Patent US5906951A successfully refreshed from Google Patents.
US5906951A
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Strained Si/SiGe layers on insulator
Assignee: GlobalFoundries Inc
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Filing: 1997-04-30
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Granted: 1999-05-25
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Expires: 2017-04-30
Abstract
Abstract An SOI substrate and method for forming is described incorporating the steps of forming strained layers of Si and/or SiGe on a first substrate, forming a layer of Si and/or S i O 2 over the strained layers, bonding a second substrate having an insulating layer on its upper surface to the top surface above the strained layers, and removing the first substrate. The invention overcomes the problem of forming strained Si and SiGe layers on insulating substrates.
Inventors
- 👤 Jack Oon Chu
- 👤 Khalid EzzEldin Ismail
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 12:55
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/3254; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P90/1922; H10W; H10W10/00; H10W10/10; H10W10/181
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
145 words
A method for forming strained layers on an insulator comprising the steps of: selecting a first semiconductor substrate, forming a first epitaxial graded layer of Si 1-y Ge y over said first semiconductor substrate where Y at its upper surface is in the range from 0.2 to 0.5, forming a second relaxed layer of SiGe, forming a third p++ doped layer of SiGe, forming a fourth epitaxial strained layer selected from the group consisting of Si and SiGe, forming a fifth relaxed Si 1-X Ge X layer where X is in the range from 0.2 to 0.5, forming a sixth layer of Si, selecting a second substrate having an upper layer selected from the group consisting of Si and SiO 2 thereon, bonding the upper surface of said sixth layer and said second substrate together, removing said first substrate and said first and second layers.
Claim 2
Independent Claim
145 words
A method for forming strained layers on an insulator comprising the steps of: selecting a first semiconductor substrate, forming a first epitaxial graded layer of Si 1-y Ge y over said first semiconductor substrate where Y at its upper surface is in the range from 0.2 to 0.5, forming a second relaxed layer of SiGe, forming a third p++ doped layer of SiGe, forming a fourth epitaxial strained layer selected from the group consisting of Si and SiGe, forming a fifth relaxed Si 1-X Ge X layer where X is in the range from 0.2 to 0.5, forming a sixth layer of Si, selecting a second substrate having an upper layer selected from the group consisting of Si and SiO 2 thereon, bonding the upper surface of said sixth layer and said second substrate together, removing said first substrate and said first and second layers.
Claim 3
Dependent Claim
19 words
The method of claim 1 further including the step of removing at least a portion of said third layer.
Claim 4
Dependent Claim
39 words
The method of claim 2 wherein said step of removing at least a portion of said third layer includes oxidizing said third layer in wet O 2 at a temperature in the range from 650° C. to 750° C.
Claim 5
Dependent Claim
28 words
The method of claim 1 wherein said step of removing said first substrate and said first and second layers includes the step of etching with buffered hydrofluoric acid.
Claim 6
Dependent Claim
26 words
The method of claim 1 further including the step of forming a layer of SiO 2 on said sixth layer prior to said step of selecting.
Claim 7
Dependent Claim
30 words
The method of claim 1 further including the step of forming doped regions in said fifth and sixth layers by ion implantation after said step of forming said sixth layer.
Claim 8
Dependent Claim
38 words
The method of claim 1 after said step of forming a fourth epitaxial strained layer further including the step of forming a strained Si 1-Z Ge Z layer where Z is in the range from 0.5 to 0.8.
References Cited (Backward Citations)
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