is set to be equal to or greater than approximately twice an absorption length of the incident light.
Claim 37
Dependent Claim
83 words
An integrated SPM sensor, comprising: a probe constructed of a photodetector of an MOS type photodiode; a cantilever having said probe on a free end of the cantilever; a supporting base for supporting a fixed end of the cantilever; and signal lines for conducting a signal picked up by said probe; wherein a thickness of a photoelectric conversion region of said photodetector forming the probe is set to be equal to or greater than approximately twice an absorption length of the incident light.
Claim 38
Dependent Claim
83 words
An integrated SPM sensor, comprising: a probe constructed of a photodetector of a Schottky type photodiode; a cantilever having said probe on a free end of the cantilever; a supporting base for supporting a fixed end of the cantilever; and signal lines for conducting a signal picked up by said probe, wherein a thickness of a photoelectric conversion region of said photodetector forming the probe is set to be equal to or greater than approximately twice an absorption length of the incident light.
Claim 39
Dependent Claim
83 words
An integrated SPM sensor, comprising: a probe constructed of a photodetector of a Schottky type photodiode; a cantilever having said probe on a free end of the cantilever; a supporting base for supporting a fixed end of the cantilever; and signal lines for conducting a signal picked up by said probe, wherein a thickness of a photoelectric conversion region of said photodetector forming the probe is set to be equal to or greater than approximately twice an absorption length of the incident light.
Claim 40
Dependent Claim
86 words
An integrated SPM sensor, comprising: a probe constructed of a photodetector of a Schottky gate-type photo FET; a cantilever having said probe on a free end of the cantilever; a supporting base for supporting the cantilever on a fixed end of the cantilever; and signal lines for conducting a signal picked up by said probe; wherein a tip portion of a region insensitive to an incident light and existing in a top portion of a photoelectric conversion region of said photodetector forming the probe is removed.
Claim 41
Dependent Claim
86 words
An integrated SPM sensor, comprising: a probe constructed of a photodetector of a Schottky gate-type photo FET; a cantilever having said probe on a free end of the cantilever; a supporting base for supporting the cantilever on a fixed end of the cantilever; and signal lines for conducting a signal picked up by said probe; wherein a tip portion of a region insensitive to an incident light and existing in a top portion of a photoelectric conversion region of said photodetector forming the probe is removed.
Claim 42
Dependent Claim
82 words
An integrated SPM sensor, comprising: a probe constructed of a photodetector of an MOS type photodiode; a cantilever having said probe on a free end of the cantilever; a supporting base for supporting a fixed end of the cantilever; and signal lines for conducting a signal picked up by said probe, wherein a tip portion of a region insensitive to an incident light and existing in a top portion of a photoelectric conversion region of said photodetector forming the probe is removed.
Claim 43
Dependent Claim
82 words
An integrated SPM sensor, comprising: a probe constructed of a photodetector of an MOS type photodiode; a cantilever having said probe on a free end of the cantilever; a supporting base for supporting a fixed end of the cantilever; and signal lines for conducting a signal picked up by said probe, wherein a tip portion of a region insensitive to an incident light and existing in a top portion of a photoelectric conversion region of said photodetector forming the probe is removed.
Claim 44
Dependent Claim
82 words
An integrated SPM sensor, comprising: a probe constructed of a photodetector of a Schottky type photodiode; a cantilever having said probe on a free end of the cantilever; a supporting base for supporting a fixed end of the cantilever; and signal lines for conducting a signal picked up by said probe, wherein a tip portion of a region insensitive to an incident light and existing in a top portion of a photoelectric conversion region of said photodetector forming the probe is removed.
Claim 45
Dependent Claim
82 words
An integrated SPM sensor, comprising: a probe constructed of a photodetector of a Schottky type photodiode; a cantilever having said probe on a free end of the cantilever; a supporting base for supporting a fixed end of the cantilever; and signal lines for conducting a signal picked up by said probe, wherein a tip portion of a region insensitive to an incident light and existing in a top portion of a photoelectric conversion region of said photodetector forming the probe is removed.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-07-12 | 2003-01-11 | 2003-07-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-07-12 | 2007-01-11 | 2007-07-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-07-12 | 2011-01-11 | 2011-07-13 | $7700.00 | Window Closed / Lapsed |