US5899711A
Expired / Lapsed
US
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Method for enhancing hydrogenation of thin film transistors using a metal capping layer and method for batch hydrogenation
Assignee: Thomson Licensing SAS
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Filing: 1996-10-11
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Granted: 1999-05-04
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Expires: 2016-10-11
Abstract
Abstract A method for enhancing hydrogenation of an oxide-coated polycrystalline silicon thin-film transistor or devices includes depositing a metal capping layer on the device prior to hydrogenation. In addition, a method for batch hydrogenation of substrates or plates carrying the oxide-coated polycrystalline silicon devices includes placing the plates in a downstream flow from a hydrogen plasma.
Inventors
- 👤 Donald L. Smith
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 19:30
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/94
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
53 words
A method of hydrogenating a polycrystalline silicon device, comprising: depositing a silicon dioxide passivating layer on a polycrystalline silicon device; forming a continuous metal capping layer covering an entire surface of said silicon dioxide passivating layer; and hydrogenating said device having said continuous metal capping layer in the presence of a hydrogen plasma.
Claim 2
Independent Claim
53 words
A method of hydrogenating a polycrystalline silicon device, comprising: depositing a silicon dioxide passivating layer on a polycrystalline silicon device; forming a continuous metal capping layer covering an entire surface of said silicon dioxide passivating layer; and hydrogenating said device having said continuous metal capping layer in the presence of a hydrogen plasma.
Claim 3
Dependent Claim
17 words
The hydrogenating method according to claim 1, wherein said device is a transistor that comprises polycrystalline silicon.
Claim 4
Dependent Claim
18 words
The hydrogenating method according to claim 1, wherein said hydrogenating occurs at a temperature of about 350° C.
Claim 5
Dependent Claim
22 words
The hydrogenating method according to claim 1, wherein said metal is selected from the group consisting of aluminum, platinum, palladium and nickel.
Claim 6
Dependent Claim
19 words
The hydrogenating method according to claim 1, wherein said forming comprises sputtering to form said continuous metal capping layer.
Claim 7
Dependent Claim
25 words
The hydrogenating method according to claim 1, wherein said silicon dioxide passivating layer has a thickness of from about 100 nm to about 1000 nm.
Claim 8
Dependent Claim
24 words
The hydrogenating method according to claim 1, wherein said metal capping layer has a thickness of from about 20 nm to about 200 nm.
Claim 9
Dependent Claim
16 words
The hydrogenating method according to claim 1, wherein said hydrogenating is performed for about 1.2 hours.
Claim 10
Independent Claim
40 words
A method of hydrogenating a polycrystalline silicon device, comprising: depositing a silicon dioxide layer on said polycrystalline silicon device; forming a palladium capping layer on said silicon dioxide layer; and hydrogenating said device in the presence of a hydrogen gas.
Claim 11
Independent Claim
40 words
A method of hydrogenating a polycrystalline silicon device, comprising: depositing a silicon dioxide layer on said polycrystalline silicon device; forming a palladium capping layer on said silicon dioxide layer; and hydrogenating said device in the presence of a hydrogen gas.
Claim 12
Independent Claim
40 words
A method of batch hydrogenating polycrystalline silicon thin-film devices, comprising: placing a plurality of substrates or plates carrying polycrystalline silicon thin-film devices in a vessel downstream of a hydrogen plasma; and hydrogenating said devices with a supply of hydrogen atoms.
Claim 13
Independent Claim
40 words
A method of batch hydrogenating polycrystalline silicon thin-film devices, comprising: placing a plurality of substrates or plates carrying polycrystalline silicon thin-film devices in a vessel downstream of a hydrogen plasma; and hydrogenating said devices with a supply of hydrogen atoms.
Claim 14
Dependent Claim
25 words
The batch hydrogenating method of claim 10, wherein said devices comprise a continuous metal capping layer covering an entire surface of a silicon dioxide layer.
Claim 15
Dependent Claim
18 words
The batch hydrogenating method of claim 11, further comprising adding oxygen or water vapor to said hydrogen plasma.
Claim 16
Dependent Claim
24 words
The batch hydrogenating method of claim 11, wherein said hydrogenating occurs at a temperature of about 350° C. and pressure of about 0.3 Torr.
Claim 17
Dependent Claim
15 words
The batch hydrogenating method of claim 11, wherein said hydrogenating is for about 1 hour.
Claim 18
Dependent Claim
24 words
The hydrogenating method according to claim 9, wherein the palladium capping layer is continuous and covers an entire surface of the silicon dioxide layer.
Claim 19
Dependent Claim
12 words
The batch hydrogenating method of claim 11, wherein said metal is palladium.
References Cited (Backward Citations)
US3620844A
Cited
JPS5975665A
Cited
JPS60245124A
Cited
JPS61232675A
Cited
JPS62221159A
Cited
US5403756A
Cited
US5541119A
Cited
US5470763A
Cited
US5504020A
Cited
US5728610A
Cited
US5627085A
Cited
US5600155A
Cited
US5686335A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-05-03 | 2002-11-02 | 2003-05-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-05-03 | 2006-11-02 | 2007-05-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-05-03 | 2010-11-02 | 2011-05-04 | $7700.00 | Window Closed / Lapsed |