US5891809A
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Manufacturable dielectric formed using multiple oxidation and anneal steps
Assignee: Intel Corp
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Filing: 1995-09-29
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Granted: 1999-04-06
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Expires: 2015-09-29
Abstract
Abstract A method of forming a thin, robust nitrided oxide layer. The process results in a manufacturable, uniform, low-defect density, reliable nitrided oxide that may be used as a gate dielectric, as a portion of a spacer, or as a portion of a trench isolation. First, a substrate is oxidized in a chlorinated dry oxidation followed by a low temperature pyrogenic steam oxidation. Next, a low temperature ammonia anneal is performed, followed by a high temperature anneal in an inert ambient.
Inventors
- 👤 Robert S. K. Chau
- 👤 Lawrence N. Brigham
- 👤 Chia-Hong Jan
- 👤 Chan-Hong Chern
- 👤 Binny P. Arcot
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 09:21
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D64/01344; H10D64/01346; H10D64/021; H10D64/60; H10D64/66; H10D64/68; H10D64/693; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322; H10P14/65; H10P14/6516; H10P14/6518; H10P14/6524; H10P14/6526; H10P14/6529; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6927; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0145; H10W10/0147; H10W10/10; H10W10/17
Claims Analysis
Total Claims: 40
Claim 1
Independent Claim
150 words
A method of forming an oxide layer comprising the steps of: a) providing a semiconductor substrate; b) placing said semiconductor substrate in a furnace; c) exposing said semiconductor substrate to a first ambient at a first temperature, said first ambient comprising a chlorine containing compound; d) exposing said semiconductor substrate to a second ambient at a second temperature, said second ambient comprising steam, said semiconductor substrate having an oxide layer formed thereon subsequent to said steps of exposing said semiconductor substrate to said first ambient and said second ambient; e) exposing said semiconductor substrate to a third ambient at a third temperature in an RTP system, said third ambient comprising a nitrogen-containing compound that nitridizes at least a portion of said oxide layer to form a nitrided oxide layer; and f) exposing said semiconductor substrate to a fourth ambient at a fourth temperature, said fourth ambient comprising an inert gas.
Claim 2
Independent Claim
150 words
A method of forming an oxide layer comprising the steps of: a) providing a semiconductor substrate; b) placing said semiconductor substrate in a furnace; c) exposing said semiconductor substrate to a first ambient at a first temperature, said first ambient comprising a chlorine containing compound; d) exposing said semiconductor substrate to a second ambient at a second temperature, said second ambient comprising steam, said semiconductor substrate having an oxide layer formed thereon subsequent to said steps of exposing said semiconductor substrate to said first ambient and said second ambient; e) exposing said semiconductor substrate to a third ambient at a third temperature in an RTP system, said third ambient comprising a nitrogen-containing compound that nitridizes at least a portion of said oxide layer to form a nitrided oxide layer; and f) exposing said semiconductor substrate to a fourth ambient at a fourth temperature, said fourth ambient comprising an inert gas.
Claim 3
Dependent Claim
35 words
The method as described in claim 1 wherein said step b) is performed by pushing said substrate into said furnace in a flow of gas comprising an inert gas and approximately 5% or less oxygen.
Claim 4
Dependent Claim
26 words
The method as described in claim 1 further comprising the step of annealing said substrate in an ambient comprising an inert gas after said step d).
Claim 5
Dependent Claim
17 words
The method as described in claim 1 wherein said fourth temperature is greater than said third temperature.
Claim 6
Dependent Claim
51 words
The method as described in claim 1 further comprising the step of exposing said semiconductor substrate to a fifth ambient at a fifth temperature between said steps e) and f), said fifth ambient comprising an inert gas, wherein said fifth temperature is below said third temperature and below said fourth temperature.
Claim 7
Dependent Claim
44 words
The method as described in claim 1 wherein said first temperature is below approximately 850° C., wherein said second temperature is below approximately 850° C., wherein said third temperature is below approximately 1000° C., and wherein said fourth temperature is above approximately 900° C.
Claim 8
Dependent Claim
44 words
The method as described in claim 2 wherein said first temperature is below approximately 850° C., wherein said second temperature is below approximately 850° C., wherein said third temperature is below approximately 1000° C., and wherein said fourth temperature is above approximately 900° C.
Claim 9
Dependent Claim
44 words
The method as described in claim 3 wherein said first temperature is below approximately 850° C., wherein said second temperature is below approximately 850° C., wherein said third temperature is below approximately 1000° C., and wherein said fourth temperature is above approximately 900° C.
Claim 10
Dependent Claim
44 words
The method as described in claim 4 wherein said first temperature is below approximately 850° C., wherein said second temperature is below approximately 850° C., wherein said third temperature is below approximately 1000° C., and wherein said fourth temperature is above approximately 900° C.
Claim 11
Dependent Claim
44 words
The method as described in claim 5 wherein said first temperature is below approximately 850° C., wherein said second temperature is below approximately 850° C., wherein said third temperature is below approximately 1000° C., and wherein said fourth temperature is above approximately 900° C.
Claim 12
Dependent Claim
16 words
The method as described in claim 5 wherein said fifth temperature is below approximately 650° C.
