US5913102A
Expired / Lapsed
US
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Method for forming patterned photoresist layers with enhanced critical dimension uniformity
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1997-03-20
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Granted: 1999-06-15
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Expires: 2017-03-20
Abstract
Abstract A method for forming a patterned photoresist layer within an integrated circuit. The method employs a measurement parameter and a control parameter, which when at a measurement parameter target value and a control parameter target value provide a patterned photoresist layer with a target critical dimension. There is also determined a measurement parameter correlation coefficient and a control parameter correlation coefficient, each of which correlates with the patterned photoresist layer target critical dimension. When forming the patterned photoresist layer, the measurement parameter value is measured and variations of the measurement parameter from the measurement target value are compensated through varying the control parameter from the control target value while employing the measurement parameter correlation coefficient and the control parameter correlation coefficient. Through the method a patterned photoresist layer with controlled and enhanced critical dimension uniformity is formed.
Inventors
- 👤 Dah Jong Ou Yang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 07:58
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70483; G03F7/70605; G03F7/70616; G03F7/70625; H; H10; H10P; H10P14/00; H10P14/60; H10P14/61; H10P50/00; H10P50/73
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
252 words
A method for forming a patterned photoresist layer comprising: providing a method for forming upon a substrate layer a patterned photoresist layer from a blanket photoresist layer, the method having a capability for forming the patterned photoresist layer with a target critical dimension; identifying within the method for forming the patterned photoresist layer from the blanket photoresist layer a minimum of one measurement parameter and one control parameter, where the measurement parameter within the method is accessible prior to the control parameter within the method; establishing: (a) a measurement target value for the measurement parameter and a control target value for the control parameter such that when the measurement parameter is at the measurement target value and the control parameter is at the control target value the patterned photoresist layer is formed with the target critical dimension; and (b) a measurement parameter correlation coefficient correlating a variation of the measurement parameter with a variation of the target critical dimension and a control parameter correlation coefficient correlating a variation of the control parameter with the variation of the target critical dimension; employing the method for forming the patterned photoresist layer from the blanket photoresist layer while measuring the value of the measurement parameter; and compensating for a variation of the measurement parameter from the measurement target value by subsequently varying the control parameter from the control target value in accord with the measurement parameter correlation coefficient and the control parameter correlation coefficient to provide the patterned photoresist layer with the target critical dimension.
Claim 2
Independent Claim
252 words
A method for forming a patterned photoresist layer comprising: providing a method for forming upon a substrate layer a patterned photoresist layer from a blanket photoresist layer, the method having a capability for forming the patterned photoresist layer with a target critical dimension; identifying within the method for forming the patterned photoresist layer from the blanket photoresist layer a minimum of one measurement parameter and one control parameter, where the measurement parameter within the method is accessible prior to the control parameter within the method; establishing: (a) a measurement target value for the measurement parameter and a control target value for the control parameter such that when the measurement parameter is at the measurement target value and the control parameter is at the control target value the patterned photoresist layer is formed with the target critical dimension; and (b) a measurement parameter correlation coefficient correlating a variation of the measurement parameter with a variation of the target critical dimension and a control parameter correlation coefficient correlating a variation of the control parameter with the variation of the target critical dimension; employing the method for forming the patterned photoresist layer from the blanket photoresist layer while measuring the value of the measurement parameter; and compensating for a variation of the measurement parameter from the measurement target value by subsequently varying the control parameter from the control target value in accord with the measurement parameter correlation coefficient and the control parameter correlation coefficient to provide the patterned photoresist layer with the target critical dimension.
Claim 3
Dependent Claim
43 words
The method of claim 1 wherein: the substrate layer is chosen from the group of substrate layers consisting of insulator layers, conductor layers, semiconductor layers and photoactive layers; and the substrate layer has a thickness of from about 1000 to about 9000 angstroms.
Claim 4
Dependent Claim
75 words
The method of claim 1 wherein the measurement parameter is chosen from the group of measurement parameters consisting of the blanket photoresist layer thickness, a photoexposure energy employed in forming the patterned photoresist layer, a photoexposure dose employed in forming the patterned photoresist layer, a reflectivity of the substrate layer, a developer type employed in developing the patterned photoresist layer, a development condition employed in developing the patterned photoresist layer and the substrate layer thickness.
Claim 5
Dependent Claim
75 words
The method of claim 1 wherein the control parameter is chosen from the group of control parameters consisting of the blanket photoresist layer thickness, a photoexposure energy employed in forming the patterned photoresist layer, a photoexposure dose employed in forming the patterned photoresist layer, a reflectivity of the substrate layer, a developer type employed in developing the patterned photoresist layer, a development condition employed in developing the patterned photoresist layer and the substrate layer thickness.
Claim 6
Independent Claim
261 words
A method for forming a patterned photoresist layer upon a semi-transparent and semi-reflective substrate layer comprising: providing a method for forming upon a semi-transparent semi-reflective substrate layer a patterned photoresist layer from a blanket photoresist layer, the method having a capability for forming the patterned photoresist layer with a target critical dimension; identifying within the method for forming the patterned photoresist layer from the blanket photoresist layer a minimum of one measurement parameter and one control parameter, where the measurement parameter within the method is accessible prior to the control parameter within the method; establishing: (a) a measurement target value for the measurement parameter and a control target value for the control parameter such that when the measurement parameter is at the measurement target value and the control parameter is at the control target value the patterned photoresist layer is formed with the target critical dimension; and (b) a measurement parameter correlation coefficient correlating a variation of the measurement parameter with a variation of the target critical dimension and a control parameter correlation coefficient correlating a variation of the control parameter with the variation of the target critical dimension; employing the method for forming the patterned photoresist layer from the blanket photoresist layer while measuring the value of the measurement parameter; and compensating for a variation of the measurement parameter from the measurement target value by subsequently varying the control parameter from the control target value in accord with the measurement parameter correlation coefficient and the control parameter correlation coefficient to provide the patterned photoresist layer with the target critical dimension.
