Method for reduction of plasma charging damage during chemical vapor deposition

Claim 2

In a high density plasma processing chamber, a method of depositing an insulating layer on a substrate, said insulating layer being disposed above a first layer having trenches formed therein and below a subsequently deposited second layer, said method comprising: depositing a protection layer above said first layer using a first set of deposition parameters having a first J i , said protection layer coating a surface of said first layer in a substantially conformal manner without forming voids in said trenches; and depositing a fill layer above said protection layer using a second set of deposition parameters having a second J i , wherein said first set of deposition parameters is selected to reduce plasma charge-related damage relative to said second set of deposition parameters and said first J i is reduced relative to said second J i , said first J i being reduced relative to said second J i by increasing a pressure in a processing chamber during deposition of said protection layer relative to a pressure in a processing chamber during deposition of said fill layer, and wherein the combination of said protection layer and said fill layer sufficiently electrically isolates said first layer from said second layer.

Claim 3

The method of claim 1, wherein the pressure in the processing chamber during deposition of the protection layer is increased to between about 6 mtorr and about 10 mTorr.

Claim 4

The method of claim 1, wherein the thickness of the protection layer is about 20% of the total thickness of the insulating layer.

Claim 5

The method of claim 1, wherein the protection layer has a thickness of about 200 nm to about 300 nm.

Claim 6

In a high density plasma processing chamber, a method of depositing an insulating layer on a substrate, said insulating layer being disposed above a first layer having trenches formed therein and below a subsequently deposited second layer, said method comprising: depositing a protection layer above said first layer using a first set of deposition parameters having a first J i , said protection layer coating a surface of said first layer in a substantially conformal manner without forming voids in said trenches; depositing an intermediate layer above said protection layer using a third set of deposition parameters; and depositing a fill layer above said intermediate layer using a second set of deposition parameters having a second J i , wherein said first set of deposition parameters is selected to reduce plasma charge-related damage relative to said second set of deposition parameters and said first J i is reduced relative to said second J i , said first J i being reduced relative to said second J i by increasing a pressure in a processing chamber during deposition of said protection layer relative to a pressure in a processing chamber during deposition of said fill layer, wherein said third set of deposition parameters is selected to increase throughput relative to said first set of deposition parameters, and wherein the combination of said protection layer, said intermediate layer, and said fill layer sufficiently electrically isolates said first layer from said second layer.

Claim 7

In a high density plasma processing chamber, a method of depositing an insulating layer on a substrate, said insulating layer being disposed above a first layer having trenches formed therein and below a subsequently deposited second layer, said method comprising: depositing a protection layer above said first layer using a first set of deposition parameters having a first J i , said protection layer coating a surface of said first layer in a substantially conformal manner without forming voids in said trenches; depositing an intermediate layer above said protection layer using a third set of deposition parameters; and depositing a fill layer above said intermediate layer using a second set of deposition parameters having a second J i , wherein said first set of deposition parameters is selected to reduce plasma charge-related damage relative to said second set of deposition parameters and said first J i is reduced relative to said second J i , said first J i being reduced relative to said second J i by increasing a pressure in a processing chamber during deposition of said protection layer relative to a pressure in a processing chamber during deposition of said fill layer, wherein said third set of deposition parameters is selected to increase throughput relative to said first set of deposition parameters, and wherein the combination of said protection layer, said intermediate layer, and said fill layer sufficiently electrically isolates said first layer from said second layer.

Claim 8

The method of claim 5, wherein the pressure in the processing chamber during deposition of the protection layer is increased to between about 6 mTorr and about 10 mTorr.

Claim 9

The method of claim 5, wherein the combined thickness of the protection layer and the intermediate layer is about 20% of the total thickness of the insulating layer.

Claim 10

The method of claim 5, wherein the protection layer and the intermediate layer each have a thickness of about 10% of the total thickness of the insulating layer.