Claim 13
Dependent Claim
16 words
The method as described in claim 10 wherein said fifth temperature is below approximately 650° C.
Claim 14
Dependent Claim
19 words
The method as described in claim 1 wherein said first ambient comprises approximately 9% or greater volume concentration chlorine.
Claim 15
Dependent Claim
13 words
The method as described in claim 1 wherein said chlorinecontaining compound comprises DCE.
Claim 16
Dependent Claim
22 words
The method as described in claim 1 wherein said nitrided oxide layer is formed as a gate dielectric of a semiconductor device.
Claim 17
Dependent Claim
31 words
The method as described in claim 1 wherein said nitrided oxide layer is formed as a portion of a spacer, said spacer formed on a gate electrode of a semiconductor device.
Claim 18
Dependent Claim
22 words
The method as described in claim 1 wherein said nitrided oxide layer is formed in a trench formed in a semiconductor substrate.
Claim 19
Dependent Claim
21 words
The method as described in claim 1 wherein said oxide layer has a thickness in the range of approximately 20-80 Å.
Claim 20
Dependent Claim
21 words
The method as described in claim 2 wherein said oxide layer has a thickness in the range of approximately 20-80 Å.
Claim 21
Dependent Claim
21 words
The method as described in claim 3 wherein said oxide layer has a thickness in the range of approximately 20-80 Å.
Claim 22
Dependent Claim
21 words
The method as described in claim 4 wherein said oxide layer has a thickness in the range of approximately 20-80 Å.
Claim 23
Dependent Claim
21 words
The method as described in claim 5 wherein said oxide layer has a thickness in the range of approximately 20-80 Å.
Claim 24
Dependent Claim
21 words
The method as described in claim 6 wherein said oxide layer has a thickness in the range of approximately 20-80 Å.
Claim 25
Dependent Claim
21 words
The method as described in claim 8 wherein said oxide layer has a thickness in the range of approximately 20-80 Å.
Claim 26
Dependent Claim
22 words
The method as described in claim 3 wherein said temperature is below approximately 850° C. during said step of annealing said substrate.
Claim 27
Dependent Claim
26 words
The method as described in claim 1 further comprising the step of annealing said substrate after said step f) in an ambient comprising an inert gas.
Claim 28
Dependent Claim
21 words
The method as described in claim 26 wherein said anneal is performed at a temperature of approximately 700° C. or less.
Claim 29
Independent Claim
80 words
A method of treating an oxide layer comprising: a) providing a semiconductor substrate having an oxide layer thereon; b) exposing said oxide layer to a first ambient at a first temperature in an RTP system, said first ambient comprising a nitrogen-containing compound that nitridizes at least a portion of said oxide layer; c) exposing said oxide layer to a second ambient at a second temperature, said second temperature greater than said first temperature, said second ambient comprising an inert gas.
Claim 30
Independent Claim
80 words
A method of treating an oxide layer comprising: a) providing a semiconductor substrate having an oxide layer thereon; b) exposing said oxide layer to a first ambient at a first temperature in an RTP system, said first ambient comprising a nitrogen-containing compound that nitridizes at least a portion of said oxide layer; c) exposing said oxide layer to a second ambient at a second temperature, said second temperature greater than said first temperature, said second ambient comprising an inert gas.
Claim 31
Dependent Claim
51 words
The method as described in claim 28 further comprising the step of exposing said semiconductor substrate to a third ambient at a third temperature between said steps b) and c), said third ambient comprising an inert gas, wherein said third temperature is below said first temperature and below said second temperature.
Claim 32
Dependent Claim
26 words
The method as described in claim 28 wherein said first temperature is below approximately 1000° C., and wherein said second temperature is above approximately 900° C.
Claim 33
Dependent Claim
26 words
The method as described in claim 29 wherein said first temperature is below approximately 1000° C., and wherein said second temperature is above approximately 900° C.
Claim 34
Dependent Claim
16 words
The method as described in claim 29 wherein said third temperature is below approximately 650° C.
Claim 35
Dependent Claim
16 words
The method as described in claim 31 wherein said third temperature is below approximately 650° C.
Claim 36
Dependent Claim
25 words
The method as described in claim 28 wherein said method is performed on an oxide layer formed as a gate dielectric of a semiconductor device.
Claim 37
Dependent Claim
34 words
The method as described in claim 28 wherein said method is performed on an oxide layer formed as a portion of a spacer, said spacer formed on a gate electrode of a semiconductor device.
Claim 38
Dependent Claim
25 words
The method as described in claim 28 wherein said method is performed on an oxide layer formed in a trench formed in a semiconductor substrate.
Claim 39
Dependent Claim
26 words
The method as described in claim 28 further comprising the step of annealing said substrate after said step c) in an ambient comprising an inert gas.
Claim 40
Dependent Claim
21 words
The method as described in claim 37 wherein said anneal is performed at a temperature of approximately 700° C. or less.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-04-05 | 2002-10-05 | 2003-04-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-04-05 | 2006-10-05 | 2007-04-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-04-05 | 2010-10-05 | 2011-04-06 | $7700.00 | Window Closed / Lapsed |