US5409743A
Expired / Lapsed
US
⏱️ 0.0 years remaining
PECVD process for forming BPSG with low flow temperature
Assignee: International Business Machines Corp
•
Filing: 1993-05-14
•
Granted: 1995-04-25
•
Expires: 2013-05-14
Abstract
Abstract A method of forming a BPSG film in a PECVD reactor with ratios of P 2 O 3 /P 2 O 5 such that the film flows at low temperature in a non-oxidizing ambient and produces a reduced number of particulates. The method permits tailoring of the wall angle of a BPSG film by controlling the P 2 O 3 /P 2 O 5 ratio.
Inventors
- 👤 Mark D. Bouffard
- 👤 William J. King
- 👤 Cheryl M. Martin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:37
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/56; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
102 words
A method of forming a borophosphosilicate glass film, comprising the steps of providing gaseous boron, phosphorous, silicon, and oxygen-containing reactants in a chamber; controlling pressure and flow rates of said reactants and deposition temperature and depositing P 2 O 3 and P 2 O 5 in the film; controlling said depositing step to achieve a ratio of P 2 O 3 to P 2 O 5 , said ratio a number selected from 2% to 25% by weight; annealing in a non-oxidizing environment at an annealing temperature, said anneal resulting in a wall angle; wherein said selected ratio determines said wall angle.
Claim 2
Independent Claim
102 words
A method of forming a borophosphosilicate glass film, comprising the steps of providing gaseous boron, phosphorous, silicon, and oxygen-containing reactants in a chamber; controlling pressure and flow rates of said reactants and deposition temperature and depositing P 2 O 3 and P 2 O 5 in the film; controlling said depositing step to achieve a ratio of P 2 O 3 to P 2 O 5 , said ratio a number selected from 2% to 25% by weight; annealing in a non-oxidizing environment at an annealing temperature, said anneal resulting in a wall angle; wherein said selected ratio determines said wall angle.
Claim 3
Dependent Claim
26 words
A method as recited in claim 1, further comprising, after said providing step, the step of forming a plasma comprising at least one of said reactants.
Claim 4
Dependent Claim
16 words
A method as recited in claim 1, wherein said selected ratio is from 2% to 10%.
Claim 5
Dependent Claim
23 words
A method as recited in claim 1, Wherein said reactants include at least one from the group silane, nitrous oxide, phosphene, and diborane.
Claim 6
Dependent Claim
51 words
A method as recited in claim 1, further comprising, after said providing step, the step of forming a plasma comprising at least one of said reactants, wherein said selected ratio is 2% to 10%, and wherein said reactants include at least one from the group silane, nitrous oxide, phosphene, and diborane.
Claim 7
Dependent Claim
18 words
A method as recited in claim 1, wherein said deposition temperature is about 250° C. to 500° C.
Claim 8
Dependent Claim
17 words
A method as recited in claim 1, wherein said pressure is about 2.0 torr to 2.8 torr.
Claim 9
Dependent Claim
20 words
A method as recited in claim 4, wherein the flow rate of undiluted silane is about 20 to 500 ccpm.
Claim 10
Dependent Claim
21 words
A method as recited in claim 4, wherein the flow rate of nitrous oxide is about 3 lpm to 10 lpm.
Claim 11
Independent Claim
128 words
A method of forming a borophosphosilicate glass film, comprising the steps of: providing gaseous boron, phosphorous, silicon, and oxygen-containing reactants in a chamber; controlling pressure and flow rates of said reactants and deposition temperature and depositing P 2 O 3 and P 2 O 5 in the film; controlling said depositing step to achieve a P 2 O 3 to P 2 O 5 ratio selected to be at least 2% by weight; providing a first annealing step in a non-oxidizing environment wherein said selected ratio is sufficiently high so said first annealing step anneals the film without substantially altering wall angle; forming a pattern with openings in the film; and providing a second annealing step in an oxidizing environment so as to substantially reduce said wall angle.
Claim 12
Independent Claim
128 words
A method of forming a borophosphosilicate glass film, comprising the steps of: providing gaseous boron, phosphorous, silicon, and oxygen-containing reactants in a chamber; controlling pressure and flow rates of said reactants and deposition temperature and depositing P 2 O 3 and P 2 O 5 in the film; controlling said depositing step to achieve a P 2 O 3 to P 2 O 5 ratio selected to be at least 2% by weight; providing a first annealing step in a non-oxidizing environment wherein said selected ratio is sufficiently high so said first annealing step anneals the film without substantially altering wall angle; forming a pattern with openings in the film; and providing a second annealing step in an oxidizing environment so as to substantially reduce said wall angle.
Claim 13
Dependent Claim
26 words
A method as recited in claim 10, further comprising, after said providing step, the step of forming a plasma comprising at least one of said reactants.
Claim 14
Dependent Claim
23 words
A method as recited in claim 10, wherein said forming step comprises photolithography and reactive ion etching and said openings are contact openings.
Claim 15
Dependent Claim
15 words
A method as recited in claim 10, wherein said selected ratio is at least 10%.
Claim 16
Dependent Claim
23 words
A method as recited in claim 10, wherein said reactants include at least one from the group silane, nitrous oxide, phosphene, and diborane.
Claim 17
Dependent Claim
68 words
A method as recited in claim 10, further comprising, after said providing step, the step of forming a plasma comprising at least one of said reactants, wherein said forming step comprises photolithography and reactive ion etching and said openings are contact openings, and wherein said selected ratio is at least 10%, and wherein said reactants include at least one from the group silane, nitrous oxide, phosphene, and diborane.
Claim 18
Dependent Claim
18 words
A method as recited in claim 10, wherein said deposition temperature is about 250° C. to 500° C.
Claim 19
Dependent Claim
17 words
A method as recited in claim 10, wherein said pressure is about 2.0 torr to 2.8 torr.
Claim 20
Dependent Claim
20 words
A method as recited in claim 14, wherein the flow rate of undiluted silane is about 20 to 500 ccpm.
Claim 21
Dependent Claim
21 words
A method as recited in claim 14, wherein the flow rate of nitrous oxide is about 3 lpm to 10 lpm.
References Cited (Backward Citations)
US4420503A
Cited
US4708884A
Cited
US4546016A
Cited
US4791005A
Cited
US4892753A
Cited
US5180692A
Cited
US5104482A
Cited
US5262356A
Cited
US5124278A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-04-24 | 1998-10-24 | 1999-04-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-04-24 | 2002-10-24 | 2003-04-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-04-24 | 2006-10-24 | 2007-04-25 | $7700.00 | Window Closed / Lapsed |