US4814244A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming resist pattern on substrate
Assignee: NEC Corp
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Filing: 1988-02-24
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Granted: 1989-03-21
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Expires: 2008-02-24
Abstract
Abstract A method of forming resist pattern is disclosed. After the resist pattern is formed, an ion beam is irradiated on the resist pattern. The energy of the ion beam is controlled in every segments of the resist pattern by a predicted deviation data stored beforehand, so that the unfavorable deviation of the resist pattern is minimized.
Inventors
- 👤 Toshio Koguchi
- 👤 Haruo Kinoshita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 22:27
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/20; G03F7/2022; G03F7/2024; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/949
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
97 words
A method of forming resist pattern on a substrate comprising steps of forming a layer to be selectively etched on one major surface of a substrate, coating the surface of said layer with a resist film, selectively exposing said resist film, developing said resist film to form a resist pattern, and irradiating an ion beam on said resist pattern, the energy of said ion beam being changed at every segment areas of said resist pattern on the basis of predicted deviation distribution data of the resist pattern so that the deviation of said resist pattern is minimized.
Claim 2
Independent Claim
97 words
A method of forming resist pattern on a substrate comprising steps of forming a layer to be selectively etched on one major surface of a substrate, coating the surface of said layer with a resist film, selectively exposing said resist film, developing said resist film to form a resist pattern, and irradiating an ion beam on said resist pattern, the energy of said ion beam being changed at every segment areas of said resist pattern on the basis of predicted deviation distribution data of the resist pattern so that the deviation of said resist pattern is minimized.
Claim 3
Dependent Claim
32 words
A method of claim 1, in which said predicted deviation distribution data is obtained by examination results for the deviations in a resist pattern caused by coating and developing said resist film.
Claim 4
Dependent Claim
34 words
A method of claim 1, in which said predicted deviation distribution data is obtained by examination results for the deviations in a resist pattern caused by coating, selectively exposing and developing said resist film.
Claim 5
Dependent Claim
21 words
A method of claim 3, in which said selectively exposing said resist film is conducted through an electron beam exposure method.
Claim 6
Dependent Claim
34 words
A method of claim 1, in which said layer is made of metal and/or metal oxide to form an opaque pattern of a mask, and said substrate is a glass substrate of said mask.
Claim 7
Dependent Claim
21 words
A method of claim 1, in which said layer is made of conductive material, and said substrate is a semiconductor wafer.
Claim 8
Dependent Claim
20 words
A method of claim 1, in which said layer includes an insulating layer, and said substrate is a semiconductor wafer.
Claim 9
Dependent Claim
18 words
A method of claim 1, in which said substrate is a membrane of a mask for X-ray lithography.
References Cited (Backward Citations)
US4341592A
Cited
EP0061350A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-03-20 | 1992-09-19 | 1993-03-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-03-20 | 1996-09-19 | 1997-03-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-03-20 | 2000-09-19 | 2001-03-21 | $7700.00 | Window Closed / Lapsed |