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US5895267A
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Method to obtain a low resistivity and conformity chemical vapor deposition titanium film
Assignee: Bell Semiconductor LLC
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Filing: 1997-07-09
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Granted: 1999-04-20
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Expires: 2017-07-09
Abstract
Abstract A method of forming titanium nitride barrier layers that are highly conformal, have high step coverage and low resistivity through a two stage deposition process is described. Low temperature deposition of titanium nitride barrier layer provides material of high conformity and good step coverage but of high resistivity. High temperature deposition of titanium nitride barrier layer yields material of low resistivity. Thus, a titanium nitride barrier layer deposited in separate steps at low temperature and high temperature by the method of the present invention is particularly suited for use in modern devices of increasing density that are characterized by narrow and deep contact holes.
Inventors
- 👤 Joe W. Zhao
- 👤 Wei-jen Hsia
- 👤 Wilbur G. Catabay
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:54
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
60 words
A method for forming a titanium nitride barrier layer on a partially fabricated electronic device which comprises: depositing a first titanium nitride sublayer on said partially fabricated electronic device at a first temperature; and depositing a second titanium nitride sublayer on said first titanium nitride sublayer at a second temperature wherein said second temperature is greater than said first temperature.
Claim 2
Independent Claim
60 words
A method for forming a titanium nitride barrier layer on a partially fabricated electronic device which comprises: depositing a first titanium nitride sublayer on said partially fabricated electronic device at a first temperature; and depositing a second titanium nitride sublayer on said first titanium nitride sublayer at a second temperature wherein said second temperature is greater than said first temperature.
Claim 3
Dependent Claim
21 words
The method of claim 1 wherein said second temperature is greater than said first temperature by at least about 50° C.
Claim 4
Dependent Claim
33 words
The method of claim 1 wherein said titanium nitride barrier layer is formed through a metal organic chemical vapor deposition of a mixture comprised of a organotitanium compound, a carrier gas and ammonia.
Claim 5
Dependent Claim
20 words
The method of claim 3 wherein the pressure of said mixture is between about 0.5 torr and about 80 torr.
Claim 6
Dependent Claim
21 words
The method of claim 3 wherein the flow rate of said ammonia is between about 3,000 sccm and about 40,000 sccm.
Claim 7
Dependent Claim
22 words
The method of claim 3 wherein the flow rate of said organotitanium compound is between about 0.1 sccm and about 1.0 sccm.
Claim 8
Dependent Claim
23 words
The method of claim 3 wherein said organotitanium compound is selected from the group consisting of tetrakis (diethylamido) titanium and tetrakis (dimethylamido) titanium.
Claim 9
Dependent Claim
31 words
The method of claim 1 wherein said titanium nitride barrier layer is formed on a dielectric layer of said partially fabricated electronic device, said dielectric layer having vias or contact holes.
Claim 10
Dependent Claim
18 words
The method of claim 1 wherein said first temperature is between about 200° C. and about 300° C.
Claim 11
Dependent Claim
18 words
The method of claim 9 wherein said first temperature is between about 250° C. and about 300° C.
Claim 12
Dependent Claim
18 words
The method of claim 1 wherein said second temperature is between about 340° C. and about 500° C.
Claim 13
Dependent Claim
18 words
The method of claim 11 wherein said second temperature is between about 340° C. and about 400° C.
Claim 14
Dependent Claim
21 words
The method of claim 1 wherein said first titanium nitride sublayer is between about 50 Å and about 600 Å thick.
Claim 15
Dependent Claim
21 words
The method of claim 13 wherein said first titanium nitride sublayer is between about 100 Å and about 200 Å thick.
Claim 16
Dependent Claim
21 words
The method of claim 1 wherein said second titanium nitride sublayer is between about 20 Å and about 200 Å thick.
Claim 17
Dependent Claim
21 words
The method of claim 15 wherein said second titanium nitride sublayer is between about 20 Å and about 100 Å thick.
Claim 18
Dependent Claim
60 words
The method of claim 1 wherein said titanium nitride barrier layer is formed in a multi-stage chemical vapor deposition reactor whereby said partially fabricated electronic device is moved between stages and wherein said first titanium nitride sublayer is formed in one or more of said stages and said second titanium nitride sublayer is formed in one or more different stages.
Claim 19
Dependent Claim
18 words
The method of claim 17 wherein said multi-stage chemical vapor deposition reactor contains between two and six stages.
Claim 20
Dependent Claim
26 words
The method of claim 18 wherein said second titanium nitride sublayer is deposited in not more than two stages of said multi-stage chemical vapor deposition reactor.
References Cited (Backward Citations)
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| 7.5 Years (Year 8) | 2006-04-19 | 2006-10-19 | 2007-04-20 | $3760.00 | Window Closed / Lapsed |
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