US5174881A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus for forming a thin film on surface of semiconductor substrate
Assignee: Mitsubishi Electric Corp
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Filing: 1991-06-28
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Granted: 1992-12-29
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Expires: 2011-06-28
Abstract
Abstract A method of and an apparatus for removing a naturally grown oxide film and contaminants on the surface of a semiconductor substrate and then forming a thin film on the cleaned surface. The semiconductor substrate is placed in a pretreatment chamber and then hydrogen chloride gas is introduced into the chamber. Then, the semiconductor substrate is heated at a temperature between 200°˜700° C. and the surface of the semiconductor substrate is irradiated with ultraviolet rays, whereby the naturally grown oxide film and other contaminants on the semiconductor substrate can be removed. Then, a thin film is formed on the cleaned surface of the semiconductor substrate by a CVD method or a sputter method. According to this method, the naturally oxide film and other contaminants can be removed from the surface of the semiconductor substrate at a low temperature and the thin film can be formed on the cleaned surface. As a result, an interface structure between the semiconductor substrate and the thin film can be controlled to be in a preferable state.
Inventors
- 👤 Masanobu Iwasaki
- 👤 Hiromi Itoh
- 👤 Akira Tokui
- 👤 Katsuyoshi Mitsui
- 👤 Katsuhiro Tsukamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 15:01
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/54; C23C14/00; C23C14/02; C23C14/021; C23C14/022; C23C14/22; C23C14/56; C23C14/568; C23C16/02; C23C16/0227; C23C16/0236
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
239 words
An apparatus for removing a naturally grown oxide film and other contaminants from a surface of a semiconductor substrate to clean said surface and for forming a thin film on the cleaned surface by sputtering, said apparatus comprising: a chamber means for housing said semiconductor substrate to be treated; reaction gas introducing means for introducing into said chamber a gas capable of reacting with said naturally grown oxide film and other contaminants; energy generating means for removing said naturally grown oxide film by a photochemical reaction without transforming nearly amorphous silicon into polycrystalline silicon, said energy generating means including heating means for heating said semiconductor substrate at a temperature within the range of 200°˜700° C., and radiation means for creating a photochemical reaction of said naturally grown oxide film and other contaminants on said surface of said semiconductor substrate with reaction gas introduced into said chamber when said semiconductor substrate is heated to within said temperature range; sputtering target means in said chamber for providing elements of the thin film to be formed on said cleaned surface of the semiconductor substrate; and substrate moving means for moving said semiconductor substrate to a first plane in which said surface is unobstructedly exposed to said radiation means and a side of said semiconductor substrate opposite said surface faces to said heating means, and for moving said semiconductor substrate to a second plane in which said surface unobstructedly faces the sputtering target.
Claim 2
Independent Claim
239 words
An apparatus for removing a naturally grown oxide film and other contaminants from a surface of a semiconductor substrate to clean said surface and for forming a thin film on the cleaned surface by sputtering, said apparatus comprising: a chamber means for housing said semiconductor substrate to be treated; reaction gas introducing means for introducing into said chamber a gas capable of reacting with said naturally grown oxide film and other contaminants; energy generating means for removing said naturally grown oxide film by a photochemical reaction without transforming nearly amorphous silicon into polycrystalline silicon, said energy generating means including heating means for heating said semiconductor substrate at a temperature within the range of 200°˜700° C., and radiation means for creating a photochemical reaction of said naturally grown oxide film and other contaminants on said surface of said semiconductor substrate with reaction gas introduced into said chamber when said semiconductor substrate is heated to within said temperature range; sputtering target means in said chamber for providing elements of the thin film to be formed on said cleaned surface of the semiconductor substrate; and substrate moving means for moving said semiconductor substrate to a first plane in which said surface is unobstructedly exposed to said radiation means and a side of said semiconductor substrate opposite said surface faces to said heating means, and for moving said semiconductor substrate to a second plane in which said surface unobstructedly faces the sputtering target.
Claim 3
Independent Claim
232 words
An apparatus for removing a naturally grown oxide film and other contaminants from a surface of a semiconductor substrate to clean said surface and for forming a thin film on said cleaned surface, said apparatus comprising: a first chamber for housing said semiconductor substrate to be treated; reaction gas introducing means for introducing into said chamber a gas capable of reacting with said naturally grown oxide film and other contaminants; energy generating means for removing said naturally grown oxide film by a photochemical reaction without transforming nearly amorphous silicon into polycrystalline silicon, said energy generating means including heating means for heating said semiconductor substrate at a temperature within the range of 200°˜700° C., and radiation means for creating a photochemical reaction of said naturally grown oxide film and other contaminants on the surface of said semiconductor substrate with reaction gas introduced into said chamber at said temperature within the range of 200°˜700° C., while said semiconductor substrate is being heated; a second chamber communicating with said first chamber and having a sputtering target arranged therein for forming said thin film on said surface of the semiconductor substrate; and substrate moving means for moving said semiconductor substrate from said first chamber in which said semiconductor substrate surface is unobstructedly exposed to said radiation means and a side of said semiconductor substrate opposite said surface faces to said heating means to said second chamber.
Claim 4
Independent Claim
232 words
An apparatus for removing a naturally grown oxide film and other contaminants from a surface of a semiconductor substrate to clean said surface and for forming a thin film on said cleaned surface, said apparatus comprising: a first chamber for housing said semiconductor substrate to be treated; reaction gas introducing means for introducing into said chamber a gas capable of reacting with said naturally grown oxide film and other contaminants; energy generating means for removing said naturally grown oxide film by a photochemical reaction without transforming nearly amorphous silicon into polycrystalline silicon, said energy generating means including heating means for heating said semiconductor substrate at a temperature within the range of 200°˜700° C., and radiation means for creating a photochemical reaction of said naturally grown oxide film and other contaminants on the surface of said semiconductor substrate with reaction gas introduced into said chamber at said temperature within the range of 200°˜700° C., while said semiconductor substrate is being heated; a second chamber communicating with said first chamber and having a sputtering target arranged therein for forming said thin film on said surface of the semiconductor substrate; and substrate moving means for moving said semiconductor substrate from said first chamber in which said semiconductor substrate surface is unobstructedly exposed to said radiation means and a side of said semiconductor substrate opposite said surface faces to said heating means to said second chamber.
Claim 5
Dependent Claim
46 words
An apparatus according to claim 1, further comprising a third chamber positioned between said first chamber and said second chamber, said third chamber adapted to being filled with a gas atmosphere controlled such that naturally grown oxide film may not be formed in said third chamber.
Claim 6
Dependent Claim
36 words
The apparatus according to claim 1, wherein said sputtering target is arranged such that the surface of said semiconductor substrate is opposite to said sputtering target when the thin film is formed on said semiconductor substrate.
References Cited (Backward Citations)
US4025410A
Cited
US4183780A
Cited
US4351714A
Cited
JPS6053032A
Cited
US4597826A
Cited
JPS6127621A
Cited
JPS61124123A
Cited
US4678536A
Cited
US4716852A
Cited
US4689112A
Cited
US4724159A
Cited
US4808553A
Cited
US4902671A
Cited
US4871416A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-12-29 | 1996-06-29 | 1996-12-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-12-29 | 2000-06-29 | 2000-12-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-12-29 | 2004-06-29 | 2004-12-29 | $7700.00 | Window Closed / Lapsed |