Patent US5892254A successfully refreshed from Google Patents.
US5892254A
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Integrated circuit capacitors including barrier layers having grain boundary filling material
Assignee: Samsung Electronics Co Ltd
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Filing: 1997-09-30
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Granted: 1999-04-06
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Expires: 2017-09-30
Abstract
Abstract A barrier layer is included in an integrated circuit capacitor, between a conductive plug and a lower capacitor electrode. The barrier layer includes refractory metal and grain boundary filling material. The grain boundary filling material preferably is Ce, Zr, Y, Th, Hf, La, Al and/or oxides thereof, and is preferably less that 20 atomic percent of the barrier layer. The barrier layer can reduce and preferably prevent diffusion of oxygen, and can thereby reduce the leakage current and oxidation of the integrated circuit capacitor.
Inventors
- 👤 Chang-soo Park
- 👤 Sang-in Lee
- 👤 Hong-ku Paik
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:19
CPC Classifications
H; H10; H10B; H10B12/00; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/046; H10D; H10D1/00; H10D1/60; H10D1/62; H10D1/68; H10D1/692; H10D1/696; H10W20/033; H10W20/037; H10W20/047; H10D1/682; H10P; H10P14/00; H10P14/40; H10P14/418
Claims Analysis
Total Claims: 38
Claim 1
Independent Claim
67 words
An integrated circuit capacitor comprising: a conductive plug on an integrated circuit substrate; a barrier layer comprising refractory metal and barrier layer grain boundary filling material, on the conductive plug; a lower electrode comprising platinum group metal and lower electrode grain boundary filling material on the barrier layer; a high dielectric constant layer on the lower electrode; and an upper electrode on the high dielectric constant layer.
Claim 2
Dependent Claim
67 words
An integrated circuit capacitor comprising: a conductive plug on an integrated circuit substrate; a barrier layer comprising refractory metal and barrier layer grain boundary filling material, on the conductive plug; a lower electrode comprising platinum group metal and lower electrode grain boundary filling material on the barrier layer; a high dielectric constant layer on the lower electrode; and an upper electrode on the high dielectric constant layer.
Claim 3
Dependent Claim
35 words
A capacitor according to claim 1 wherein the barrier layer grain boundary filling material comprises at least one material selected from the group consisting of Ce, Zr, Y, Th, Hf, La, Al and oxides thereof.
Claim 4
Dependent Claim
24 words
A capacitor according to claim 1 wherein the barrier layer grain boundary filling material is less than 20 atomic percent of the barrier layer.
Claim 5
Dependent Claim
19 words
A capacitor according to claim 1 further comprising an ohmic layer between the conductive plug and the barrier layer.
Claim 6
Dependent Claim
13 words
A capacitor according to claim 4 wherein the ohmic layer comprises titanium silicide.
Claim 7
Dependent Claim
36 words
A conductive electrode according to claim 1 wherein the lower electrode grain boundary filling material comprises at least one material selected from the group consisting of Ce, Zr, Y, Th, Hf, La, Al and oxides thereof.
Claim 8
Dependent Claim
25 words
A conductive electrode according to claim 1 wherein the lower electrode grain boundary filling material is less than 20 atomic percent of the barrier layer.
Claim 9
Dependent Claim
105 words
An integrated circuit capacitor comprising: a conductive plug on an integrated circuit substrate: a barrier layer comprising refractory metal and barrier layer grain boundary filling material, on the conductive plug; a lower electrode on the barrier layer: a high dielectric constant layer on the lower electrode; and an upper electrode on the high dielectric constant layer, wherein the lower electrode comprises: a first lower electrode layer comprising platinum group metal and lower electrode grain boundary filling material on the barrier layer; and a second lower electrode layer comprising platinum group metal that is free of grain boundary filling material on the first lower electrode layer.
Claim 10
Dependent Claim
105 words
An integrated circuit capacitor comprising: a conductive plug on an integrated circuit substrate: a barrier layer comprising refractory metal and barrier layer grain boundary filling material, on the conductive plug; a lower electrode on the barrier layer: a high dielectric constant layer on the lower electrode; and an upper electrode on the high dielectric constant layer, wherein the lower electrode comprises: a first lower electrode layer comprising platinum group metal and lower electrode grain boundary filling material on the barrier layer; and a second lower electrode layer comprising platinum group metal that is free of grain boundary filling material on the first lower electrode layer.
Claim 11
Dependent Claim
35 words
A capacitor according to claim 8 wherein the barrier layer grain boundary filling material comprises at least one material selected from the group consisting of Ce, Zr, Y, Th, Hf, La, Al and oxides thereof.
Claim 12
Dependent Claim
24 words
A capacitor according to claim 8 wherein the barrier layer grain boundary filling material is less than 20 atomic percent of the barrier layer.
Claim 13
Dependent Claim
19 words
A capacitor according to claim 6 further comprising an ohmic layer between the conductive plug and the barrier layer.
Claim 14
Dependent Claim
13 words
A capacitor according to claim 11 wherein the ohmic layer comprises titanium silicide.
Claim 15
Dependent Claim
35 words
A capacitor according to claim 8 wherein the lower electrode grain boundary filling material is at least one material selected from the group consisting of Ce, Zr, Y, Th, Hf, La, Al and oxides thereof.
