Patent US5914894A successfully refreshed from Google Patents.
US5914894A
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Method for implementing a learning function
Assignee: California Institute of Technology
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Filing: 1998-06-01
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Granted: 1999-06-22
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Expires: 2018-06-01
Abstract
Abstract A three-terminal silicon MOS transistor with a time-varying transfer function is provided which may operate both as a single transistor analog learning device and as a single transistor non-volatile analog memory. The time-varying transfer function is achieved by adding or removing electrons from the fully insulated floating gate of an N-type MOS floating gate transistor. The transistor has a control gate capacitively coupled to the floating gate; it is from the perspective of this control gate that the transfer function of the transistor is modified. Electrons are removed from the floating gate via Fowler-Nordheim tunneling. Electrons are added to the floating gate via hot-electron injection.
Inventors
- 👤 Christopher J. Diorio
- 👤 Paul E. Hasler
- 👤 Bradley A. Minch
- 👤 Carver A. Mead
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:13
CPC Classifications
G; G11; G11C; G11C27/00; G11C27/005; H; H10; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10D30/684; H10D30/685
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
82 words
A method for implementing a learning function comprising the steps of: applying a voltage to a first terminal; applying a non-negative voltage to a second terminal; accepting an input signal at a third terminal; altering a stored charge value by capacitively coupling said input signal to said stored charge value; initiating electron injection, said electron injection further altering said stored charge value; generating an output signal having a value dependent on the product of said stored charge value and said input signal.
Claim 2
Independent Claim
82 words
A method for implementing a learning function comprising the steps of: applying a voltage to a first terminal; applying a non-negative voltage to a second terminal; accepting an input signal at a third terminal; altering a stored charge value by capacitively coupling said input signal to said stored charge value; initiating electron injection, said electron injection further altering said stored charge value; generating an output signal having a value dependent on the product of said stored charge value and said input signal.
Claim 3
Dependent Claim
24 words
The method for implementing a learning function according to claim 1 wherein said output signal is generated in the form of an electrical current.
Claim 4
Dependent Claim
24 words
The method for implementing a learning function according to claim 1 wherein said output signal is generated in the form of an electrical conductance.
Claim 5
Dependent Claim
27 words
The method for implementing a learning function according to claim 1 wherein said electron injection is controlled by altering said non-negative voltage applied to a second terminal.
Claim 6
Independent Claim
82 words
A method for implementing a learning function comprising the steps of: applying a voltage to a first terminal; applying a non-negative voltage to a second terminal; accepting an input signal at a third terminal; altering a stored charge value by capacitively coupling said input signal to said stored charge value; initiating electron tunneling, said electron tunneling further altering said stored charge value; generating an output signal having a value dependent on the product of said stored charge value and said input signal.
Claim 7
Independent Claim
82 words
A method for implementing a learning function comprising the steps of: applying a voltage to a first terminal; applying a non-negative voltage to a second terminal; accepting an input signal at a third terminal; altering a stored charge value by capacitively coupling said input signal to said stored charge value; initiating electron tunneling, said electron tunneling further altering said stored charge value; generating an output signal having a value dependent on the product of said stored charge value and said input signal.
Claim 8
Dependent Claim
24 words
The method for implementing a learning function according to claim 5 wherein said output signal is generated in the form of an electrical current.
Claim 9
Dependent Claim
24 words
The method for implementing a learning function according to claim 5 wherein said output signal is generated in the form of an electrical conductance.
Claim 10
Dependent Claim
27 words
The method for implementing a learning function according to claim 5 wherein said electron tunneling is controlled by altering said non-negative voltage applied to a second terminal.
Claim 11
Independent Claim
89 words
A method for implementing a learning function comprising the steps of: applying a voltage to a first terminal; applying a non-negative voltage to a second terminal; accepting an input signal at a third terminal; altering a stored charge value by capacitively coupling said input signal to said stored charge value; initiating electron tunneling and electron injection, said electron tunneling and said electron injection further altering said stored charge value; generating an output signal having a value dependent on the product of said stored charge value and said input signal.
Claim 12
Independent Claim
89 words
A method for implementing a learning function comprising the steps of: applying a voltage to a first terminal; applying a non-negative voltage to a second terminal; accepting an input signal at a third terminal; altering a stored charge value by capacitively coupling said input signal to said stored charge value; initiating electron tunneling and electron injection, said electron tunneling and said electron injection further altering said stored charge value; generating an output signal having a value dependent on the product of said stored charge value and said input signal.
