US5913715A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Use of hydrofluoric acid for effective pad conditioning
Assignee: Bell Semiconductor LLC
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Filing: 1997-08-27
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Granted: 1999-06-22
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Expires: 2017-08-27
Abstract
Abstract A process of conditioning a polishing pad used in chemical mechanical polishing of an integrated circuit and having a glazed layer is described. The process includes introducing a conditioning reagent including at least one of hydrofluoric acid, buffered oxide etch composition and potassium hydroxide on the polishing pad to dissolve at least a portion of the glazed layer; and abrading the glazed layer and disloding at least some particles from the glazed layer.
Inventors
- 👤 Eric J. Kirchner
- 👤 Jayashree Kalpathy-Cramer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 16:48
CPC Classifications
B; B24; B24B; B24B53/00; B24B53/017; B24B37/00; B24B37/04
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
93 words
A process of conditioning a polishing pad used in chemical mechanical polishing of an integrated circuit and having a glazed layer, said process comprising: introducing a conditioning reagent including at least one of hydrofluoric acid, buffered oxide etch composition and potassium hydroxide on said polishing pad to dissolve at least a portion of said glazed layer, said potassium hydroxide in sufficient amounts such that a pH of said conditioning reagent is between about 11.5 and about 1 2; and abrading said glazed layer and dislodging at least some particles from said glazed layer.
Claim 2
Dependent Claim
93 words
A process of conditioning a polishing pad used in chemical mechanical polishing of an integrated circuit and having a glazed layer, said process comprising: introducing a conditioning reagent including at least one of hydrofluoric acid, buffered oxide etch composition and potassium hydroxide on said polishing pad to dissolve at least a portion of said glazed layer, said potassium hydroxide in sufficient amounts such that a pH of said conditioning reagent is between about 11.5 and about 1 2; and abrading said glazed layer and dislodging at least some particles from said glazed layer.
Claim 3
Dependent Claim
23 words
The process of claim 1, further comprising flushing said polishing pad with sufficient amounts of deionized water to substantially remove the conditioning reagent.
Claim 4
Dependent Claim
17 words
The process of claim 2, further comprising introducing slurry on the polishing pad to commence chemical-mechanical polishing.
Claim 5
Dependent Claim
20 words
The process of claim 1, wherein the conditioning reagent in said step of introducing the conditioning reagent includes deionized water.
Claim 6
Dependent Claim
26 words
The process of claim 1, wherein a concentration of hydrofluoric acid in the conditioning reagent is between about 0.1% by volume and about 2% by volume.
Claim 7
Dependent Claim
26 words
The process of claim 1, the conditioning process is carried out for a period of time that is between about 20 seconds and about 1 minute.
Claim 8
Dependent Claim
23 words
The process of claim 6, wherein the conditioning process is carried out for a period of time that is between about 30 seconds.
Claim 9
Dependent Claim
23 words
The process of claim 1, wherein said abrading is performed by engaging said polishing pad with a conditioning arm having an abrasive portion.
Claim 10
Dependent Claim
25 words
The process of claim 8, wherein said introducing the conditioning reagent includes dispensing the conditioning reagent through at least one opening in the conditioning arm.
Claim 11
Dependent Claim
19 words
The process of claim 1, wherein said abrading is performed by engaging said polishing pad with an abrasive disk.
Claim 12
Dependent Claim
16 words
The process of claim 1, wherein said glazed layer includes silicon dioxide particles and slurry residue.
Claim 13
Dependent Claim
17 words
The process of claim 1, wherein said introducing the conditioning reagent and abrading are carried out simultaneously.
Claim 14
Dependent Claim
40 words
The process of claim 1, wherein said introducing the conditioning reagent includes providing the conditioning reagent on the polishing pad in a flow rate that is between about 50 and about 500 ml/minute for the duration of the conditioning process.
Claim 15
Dependent Claim
22 words
The process of claim 1, wherein said conditioning process is carried out after said integrated circuit has been subjected to chemical-mechanical polishing.
Claim 16
Dependent Claim
24 words
The process of claim 1, wherein said polishing pad is made from at least one of urethane, polyurethane, felt polymer and a filler material.
Claim 17
Dependent Claim
96 words
In a pad conditioning sub-assembly, a conditioning reagent for conditioning a polishing pad used in chemical-mechanical polishing of an integrated circuit, said conditioning reagent comprising: an effective amount of at least one of hydrofluoric acid, buffered oxide etch composition and potassium hydroxide to dissolve at least a portion of said glazed layer, said potassium hydroxide in sufficient amounts such that a pH of said conditioning reagent is between about 11.5 and about 12; and an effective amount of deionized water to dissolve at least some of the hydrofluoric acid, buffered oxide etch composition or potassium hydroxide.
Claim 18
Dependent Claim
96 words
In a pad conditioning sub-assembly, a conditioning reagent for conditioning a polishing pad used in chemical-mechanical polishing of an integrated circuit, said conditioning reagent comprising: an effective amount of at least one of hydrofluoric acid, buffered oxide etch composition and potassium hydroxide to dissolve at least a portion of said glazed layer, said potassium hydroxide in sufficient amounts such that a pH of said conditioning reagent is between about 11.5 and about 12; and an effective amount of deionized water to dissolve at least some of the hydrofluoric acid, buffered oxide etch composition or potassium hydroxide.
Claim 19
Dependent Claim
25 words
The pad conditioning sub-assembly of claim 16, wherein the effective amount of hydrofluoric acid is between about 0.1% by volume and about 2% by volume.
Claim 20
Dependent Claim
25 words
The pad conditioning sub-assembly of claim 17, wherein the effective amount of hydrofluoric acid is between about 0.1% by volume and about 1% by volume.
Claim 21
Dependent Claim
25 words
The pad conditioning sub-assembly of claim 16, wherein the effective amount of deionized water is between about 99% by volume and about 99.9% by volume.
Claim 22
Dependent Claim
27 words
The pad conditioning sub-assembly of claim 16, wherein the effective amount of buffered oxide etch composition is between about 0.1% by volume and about 2% by volume.
References Cited (Backward Citations)
US5081051A
Cited
US5245794A
Cited
US5216843A
Cited
US5486131A
Cited
US5664987A
Cited
US5547417A
Cited
US5536202A
Cited
US5584749A
Cited
US5709593A
Cited
US5645682A
Cited
US5725417A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-06-21 | 2002-12-21 | 2003-06-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-06-21 | 2006-12-21 | 2007-06-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-06-21 | 2010-12-21 | 2011-06-22 | $7700.00 | Window Closed / Lapsed |