US5030588A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making semiconductor device with film resistor
Assignee: Seiko Instruments Inc
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Filing: 1989-04-03
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Granted: 1991-07-09
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Expires: 2009-04-03
Abstract
Abstract A method of making a semiconductor device having a film resistive element. A resistive film is deposited over a substrate formed with a first contact hole open to an under-layer electrode region disposed in or on the substrate. The resistive layer is selectively etched to form the film resistive element and at the same time to leave portion of the resistive film disposed in and around the first contact hole. An inter-layer insulating film is then formed over the substrate. The inter-layer insulating film is selectively etched to form a second contact hole open to the film resistive element and at the same time to remove at least portion of the inter-layer insulating film disposed in and around the first contact hole. An over-layer electrode pattern film is formed in contact with the resistive film left in the first and second contact holes.
Inventors
- 👤 Takashi Hosaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 13:15
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/47; H10D1/474; H10D84/00; H10D84/80; H10D84/811; H10D84/40; H10D84/401; H10D84/403; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10W20/44; H10W20/4403; H10W20/4405; H10W20/4407
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
159 words
A method of making a semiconductor device having a film resistor element, comprising the steps of: providing a substrate formed with a first contact hole open to an under-layer electrode region; depositing a resistive film over the substrate; selective etching the resistive film to form a film resistor element and to leave a portion of the resistive film disposed in and around the first contact hole; forming an inter-layer insulating film over the substrate; selectively etching the inter-layer insulating film to form a second contact hole open to the film resistor element and to remove at least a portion of the inter-layer insulating film disposed in and around the first contact hole; and forming an over-layer electrode pattern film in contact with the resistive film left in the first and second contact holes by depositing an electrode film over the substrate, and selectively etching the electrode film concurrently with the resistive film to form the over-layer electrode pattern film.
Claim 2
Independent Claim
159 words
A method of making a semiconductor device having a film resistor element, comprising the steps of: providing a substrate formed with a first contact hole open to an under-layer electrode region; depositing a resistive film over the substrate; selective etching the resistive film to form a film resistor element and to leave a portion of the resistive film disposed in and around the first contact hole; forming an inter-layer insulating film over the substrate; selectively etching the inter-layer insulating film to form a second contact hole open to the film resistor element and to remove at least a portion of the inter-layer insulating film disposed in and around the first contact hole; and forming an over-layer electrode pattern film in contact with the resistive film left in the first and second contact holes by depositing an electrode film over the substrate, and selectively etching the electrode film concurrently with the resistive film to form the over-layer electrode pattern film.
Claim 3
Dependent Claim
24 words
A method according to claim 1; including the step of carrying out a reflow process to round the edge of the first contact hole.
Claim 4
Dependent Claim
18 words
A method according to claim 1; wherein the over-layer electrode pattern film composed is of metal containing aluminum.
Claim 5
Dependent Claim
19 words
A method according to claim 1; wherein the step of depositing comprises depositing a resistive film composed of NiCr.
Claim 6
Dependent Claim
30 words
A method according to claim 1; wherein the step of depositing a resistive film comprises depositing a resistive film composed of tungsten silicide at a thickness of less that 2000Å.
Claim 7
Dependent Claim
33 words
A method of claim 5; wherein the step of depositing comprises depositing the resistive film composed of WSi x where the value of x is set within the range of 1 to 10.
Claim 8
Independent Claim
228 words
A method of making a semiconductor device having a film resist or element, comprising the steps of: providing a substrate having an electrode region which is exposed through a first contact hole; depositing a resistive film over the substrate and in and around the first contact hole; selectively etching the resistive film to leave a portion thereof which defines a film resist or element and to leave another portion thereof in and around the first contact hole; forming an inter-layer insulating film over the substrate, the inter-layer insulating film extending over the film resistive element and over the resist or film which remains in and around the first contact hole; selectively etching the inter-layer insulating film to form a second contact hole open to the film resist or element and to remove at least the portion of the inter-layer insulating film disposed in and around the first contact hole to expose the resistive film in the region of the first contact hole; depositing an electrode film on the substrate, the electrode film extending in and around the second contact hole and over the exposed film resistor element; and selectively etching the electrode film concurrently with the resistive film to form an electrode film pattern in contact with the film resistor element through the second contact hole and in contact with the resistive film through the first contact hole.
Claim 9
Independent Claim
228 words
A method of making a semiconductor device having a film resist or element, comprising the steps of: providing a substrate having an electrode region which is exposed through a first contact hole; depositing a resistive film over the substrate and in and around the first contact hole; selectively etching the resistive film to leave a portion thereof which defines a film resist or element and to leave another portion thereof in and around the first contact hole; forming an inter-layer insulating film over the substrate, the inter-layer insulating film extending over the film resistive element and over the resist or film which remains in and around the first contact hole; selectively etching the inter-layer insulating film to form a second contact hole open to the film resist or element and to remove at least the portion of the inter-layer insulating film disposed in and around the first contact hole to expose the resistive film in the region of the first contact hole; depositing an electrode film on the substrate, the electrode film extending in and around the second contact hole and over the exposed film resistor element; and selectively etching the electrode film concurrently with the resistive film to form an electrode film pattern in contact with the film resistor element through the second contact hole and in contact with the resistive film through the first contact hole.
Claim 10
Dependent Claim
39 words
A method according to claim 7; wherein the step of depositing an electrode film comprises depositing an electrode film having a thickness sufficiently greater than that of the depositing resistive film to enable both films to be concurrently etched.
Claim 11
Dependent Claim
24 words
A method according to claim 7; wherein the step of depositing a resistive film comprises depositing a resistive film composed of WSi x .
Claim 12
Dependent Claim
16 words
A method according to claim 9, wherein the resistive film has a thickness less than 2000Å.
Claim 13
Dependent Claim
24 words
A method according to claim 10; wherein the value of x in the WSi x composition is in the range of 1 to 10.
Claim 14
Dependent Claim
27 words
A method according to claim 9; wherein the step of depositing a resistive film comprises depositing the resistive film composed of WSi x by chemical vapor deposition.
Claim 15
Dependent Claim
27 words
A method according to claim 9; wherein the step of depositing a resistive film comprises depositing a resistive film composed of WSi x by physical vapor deposition.
Claim 16
Dependent Claim
22 words
A method according to claim 7; wherein the step of depositing a resistive film comprises depositing a resistive film composed of NiCr.
Claim 17
Dependent Claim
30 words
A method of claim 7; wherein the step of forming an inter-layer insulating film comprises forming an inter-layer insulating film having a thickness in the range of 0.1μ to 2.0μ.
Claim 18
Dependent Claim
34 words
A method according to claim 7; wherein the step of forming an inter-layer insulating film comprises forming an inter-layer insulating film selected from the group consisting of silicon dioxide, silicon nitride and silicon oxynitride.
Claim 19
Dependent Claim
21 words
A method according to claim 16; wherein the step of selectively etching the inter-layer insulating film using a hydrofluoric acid solution.
Claim 20
Dependent Claim
25 words
A method according to claim 7; wherein the step of depositing an electrode film comprises depositing an electrode film composed of aluminum or aluminum alloy.
Claim 21
Dependent Claim
23 words
A method according to claim 18; wherein the step of depositing a resistive film comprises depositing a resistive film composed of tungsten silicide.
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