Abstract The illumination method and apparatus used to form micro patterns, which can determine an ellipticity exhibiting optimum contrast gap and contrast by deriving a polarization distribution function by use of equations induced in accordance with the vector image theory and deriving S and P-polarized components (S com and P com ) (these components are perpendicular to and parallel to a meridional plane, respectively) of polarized light having x and y-directional components entering an illumination mask, thereby, preventing a contrast difference resulting from a contrast gap generated in the conventional linear polarization method, namely, an inconsistency between the longitudinal direction of the pattern and the polarization direction. Accordingly, it is possible to easily use appropriately elliptically polarized light, thereby being capable of achieving a reduction in contrast gap while achieving an improvement in contrast. The illumination method and apparatus can easily form micro patterns in the fabrication of semiconductor devices, thereby achieving a high integration of semiconductor devices. It is also possible to increase the process margin, thereby improving yield and reliability.
An illumination method for forming a pattern on a wafer by irradiating an image onto the wafer using a light source, the method comprising: providing an elliptically-polarized light as the light source; adjusting an angle of polarization of the elliptically-polarized light which determines a contrast; and adjusting a ratio of ellipticity of the elliptically-polarized light which determines a contrast gap; so as to optimize the contrast and the contrast gap of the image that is irradiated onto the wafer.
Claim 2
Dependent Claim
79 words
An illumination method for forming a pattern on a wafer by irradiating an image onto the wafer using a light source, the method comprising: providing an elliptically-polarized light as the light source; adjusting an angle of polarization of the elliptically-polarized light which determines a contrast; and adjusting a ratio of ellipticity of the elliptically-polarized light which determines a contrast gap; so as to optimize the contrast and the contrast gap of the image that is irradiated onto the wafer.
Claim 3
Dependent Claim
114 words
The method of claim 1, wherein the angle of polarization and the ratio of elipticity of the elliptically-polarized light are calculated by: ##EQU11## wherein: ψ x (f,g), ψ y (f,g) and ψ z (f,g) are respective x, y and z components of a polarization distribution function ψ(f,g) of light incident on a mask; f and g are spatial frequency components; λ is a wavelength; ##EQU12## S com and P com are respective S-polarized and P-polarized components that are respectively perpendicular to and parallel to a meridional plane; E ox and E oy represent respective amplitudes in x and y directions; and δ x and δ y represent respective phases in x and y directions.