Method for fabricating MOSFET having cobalt silicide film

Claim 1

A method for fabricating a MOSFET having cobalt silicide, the method comprising the steps of: providing a semiconductor substrate having exposed silicon portions on the surface thereof; sequentially depositing niobium and cobalt in the order named on the exposed silicon portions; and annealing the resultant substrate, to form a cobalt silicide film on the exposed silicon portions.

Claim 2

A method for fabricating a MOSFET having cobalt silicide, the method comprising the steps of: providing a semiconductor substrate having exposed silicon portions on the surface thereof; sequentially depositing niobium and cobalt in the order named on the exposed silicon portions; and annealing the resultant substrate, to form a cobalt silicide film on the exposed silicon portions.

Claim 14

A method for fabricating a MOSFET having cobalt silicide, the method comprising the steps of: providing a semiconductor substrate in which device isolation oxides are formed; forming a gate including a gate insulator interposed between the gate and the substrate; forming source and drain regions in the substrate at both sides of the gate in the substrate; forming spacers of insulator on both side walls of the gate; sequentially depositing niobium and cobalt in the order named on the entire surface of the resultant substrate; and annealing the resultant substrate at a selected temperature, to form a cobalt silicide film on the source, drain, and gate.

Claim 15

A method for fabricating a MOSFET having cobalt silicide, the method comprising the steps of: providing a semiconductor substrate in which device isolation oxides are formed; forming a gate including a gate insulator interposed between the gate and the substrate; forming source and drain regions in the substrate at both sides of the gate in the substrate; forming spacers of insulator on both side walls of the gate; sequentially depositing niobium and cobalt in the order named on the entire surface of the resultant substrate; and annealing the resultant substrate at a selected temperature, to form a cobalt silicide film on the source, drain, and gate.

Claim 25

A method for fabricating a MOSFET having cobalt silicide, the method comprising the steps of: providing a semiconductor substrate in which device isolation oxides are formed; sequentially depositing silicon oxide layer, polysilicon layer, amorphous silicon layer, and anti-reflectivelayer in the order named on the semiconductor substrate, and patterning the deposited four layers, to form a gate and a gate insulator interposed between the gate and the substrate wherein the two patterned layers of the amorphous silicon layer and the polysilicon layer correspond to the gate and the silicon oxide to the gate insulator; implanting an N-type impurity at a low concentration into the substrate including the gate, to form lightly doped regions in the semiconductor substrate at both sides of the gate; forming spacers of insulator on both side walls of the gate; removing the anti-reflective layer; implanting the N-type impurity into the substrate, at a concentration higher than that of the lightly doped regions to form source and drain regions, wherein each of the lightly doped regions is in contact with the source and drain regions and is disposed under the spacers; sequentially depositing niobium and cobalt on the resultant substrate having the source and drain regions; and annealing the substrate resulting from the depositing step at a selected temperature, to form a cobalt silicide film on the source, drain, and gate.

Claim 26

A method for fabricating a MOSFET having cobalt silicide, the method comprising the steps of: providing a semiconductor substrate in which device isolation oxides are formed; sequentially depositing silicon oxide layer, polysilicon layer, amorphous silicon layer, and anti-reflectivelayer in the order named on the semiconductor substrate, and patterning the deposited four layers, to form a gate and a gate insulator interposed between the gate and the substrate wherein the two patterned layers of the amorphous silicon layer and the polysilicon layer correspond to the gate and the silicon oxide to the gate insulator; implanting an N-type impurity at a low concentration into the substrate including the gate, to form lightly doped regions in the semiconductor substrate at both sides of the gate; forming spacers of insulator on both side walls of the gate; removing the anti-reflective layer; implanting the N-type impurity into the substrate, at a concentration higher than that of the lightly doped regions to form source and drain regions, wherein each of the lightly doped regions is in contact with the source and drain regions and is disposed under the spacers; sequentially depositing niobium and cobalt on the resultant substrate having the source and drain regions; and annealing the substrate resulting from the depositing step at a selected temperature, to form a cobalt silicide film on the source, drain, and gate.