Patent US5915200A successfully refreshed from Google Patents.
US5915200A
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US
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Film forming method and semiconductor device manufacturing method
Assignee: Semiconductor Process Laboratory Co Ltd
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Filing: 1997-04-24
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Granted: 1999-06-22
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Expires: 2017-04-24
Abstract
Abstract A film forming method is provided for forming a planarized interlayer insulating film for covering interconnection layers, etc. of a semiconductor integrated circuit device. While supplying a reaction gas including a phosphorus containing compound which has III valence phosphorus and at least one bond of phosphorus to oxygen, a silicon containing insulating film including P 2 O 3 is formed on a deposition substrate, thereby greatly reducing fluidization temperature for planarization.
Inventors
- 👤 Noboru Tokumasu
- 👤 Kazuo Maeda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:37
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6928; H10P14/6929; H10P95/00; H10P95/90; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10P14/6924
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
50 words
A film forming method comprising the steps of: supplying a reaction gas including a phosphorus-containing compound which has III valence phosphorus within a Si--O--P structure; and contacting said reaction gas with a deposition substrate to form a silicon containing insulating film including P 2 O 3 on the deposition substrate.
Claim 2
Dependent Claim
50 words
A film forming method comprising the steps of: supplying a reaction gas including a phosphorus-containing compound which has III valence phosphorus within a Si--O--P structure; and contacting said reaction gas with a deposition substrate to form a silicon containing insulating film including P 2 O 3 on the deposition substrate.
Claim 3
Dependent Claim
33 words
A film forming method according to claim 1, wherein said phosphorus containing compound is phosphorous acid dimethyl trimethyisilylester having the following formula: ##STR8## or phosphorous acid dimethoxy trimethyisilylester having the following formula: ##STR9##
Claim 4
Dependent Claim
22 words
A film forming method according to claim 1, wherein said reaction gas is excited by heating or by conversion into a plasma.
Claim 5
Dependent Claim
23 words
A film forming method according to claim 1, further comprising heating said deposition substrate at 400° C. or lower during said contacting step.
Claim 6
Dependent Claim
29 words
A film forming method according to claim 1, wherein said silicon containing insulating film including P 2 O 3 is a phosphosilicate glass film or a boronphosphosilicate glass film.
Claim 7
Dependent Claim
47 words
A film forming method according to claim 1, further comprising the step of: after said silicon containing insulating film including P 2 O 3 is formed, heating said silicon containing insulating film to become fluid such that a surface of said silicon containing insulating film is planarized.
Claim 8
Dependent Claim
24 words
A film forming method according to claim 6, wherein said silicon containing insulating film is heated at a temperature of 700° C. or lower.
Claim 9
Dependent Claim
24 words
A film forming method according to claim 6, wherein said silicon containing insulating film is heated at a temperature of 500° C. or lower.
Claim 10
Dependent Claim
61 words
A film forming method according to claim 1, further comprising the step of: after said silicon containing insulating film including P 2 O 3 is formed, heating said silicon containing insulating film including P 2 O 3 in an oxygen-containing atmosphere so as to convert P 2 O 3 in said silicon containing insulating film into P 2 O 5 .
Claim 11
Dependent Claim
70 words
A film forming method according to claim 6, further comprising the step of: after said silicon containing insulating film including P 2 O 3 is heated to be fluidized and a surface thereof is planarized, heating said silicon containing insulating film including P 2 O 3 in an oxygen-containing atmosphere so as to convert P 2 O 3 in said silicon containing insulating film into P 2 O 5 .
Claim 12
Dependent Claim
63 words
A semiconductor device manufacturing method comprising the steps of: forming a interconnection layer on an insulating film supported on a substrate; supplying a reaction gas including a phosphorus-containing compound which has III valence phosphorus within a Si--O--P structure; and contacting said reaction gas with said interconnection layer to form a silicon containing insulating film including P 2 O 3 covering said interconnection layer.
Claim 13
Dependent Claim
63 words
A semiconductor device manufacturing method comprising the steps of: forming a interconnection layer on an insulating film supported on a substrate; supplying a reaction gas including a phosphorus-containing compound which has III valence phosphorus within a Si--O--P structure; and contacting said reaction gas with said interconnection layer to form a silicon containing insulating film including P 2 O 3 covering said interconnection layer.
Claim 14
Dependent Claim
32 words
A film forming method according to claim 11, wherein said phosphorus-containing compound is phosphorous acid dimethyl trimethyisilylester having the following formula: ##STR10## or phosphorous acid dimethoxy trimethyisilylester having the following formula: ##STR11##
Claim 15
Dependent Claim
22 words
A film forming method according to claim 11, further comprising heating said substrate at 400° C. or lower during said contacting step.
Claim 16
Dependent Claim
29 words
A film forming method according to claim 11, wherein said silicon containing insulating film including P 2 O 3 is a phosphosilicate glass film or a boronphosphosilicate glass film.
Claim 17
Dependent Claim
20 words
A semiconductor device manufacturing method according to claim 11, wherein said interconnection layer is formed of aluminum or aluminum alloy.
Claim 18
Dependent Claim
47 words
A film forming method according to claim 11, further comprising the step of: after said silicon containing insulating film including P 2 O 3 is formed, heating said silicon containing insulating film to become fluid such that a surface of said silicon containing insulating film is planarized.
Claim 19
Dependent Claim
24 words
A film forming method according to claim 16, wherein said silicon containing insulating film is heated at a temperature of 700° C. or lower.
Claim 20
Dependent Claim
24 words
A film forming method according to claim 16, wherein said silicon containing insulating film is heated at a temperature of 500° C. or lower.
Claim 21
Dependent Claim
61 words
A film forming method according to claim 11, further comprising the step of: after said silicon containing insulating film including P 2 O 3 is formed, heating said silicon containing insulating film including P 2 O 3 in an oxygen-containing atmosphere so as to convert P 2 O 3 in said silicon containing insulating film into P 2 O 5 .
Claim 22
Dependent Claim
70 words
A film forming method according to claim 16, further comprising the step of: after said silicon containing insulating film including P 2 O 3 is heated to become fluid and a surface thereof is planarized, heating said silicon containing insulating film including P 2 O 3 in an oxygen-containing atmosphere so as to convert P 2 O 3 in said silicon containing insulating film into P 2 O 5 .
References Cited (Backward Citations)
US4708884A
Cited
US5409743A
Cited
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