Claim 16
Dependent Claim
24 words
A capacitor according to claim 8 wherein the lower electrode grain boundary filling material is less than 20 atomic percent of the barrier layer.
Claim 17
Dependent Claim
49 words
An integrated circuit conductive electrode comprising: a conductive plug on an integrated circuit substrate; a barrier layer comprising refractory metal and barrier layer grain boundary filling material, on the conductive plug; and an electrode layer comprising platinum group metal and electrode grain boundary filling material on the barrier layer.
Claim 18
Dependent Claim
49 words
An integrated circuit conductive electrode comprising: a conductive plug on an integrated circuit substrate; a barrier layer comprising refractory metal and barrier layer grain boundary filling material, on the conductive plug; and an electrode layer comprising platinum group metal and electrode grain boundary filling material on the barrier layer.
Claim 19
Dependent Claim
36 words
A conductive electrode according to claim 15 wherein the barrier layer grain boundary filling material comprises at least one material selected from the group consisting of Ce, Zr, Y, Th, Hf, La, Al and oxides thereof.
Claim 20
Dependent Claim
25 words
A conductive electrode according to claim 15 wherein the barrier layer grain boundary filling material is less than 20 atomic percent of the barrier layer.
Claim 21
Dependent Claim
35 words
A conductive electrode according to claim 15 wherein the electrode grain boundary filling material comprises at least one material selected from the group consisting of Ce, Zr, Y, Th, Hf, La, Al and oxides thereof.
Claim 22
Dependent Claim
24 words
A conductive electrode according to claim 15 wherein the electrode grain boundary filling material is less than 20 atomic percent of the barrier layer.
Claim 23
Dependent Claim
84 words
An integrated circuit conductive electrode comprising: a conductive plug on an integrated circuit substrate; a barrier layer comprising refractory metal and barrier layer grain boundary filling material, on the conductive plug; and an electrode layer on the barrier layer; wherein the electrode layer comprises: a first electrode layer comprising platinum group metal and electrode grain boundary filling material on the barrier layer; and a second electrode layer comprising platinum group metal that is free of grain boundary filling material on the first electrode layer.
Claim 24
Dependent Claim
84 words
An integrated circuit conductive electrode comprising: a conductive plug on an integrated circuit substrate; a barrier layer comprising refractory metal and barrier layer grain boundary filling material, on the conductive plug; and an electrode layer on the barrier layer; wherein the electrode layer comprises: a first electrode layer comprising platinum group metal and electrode grain boundary filling material on the barrier layer; and a second electrode layer comprising platinum group metal that is free of grain boundary filling material on the first electrode layer.
Claim 25
Dependent Claim
36 words
A conductive electrode according to claim 20 wherein the barrier layer grain boundary filling material comprises at least one material selected from the group consisting of Ce, Zr, Y, Th, Hf, La, Al and oxides thereof.
Claim 26
Dependent Claim
25 words
A conductive electrode according to claim 20 wherein the barrier layer grain boundary filling material is less than 20 atomic percent of the barrier layer.
Claim 27
Dependent Claim
20 words
A conductive electrode according to claim 20 further comprising an ohmic layer between the conductive plug and the barrier layer.
Claim 28
Dependent Claim
14 words
A conductive electrode according to claim 23 wherein the ohmic layer comprises titanium silicide.
Claim 29
Dependent Claim
35 words
A conductive electrode according to claim 20 wherein the electrode grain boundary filling material comprises at least one material selected from the group consisting of Ce, Zr, Y, Th, Hf, La, Al and oxides thereof.
Claim 30
Dependent Claim
24 words
A conductive electrode according to claim 20 wherein the electrode grain boundary filling material is less than 20 atomic percent of the barrier layer.
Claim 31
Dependent Claim
18 words
An integrated circuit conductive electrode comprising: an electrode layer comprising platinum group metal and grain boundary filling material.
Claim 32
Dependent Claim
18 words
An integrated circuit conductive electrode comprising: an electrode layer comprising platinum group metal and grain boundary filling material.
Claim 33
Dependent Claim
34 words
A conductive electrode according to claim 27 wherein the grain boundary filling material is at least one material selected from the group consisting of Ce, Zr, Y, Th, Hf, La, Al and oxides thereof.
Claim 34
Dependent Claim
23 words
A conductive electrode according to claim 27 wherein the grain boundary filling material is less than 20 atomic percent of the barrier layer.
Claim 35
Dependent Claim
41 words
An integrated circuit conductive electrode comprising: a first electrode layer comprising platinum group metal and grain boundary filling material; and a second electrode layer comprising platinum group metal that is free of grain boundary filling material on the first electrode layer.
Claim 36
Dependent Claim
41 words
An integrated circuit conductive electrode comprising: a first electrode layer comprising platinum group metal and grain boundary filling material; and a second electrode layer comprising platinum group metal that is free of grain boundary filling material on the first electrode layer.
Claim 37
Dependent Claim
34 words
A conductive electrode according to claim 30 wherein the grain boundary filling material is at least one material selected from the group consisting of Ce, Zr, Y, Th, Hf, La, Al and oxides thereof.
Claim 38
Dependent Claim
23 words
A conductive electrode according to claim 30 wherein the grain boundary filling material is less than 20 atomic percent of the barrier layer.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2002-04-05 | 2002-10-05 | 2003-04-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-04-05 | 2006-10-05 | 2007-04-06 | $3760.00 | Window Closed / Lapsed |
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