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US5888844A
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Method of etching semiconductor laser device having Alx Ga1-x As and Alv Ga1-(v+y) Iny P compound
Assignee: Sharp Corp
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Filing: 1997-02-26
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Granted: 1999-03-30
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Expires: 2017-02-26
Abstract
Abstract An (Al,Ga)As/(Al,Ga,In)P semiconductor layer structure is etched using an SiCl4 or an SiCl4/(He,Ne) plasma. The etching is carried out at 0 DEG to 80 DEG C. and at a plasma pressure below 1.33x10-1 Pa (1 mTorr). The etched surfaces are sufficiently smooth for the etching process to be used in the production of (Al,Ga)As/(Al,Ga,In)P semiconductor lasers.
Inventors
- 👤 Timothy David Bestwick
- 👤 Craig Tombling
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 16:27
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/246; H01; H01S; H01S5/00; H01S5/20; H01S5/2054; H01S5/2081; H01S5/209; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32325; Y; Y10; Y10S; Y10S148/00; Y10S148/095
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
69 words
A method of etching an (Al,Ga)As/(Al,Ga,In)P semiconductor layer structure comprising a Al x Ga 1-x As layer (0≦x≦1) and a Al v Ga 1- (v+y) In y P layer (0≦v≦1, 0≦y≦1 and v+y≦1), comprising a plasma etching step for etching the (Al,Ga)As/(Al,Ga,In)P semiconductor layer structure using an SiCl 4 plasma, wherein the plasma etching step is performed at a pressure less than about 1.33×10 -1 Pa (about 1 mTorr).
Claim 2
Independent Claim
69 words
A method of etching an (Al,Ga)As/(Al,Ga,In)P semiconductor layer structure comprising a Al x Ga 1-x As layer (0≦x≦1) and a Al v Ga 1- (v+y) In y P layer (0≦v≦1, 0≦y≦1 and v+y≦1), comprising a plasma etching step for etching the (Al,Ga)As/(Al,Ga,In)P semiconductor layer structure using an SiCl 4 plasma, wherein the plasma etching step is performed at a pressure less than about 1.33×10 -1 Pa (about 1 mTorr).
Claim 3
Dependent Claim
32 words
A method of etching according to claim 1, wherein the SiCl 4 plasma contains at least one low atomic mass gas which is inert in the plasma during the plasma etching step.
Claim 4
Dependent Claim
23 words
A method of etching according to claim 2, wherein the at least one low atomic mass gas is selected from He and Ne.
Claim 5
Dependent Claim
37 words
A method of etching according to claim 1, wherein the plasma etching step is performed at a pressure of between about 1.33×10 -2 Pa and about 2.66×10 -2 Pa (between about 0.1 mTorr and about 0.2 mTorr).
Claim 6
Dependent Claim
24 words
A method of etching according to claim 1, further comprising a step of chemically etching the semiconductor layer structure after the plasma etching step.
Claim 7
Dependent Claim
38 words
A method of etching according to claim 1, further comprising a step of monitoring a depth of an etched part of the semiconductor layer structure by observing an intensity of a light beam reflected from the etched part.
Claim 8
Dependent Claim
21 words
A method of etching according to claim 1, wherein the semiconductor layer structure forms a part of a buried ridge structure.
Claim 9
Independent Claim
69 words
A method of etching an (Al,Ga)As/(Al,Ga,In)P semiconductor layer structure comprising a Al x Ga 1-x As layer (0≦x≦1) and a Al v Ga 1- (v+y) In y P layer (0≦v≦1, 0≦y≦1 and v+y≦1), comprising a plasma etching step for etching the (Al,Ga)As/(Al,Ga,In)P semiconductor layer structure using an SiCl 4 plasma contains at least one low atomic mass gas which is inert in the plasma during the plasma etching step.
Claim 10
Independent Claim
69 words
A method of etching an (Al,Ga)As/(Al,Ga,In)P semiconductor layer structure comprising a Al x Ga 1-x As layer (0≦x≦1) and a Al v Ga 1- (v+y) In y P layer (0≦v≦1, 0≦y≦1 and v+y≦1), comprising a plasma etching step for etching the (Al,Ga)As/(Al,Ga,In)P semiconductor layer structure using an SiCl 4 plasma contains at least one low atomic mass gas which is inert in the plasma during the plasma etching step.
Claim 11
Dependent Claim
23 words
A method of etching according to claim 8, wherein the at least one low atomic mass gas is selected from He and Ne.
Claim 12
Dependent Claim
27 words
A method of etching according to claim 8, wherein the plasma etching step is performed at a pressure of substantially about 1.33×10 -1 Pa (about 1 mTorr).
Claim 13
Dependent Claim
17 words
A method of etching according to claim 8, wherein the SiCl 4 plasma is free of Ar.
Claim 14
Dependent Claim
19 words
A method of etching according to claim 8, wherein the SiCl 4 plasma is free of CH 4 .
Claim 15
Dependent Claim
24 words
A method of etching according to claim 8, wherein the plasma etching step is effected at a temperature of up to about 100° C.
Claim 16
Dependent Claim
18 words
A method of etching according to claim 13, wherein the temperature is not less than about -10° C.
Claim 17
Dependent Claim
29 words
A method of etching according to claim 14, wherein the plasma etching step is effected at a temperature in the range of about -5° C. to about 80° C.
Claim 18
Dependent Claim
23 words
A method of etching according to claim 15, wherein the temperature is in the range of about 50° C. to about 70° C.
Claim 19
Dependent Claim
15 words
A method of etching according to claim 16, wherein the temperature is about 60° C.
Claim 20
Dependent Claim
23 words
A method of etching according to claim 8, comprising a step of chemically etching the semiconductor layer structure after the plasma etching step.
Claim 21
Dependent Claim
38 words
A method of etching according to claim 8, further comprising a step of monitoring a depth of an etched part of the semiconductor layer structure by observing an intensity of a light beam reflected from the etched part.
Claim 22
Dependent Claim
21 words
A method of etching according to claim 8, wherein the semiconductor layer structure forms a part of a buried ridge structure.
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