Semiconductor integrated circuit device and manufacture thereof

Abstract

Abstract PURPOSE:To obtain a high speed semiconductor integrated circuit having high density by connecting a high resistance polysilicon layer directly to the semiconductor region of an MISFET. CONSTITUTION:A field oxide film 6 and a gate oxide film 5 are formed on a P type Si substrate 1, and an opening 7 is perforated at the oxide film 5. Polysilicon layers 28, 30 are selectively formed on the openings 7 and the film 5, N type impurity is introduced to form layers 8', 10, 3 and 4. Subsequently, O<+> or the like is selectively introduced into the N type layer 8' to form a high resistance layer 8a and a low resistance layer 8b. Thereafter, the entire surface is coated with an oxide film 11, openings 12, 13 are selectively formed thereat to form electrodes 14, 15 thereon. This configuration forms a resistance element body made of polysilicon connected directly to the N type layer of an MISFET to thereafter obtain a resistance element merely by introducing impurity and substance for lowering the conductivity thereof so as to easily enhance the density and operating speed as an entire device.

Inventors

• 👤 Takao Yano
• 👤 Shinichiro Yamada
• 👤 Takeshi Ogura

Bibliographic Details