Claim 7
Independent Claim
261 words
A method for forming a patterned photoresist layer upon a semi-transparent and semi-reflective substrate layer comprising: providing a method for forming upon a semi-transparent semi-reflective substrate layer a patterned photoresist layer from a blanket photoresist layer, the method having a capability for forming the patterned photoresist layer with a target critical dimension; identifying within the method for forming the patterned photoresist layer from the blanket photoresist layer a minimum of one measurement parameter and one control parameter, where the measurement parameter within the method is accessible prior to the control parameter within the method; establishing: (a) a measurement target value for the measurement parameter and a control target value for the control parameter such that when the measurement parameter is at the measurement target value and the control parameter is at the control target value the patterned photoresist layer is formed with the target critical dimension; and (b) a measurement parameter correlation coefficient correlating a variation of the measurement parameter with a variation of the target critical dimension and a control parameter correlation coefficient correlating a variation of the control parameter with the variation of the target critical dimension; employing the method for forming the patterned photoresist layer from the blanket photoresist layer while measuring the value of the measurement parameter; and compensating for a variation of the measurement parameter from the measurement target value by subsequently varying the control parameter from the control target value in accord with the measurement parameter correlation coefficient and the control parameter correlation coefficient to provide the patterned photoresist layer with the target critical dimension.
Claim 8
Dependent Claim
75 words
The method of claim 5 wherein the measurement parameter is chosen from the group of measurement parameters consisting of the blanket photoresist layer thickness, a photoexposure energy employed in forming the patterned photoresist layer, a photoexposure dose employed in forming the patterned photoresist layer, a reflectivity of the substrate layer, a developer type employed in developing the patterned photoresist layer, a development condition employed in developing the patterned photoresist layer and the substrate layer thickness.
Claim 9
Dependent Claim
75 words
The method of claim 5 wherein the control parameter is chosen from the group of control parameters consisting of the blanket photoresist layer thickness, a photoexposure energy employed in forming the patterned photoresist layer, a photoexposure dose employed in forming the patterned photoresist layer, a reflectivity of the substrate layer, a developer type employed in developing the patterned photoresist layer, a development condition employed in developing the patterned photoresist layer and the substrate layer thickness.
Claim 10
Dependent Claim
37 words
The method of claim 5 wherein the measurement parameter is the semi-transparent and semi-reflective substrate layer thickness and the control parameter is a photoexposure energy employed in forming the patterned photoresist layer from the blanket photoresist layer.
Claim 11
Independent Claim
233 words
A method for forming a patterned photoresist layer upon a silicon nitride substrate layer comprising: providing a method for forming upon a silicon nitride substrate layer a patterned photoresist layer from a blanket photoresist layer, the method having a capability for forming the patterned photoresist layer with a target critical dimension, the method employing a silicon nitride substrate layer thickness as a measurement parameter and a photoexposure dose as a control parameter; establishing: (a) a silicon nitride substrate layer thickness target value and a photoexposure dose target value such that the patterned photoresist layer is formed with the target critical dimension; and (b) a silicon nitride substrate layer thickness correlation coefficient correlating a variation of the silicon nitride substrate layer thickness with a variation of the target critical dimension and a photoexposure dose correlation coefficient correlating a variation of the photoexposure dose with the variation of the target critical dimension; employing the method for forming the patterned photoresist layer from the blanket photoresist layer while measuring the silicon nitride substrate layer thickness; and compensating for a variation of the silicon nitride substrate layer thickness from the silicon nitride substrate layer thickness target value by subsequently varying the photoexposure dose from the photoexposure dose target value in accord with the silicon nitride substrate layer thickness correlation coefficient and the photoexposure dose correlation coefficient to provide the patterned photoresist layer with the target critical dimension.
Claim 12
Independent Claim
233 words
A method for forming a patterned photoresist layer upon a silicon nitride substrate layer comprising: providing a method for forming upon a silicon nitride substrate layer a patterned photoresist layer from a blanket photoresist layer, the method having a capability for forming the patterned photoresist layer with a target critical dimension, the method employing a silicon nitride substrate layer thickness as a measurement parameter and a photoexposure dose as a control parameter; establishing: (a) a silicon nitride substrate layer thickness target value and a photoexposure dose target value such that the patterned photoresist layer is formed with the target critical dimension; and (b) a silicon nitride substrate layer thickness correlation coefficient correlating a variation of the silicon nitride substrate layer thickness with a variation of the target critical dimension and a photoexposure dose correlation coefficient correlating a variation of the photoexposure dose with the variation of the target critical dimension; employing the method for forming the patterned photoresist layer from the blanket photoresist layer while measuring the silicon nitride substrate layer thickness; and compensating for a variation of the silicon nitride substrate layer thickness from the silicon nitride substrate layer thickness target value by subsequently varying the photoexposure dose from the photoexposure dose target value in accord with the silicon nitride substrate layer thickness correlation coefficient and the photoexposure dose correlation coefficient to provide the patterned photoresist layer with the target critical dimension.
Claim 13
Dependent Claim
20 words
The method of claim 8 wherein the silicon nitride substrate layer thickness is from about 1000 to about 2000 angstroms.
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