Claim 13
Dependent Claim
24 words
The method for implementing a learning function according to claim 9 wherein said output signal is generated in the form of an electrical current.
Claim 14
Dependent Claim
24 words
The method for implementing a learning function according to claim 9 wherein said output signal is generated in the form of an electrical conductance.
Claim 15
Dependent Claim
30 words
The method for implementing a learning function according to claim 9 wherein said electron tunneling and electron injection is controlled by altering said non-negative voltage applied to a second terminal.
Claim 16
Independent Claim
83 words
A method for implementing a memory update function comprising the steps of: applying a voltage to a first terminal; applying a non-negative voltage to a second terminal; accepting an input signal at a third terminal; altering a stored charge value by capacitively coupling said input signal to said stored charge value; initiating electron injection, said electron injection further altering said stored charge value; generating an output signal having a value dependent on the product of said stored charge value and said input signal.
Claim 17
Independent Claim
83 words
A method for implementing a memory update function comprising the steps of: applying a voltage to a first terminal; applying a non-negative voltage to a second terminal; accepting an input signal at a third terminal; altering a stored charge value by capacitively coupling said input signal to said stored charge value; initiating electron injection, said electron injection further altering said stored charge value; generating an output signal having a value dependent on the product of said stored charge value and said input signal.
Claim 18
Dependent Claim
25 words
The method for implementing a memory update function according to claim 13 wherein said output signal is generated in the form of an electrical current.
Claim 19
Dependent Claim
25 words
The method for implementing a memory update function according to claim 13 wherein said output signal is generated in the form of an electrical conductance.
Claim 20
Dependent Claim
28 words
The method for implementing a memory update function according to claim 13 wherein said electron injection is controlled by altering said non-negative voltage applied to a second terminal.
Claim 21
Independent Claim
83 words
A method for implementing a memory update function comprising the steps of: applying a voltage to a first terminal; applying a non-negative voltage to a second terminal; accepting an input signal at a third terminal; altering a stored charge value by capacitively coupling said input signal to said stored charge value; initiating electron tunneling, said electron tunneling further altering said stored charge value; generating an output signal having a value dependent on the product of said stored charge value and said input signal.
Claim 22
Independent Claim
83 words
A method for implementing a memory update function comprising the steps of: applying a voltage to a first terminal; applying a non-negative voltage to a second terminal; accepting an input signal at a third terminal; altering a stored charge value by capacitively coupling said input signal to said stored charge value; initiating electron tunneling, said electron tunneling further altering said stored charge value; generating an output signal having a value dependent on the product of said stored charge value and said input signal.
Claim 23
Dependent Claim
25 words
The method for implementing a memory update function according to claim 17 wherein said output signal is generated in the form of an electrical current.
Claim 24
Dependent Claim
25 words
The method for implementing a memory update function according to claim 17 wherein said output signal is generated in the form of an electrical conductance.
Claim 25
Dependent Claim
28 words
The method for implementing a memory update function according to claim 17 wherein said electron tunneling is controlled by altering said non-negative voltage applied to a second terminal.
Claim 26
Independent Claim
90 words
A method for implementing a memory update function comprising the steps of: applying a voltage to a first terminal; applying a non-negative voltage to a second terminal; accepting an input signal at a third terminal; altering a stored charge value by capacitively coupling said input signal to said stored charge value; initiating electron tunneling and electron injection, said electron tunneling and said electron injection further altering said stored charge value; generating an output signal having a value dependent on the product of said stored charge value and said input signal.
Claim 27
Independent Claim
90 words
A method for implementing a memory update function comprising the steps of: applying a voltage to a first terminal; applying a non-negative voltage to a second terminal; accepting an input signal at a third terminal; altering a stored charge value by capacitively coupling said input signal to said stored charge value; initiating electron tunneling and electron injection, said electron tunneling and said electron injection further altering said stored charge value; generating an output signal having a value dependent on the product of said stored charge value and said input signal.
Claim 28
Dependent Claim
25 words
The method for implementing a memory update function according to claim 21 wherein said output signal is generated in the form of an electrical current.
Claim 29
Dependent Claim
25 words
The method for implementing a memory update function according to claim 21 wherein said output signal is generated in the form of an electrical conductance.
Claim 30
Dependent Claim
31 words
The method for implementing a memory update function according to claim 21 wherein said electron tunneling and electron tunneling is controlled by altering said non-negative voltage applied to a second terminal.
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