US4851255A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ion implant using tetrafluoroborate
Assignee: Versum Materials US LLC
•
Filing: 1988-05-06
•
Granted: 1989-07-25
•
Expires: 2008-05-06
Abstract
Abstract Metal tetrafluoroborates, alkali and alkaline earth tetrafluoroborates in particular, and preferably lithium tetrafluoroborate are used as ion source materials in ion implantation of semiconductor materials with boron.
Inventors
- 👤 Andre Lagendijk
- 👤 Shantia Riahi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 05:42
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/21; H01; H01J; H01J27/00; H01J27/02; H01J27/022; H10P30/202; H10P30/204; H10P30/225
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
51 words
In the method of implanting boron into a substrate which comprises generating a beam of boron ions and directing said beam at the substrate under the influence of electrical and magnetic fields, the improvement wherein the step of generating a beam of boron ions comprises evaporating a charge of metal tetrahaloborate
Claim 2
Dependent Claim
51 words
In the method of implanting boron into a substrate which comprises generating a beam of boron ions and directing said beam at the substrate under the influence of electrical and magnetic fields, the improvement wherein the step of generating a beam of boron ions comprises evaporating a charge of metal tetrahaloborate
Claim 3
Dependent Claim
19 words
The method of claim 1 wherein the charge consists essentially of a Group I or Group II metal tetrahaloborate.
Claim 4
Dependent Claim
18 words
The method of claim 2 wherein the charge consists essentially of an alkali or alkaline earth metal tetrahaloborate.
Claim 5
Dependent Claim
18 words
The method of claim 3 wherein the charge consists essentially of an alkali or alkaline earth metal tetrafluoroborate.
Claim 6
Dependent Claim
20 words
The method of claim 4 wherein the charge consists essentially of lithium tetrafluoroborate, sodium tetrafluoroborate, calcium tetrafluoroborate or potassium tetrafluoroborate.
Claim 7
Dependent Claim
11 words
The method of claim 4 wherein the charge is lithium fluoborate.
Claim 8
Dependent Claim
19 words
The method of claim 6 wherein the tetrahaloborate consists essentially of a Group I or Group II metal tetrahaloborate.
Claim 9
Dependent Claim
18 words
The method of claim 7 wherein the tetrahaloborate consists essentially of an alkali or alkaline earth metal tetrafluoroborate.
Claim 10
Dependent Claim
20 words
The method of claim 8 wherein the tetrahaloborate consists essentially of lithium tetrafluoroborate, sodium tetrafluoroborate, calcium tetrafluoroborate or potassium tetrafluoroborate.
Claim 11
Dependent Claim
11 words
The method of claim 9 wherein the tetrahaloborate is lithium fluoborate.
Claim 12
Dependent Claim
133 words
In a method for implanting an element, in the form of ions thereof, into a target comprising the steps of evaporating a compound of said element, ionizing said compound to form ions of said element, accelerating the said ions, electromagnetically selecting the element ions to be implanted into such target, and accelerating and directing a beam of the selected ions to a predetermined location on such target, the improvement wherein the compound is a metal tetrahaloborate which evaporates under a vacuum of from approximately 10 -3 to 10 -5 torr in a temperature range of from approximately 100° C. to 400° C. at a rate sufficient to form an effective ion implant beam in an ion implant instrument, and wherein the compound ions are boron ions resulting from the ionization of the tetrahaloborate.
Claim 13
Dependent Claim
133 words
In a method for implanting an element, in the form of ions thereof, into a target comprising the steps of evaporating a compound of said element, ionizing said compound to form ions of said element, accelerating the said ions, electromagnetically selecting the element ions to be implanted into such target, and accelerating and directing a beam of the selected ions to a predetermined location on such target, the improvement wherein the compound is a metal tetrahaloborate which evaporates under a vacuum of from approximately 10 -3 to 10 -5 torr in a temperature range of from approximately 100° C. to 400° C. at a rate sufficient to form an effective ion implant beam in an ion implant instrument, and wherein the compound ions are boron ions resulting from the ionization of the tetrahaloborate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-07-24 | 1993-01-23 | 1993-07-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-07-24 | 1997-01-23 | 1997-07-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-07-24 | 2001-01-23 | 2001-07-25 | $7700.00 | Window Closed / Lapsed |