Patent US5914494A successfully refreshed from Google Patents.
US5914494A
Expired / Lapsed
US
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Arc chamber for an ion implantation system
Assignee: Thermoceramix Inc USA
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Filing: 1998-01-05
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Granted: 1999-06-22
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Expires: 2018-01-05
Abstract
Abstract The present invention relates to the fabrication of materials and structures having selected mechanical, thermal and electrical properties. More particularly, the invention relates to the use of these materials and structures in ion implantation systems. Structures comprising boron material provide components for use in implanters including arc chambers with which a beam of ions is generated for implantation into a target such as a semiconductor wafer.
Inventors
- 👤 Richard C. Abbott
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 05:25
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/30; H01J37/317; H01J37/3171; H01J27/00; H01J27/02; H01J27/04; H01J27/16; H01J27/20; H01J27/22; H01J37/02; H01J37/04; H01J37/08
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
122 words
An ion implantation system comprising: a gaseous boron source attached to an arc chamber of a Bernas ion source, the gaseous boron source providing boron ions within the arc chamber; a magnetic field source; an implant chamber in which an implantation target is positioned; a scanning system that controls relative movement between the implantation target and a beam of the ions; the arc chamber including a boron housing element having an aperture such that the beam of ions is directed through the aperture to the implant chamber, a cathode within the boron housing element that provides electrons, the boron housing element comprising a boron material with a density in a range between 80% and 100% of a maximum density of pure boron.
Claim 2
Dependent Claim
122 words
An ion implantation system comprising: a gaseous boron source attached to an arc chamber of a Bernas ion source, the gaseous boron source providing boron ions within the arc chamber; a magnetic field source; an implant chamber in which an implantation target is positioned; a scanning system that controls relative movement between the implantation target and a beam of the ions; the arc chamber including a boron housing element having an aperture such that the beam of ions is directed through the aperture to the implant chamber, a cathode within the boron housing element that provides electrons, the boron housing element comprising a boron material with a density in a range between 80% and 100% of a maximum density of pure boron.
Claim 3
Dependent Claim
23 words
The system of claim 1 wherein the boron housing element further comprises a rectangular arc chamber in which the ion source is positioned.
Claim 4
Dependent Claim
11 words
The system of claim 1 wherein the ion source comprises boron.
Claim 5
Dependent Claim
10 words
The system of claim 1 further comprising a vacuum port.
Claim 6
Dependent Claim
15 words
The system of claim 1 wherein the arc chamber further comprises a fluid inlet port.
Claim 7
Dependent Claim
14 words
The system of claim 1 further comprising a magnet attached to the arc chamber.
Claim 8
Independent Claim
81 words
A method of implanting ions comprising the steps of: providing a Bernas ion source to introduce a gaseous boron material into a boron arc chamber, the boron arc chamber comprising a boron material with a density in a range between 80% and 100% of a maximum density of pure boron; generating a beam of ions within the boron arc chamber; directing the beam of ions along a beam path with an electric field; and implanting the beam ions into a target.
Claim 9
Independent Claim
81 words
A method of implanting ions comprising the steps of: providing a Bernas ion source to introduce a gaseous boron material into a boron arc chamber, the boron arc chamber comprising a boron material with a density in a range between 80% and 100% of a maximum density of pure boron; generating a beam of ions within the boron arc chamber; directing the beam of ions along a beam path with an electric field; and implanting the beam ions into a target.
Claim 10
Dependent Claim
19 words
The method of claim 7 further comprising directing ions along the beam path through an aperture in the chamber.
Claim 11
Dependent Claim
17 words
The method of claim 7 further comprising scanning the beam relative to a surface of the target.
Claim 12
Dependent Claim
14 words
The method of claim 7 further comprising providing a target including a semiconductor wafer.
Claim 13
Dependent Claim
22 words
The method of claim 7 further comprising providing a boron material having an atomic percentage of elemental boron of at least 95%.
Claim 14
Dependent Claim
22 words
The method of claim 7 further comprising heating a boron electrode in the chamber to conduct a current through the boron electrode.
Claim 15
Dependent Claim
19 words
The method of claim 12 further comprising conducting a current of at least 1 amp through the boron material.
Claim 16
Dependent Claim
101 words
An ion implantation system comprising: a gaseous boron source that provides a source of boron ions; a magnetic field source; an implant chamber in which an implantation target is positioned; and a Bernas ion source including a boron anode arc chamber housing, a cathode to provide electrons, a port for entry of the gaseous boron material, and an aperture in the boron arc chamber housing through which boron ions are delivered to the implant chamber, the boron arc chamber housing comprising a boron material with a density in a range between 80% and 100% of a maximum density of pure boron.
Claim 17
Dependent Claim
101 words
An ion implantation system comprising: a gaseous boron source that provides a source of boron ions; a magnetic field source; an implant chamber in which an implantation target is positioned; and a Bernas ion source including a boron anode arc chamber housing, a cathode to provide electrons, a port for entry of the gaseous boron material, and an aperture in the boron arc chamber housing through which boron ions are delivered to the implant chamber, the boron arc chamber housing comprising a boron material with a density in a range between 80% and 100% of a maximum density of pure boron.
Claim 18
Dependent Claim
20 words
The system of claim 14 wherein the boron material comprises at least 95% of a maximum density of pure boron.
Claim 19
Dependent Claim
15 words
The system of claim 14 further comprising a target assembly that supports a semiconductor wafer.
Claim 20
Dependent Claim
16 words
The system of claim 14 wherein the boron material has a purity of at least 95%.
Claim 21
Dependent Claim
10 words
The system of claim 14 further comprising a beam trap.
Claim 22
Dependent Claim
11 words
The system of claim 14 wherein the boron material is amorphous.
Claim 23
Dependent Claim
14 words
The system of claim 14 wherein the boron material is attached to a substrate.
References Cited (Backward Citations)
US3960605A
Cited
US4383177A
Cited
US4385946A
Cited
US4658143A
Cited
US4822752A
Cited
US4980562A
Cited
US4670685A
Cited
US4751393A
Cited
US4857480A
Cited
US4851255A
Cited
US4946706A
Cited
US5086256A
Cited
US5089746A
Cited
US5136171A
Cited
US5134299A
Cited
US5262652A
Cited
US5162699A
Cited
US5373164A
Cited
US5308989A
Cited
US5354381A
Cited
US5354698A
Cited
US5432352A
Cited
US5420415A
Cited
US5640020A
Cited
US5563418A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-06-21 | 2002-12-21 | 2003-06-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-06-21 | 2006-12-21 | 2007-06-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-06-21 | 2010-12-21 | 2011-06-22 | $7700.00 | Window Closed / Lapsed |