US5899724A
Expired / Lapsed
US
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Method for fabricating a titanium resistor
Assignee: Infineon Technologies AG
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Filing: 1996-05-09
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Granted: 1999-05-04
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Expires: 2016-05-09
Abstract
Abstract According to the preferred embodiment of the present invention, an improved resistor and method of fabrication is provided. The method for fabricating a resistive element into an integrated circuit semiconductor device comprises the steps of: depositing a dielectric film, such as silicon nitride; depositing a titanium film upon the dielectric film; and annealing the titanium and dielectric films. This causes titanium to be diffused into the dielectric film. This creates a resistive element having a relatively high resistivity. The preferred embodiment method has the advantage of being easily integrated into conventional integrated circuit fabrication techniques.
Inventors
- 👤 David Mark Dobuzinsky
- 👤 Stephen Gerard Fugardi
- 👤 Erwin Hammerl
- 👤 Herbert Lei Ho
- 👤 Samuel C. Ramac
- 👤 Alvin Wayne Strong
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:42
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/47; H10D1/474
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
58 words
A method for fabricating a resistive element into an integrated circuit semiconductor device, the method comprising the steps of: a) depositing a nitride dielectric film; b) depositing a titanium including film upon said nitride dielectric film; and c) annealing said titanium including film and said nitride dielectric film such that titanium is diffused into said nitride dielectric film.
Claim 2
Independent Claim
58 words
A method for fabricating a resistive element into an integrated circuit semiconductor device, the method comprising the steps of: a) depositing a nitride dielectric film; b) depositing a titanium including film upon said nitride dielectric film; and c) annealing said titanium including film and said nitride dielectric film such that titanium is diffused into said nitride dielectric film.
Claim 3
Dependent Claim
16 words
The method of claim 1 wherein said nitride dielectric film comprises Si 3 N 4 .
Claim 4
Dependent Claim
19 words
The method of claim 1 wherein said nitride dielectric film has a resistive dimension of less than 8 nanometers.
Claim 5
Dependent Claim
19 words
The method of claim 1 wherein said nitride dielectric film has a resistive dimension of less than 120 nanometers.
Claim 6
Dependent Claim
18 words
The method of claim 1 wherein said titanium including film has a thickness of 5 to 40 nm.
Claim 7
Dependent Claim
13 words
The method of claim 1 wherein said titanium including film additionally includes nitrogen.
Claim 8
Dependent Claim
20 words
The method of claim 1 wherein said titanium including film comprises a titanium portion and a titanium nitride cap portion.
Claim 9
Dependent Claim
32 words
The method of claim 1 wherein said titanium portion has a thickness between 5 and 40 nm, and wherein said titanium nitrogen cap portion has a thickness between 30 and 70 nm.
Claim 10
Dependent Claim
24 words
The method of claim 1 wherein said step of annealing comprises annealing at a temperature less than 750° C. and greater than 450° C.
Claim 11
Dependent Claim
18 words
The method of claim 1 wherein said step of annealing comprises annealing for between 10 and 120 minutes.
Claim 12
Dependent Claim
27 words
The method of claim 1 wherein said step of annealing comprises annealing at a temperature between 525° C. and 625° C. for between 20 and 40 minutes.
Claim 13
Dependent Claim
22 words
The method of claim 1 further comprising the step of removing excess of said titanium including film after said step of annealing.
Claim 14
Dependent Claim
42 words
The method of claim 1 wherein said step of depositing a nitride dielectric film comprises depositing a nitride dielectric film atop a contact and further comprising the step of depositing a second contact above said nitride dielectric film, creating a vertical resistor.
Claim 15
Independent Claim
181 words
A method for fabricating a resistive element into an integrated circuit semiconductor device, the method comprising the steps of: a) forming a first contact; b) depositing a silicon nitride film on said first contact, said silicon nitride film having a first side contacting said first contact and an exposed second side and wherein the dimension between said first and second sides defines a resistive dimension, said resistive dimension less than 120 nm; c) depositing a titanium film upon said exposed second side of said silicon nitride film, said titanium film having a thickness between 5 and 40 nm; d) depositing a titanium nitride cap upon said titanium film, said titanium nitrogen cap having a thickness of 30-70 nm; e) annealing said integrated circuit such that titanium is diffused from said titanium film into said dielectric film, said annealing being for 20 to 40 minutes at a temperature between 525° C. and 625° C.; f) removing said titanium film and said titanium nitride cap; and g) forming a second contact, said second contact contacting said second side of said silicon nitride film.
Claim 16
Independent Claim
181 words
A method for fabricating a resistive element into an integrated circuit semiconductor device, the method comprising the steps of: a) forming a first contact; b) depositing a silicon nitride film on said first contact, said silicon nitride film having a first side contacting said first contact and an exposed second side and wherein the dimension between said first and second sides defines a resistive dimension, said resistive dimension less than 120 nm; c) depositing a titanium film upon said exposed second side of said silicon nitride film, said titanium film having a thickness between 5 and 40 nm; d) depositing a titanium nitride cap upon said titanium film, said titanium nitrogen cap having a thickness of 30-70 nm; e) annealing said integrated circuit such that titanium is diffused from said titanium film into said dielectric film, said annealing being for 20 to 40 minutes at a temperature between 525° C. and 625° C.; f) removing said titanium film and said titanium nitride cap; and g) forming a second contact, said second contact contacting said second side of said silicon nitride film.
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