US5885894A
Expired / Lapsed
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Method of planarizing an inter-layer dielectric layer
Assignee: United Microelectronics Corp
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Filing: 1997-06-25
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Granted: 1999-03-23
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Expires: 2017-06-25
Abstract
Abstract A method of planarizing an inter-layer dielectric layer includes using a high density plasma chemical vapor deposition method to deposit an undoped dielectric, which increases the polishing efficiency in a subsequent chemical-mechanical polishing operation, and eliminates the need for a high temperature densifying treatment for planarization. A chemical-mechanical polishing operation is used to planarize the inter-layer dielectric.
Inventors
- 👤 Jiunh-Yuan Wu
- 👤 Water Lur
- 👤 Shih-Wei Sun
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 13:11
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/66; H10P14/662; H10P14/6922; H10P14/6923; H10P95/00; H10P95/06; H10P95/062
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
106 words
A method of planarizing an inter-layer dielectric layer, including: providing a semiconductor substrate having a gate and a source/drain region formed thereabove; depositing an undoped silicate glass layer directly on the semiconductor substrate and over the gate and source/drain region using high density plasma chemical vapor deposition, so that the undoped silicate glass layer has a thickness over the source/drain region that is greater than a thickness of the gate, thereby forming only minor protrusions over the gate; planarizing the undoped silicate glass layer using chemical-mechanical polishing to remove the minor protrusions; and depositing a doped silicate glass layer directly on the undoped silicate glass layer.
Claim 2
Independent Claim
106 words
A method of planarizing an inter-layer dielectric layer, including: providing a semiconductor substrate having a gate and a source/drain region formed thereabove; depositing an undoped silicate glass layer directly on the semiconductor substrate and over the gate and source/drain region using high density plasma chemical vapor deposition, so that the undoped silicate glass layer has a thickness over the source/drain region that is greater than a thickness of the gate, thereby forming only minor protrusions over the gate; planarizing the undoped silicate glass layer using chemical-mechanical polishing to remove the minor protrusions; and depositing a doped silicate glass layer directly on the undoped silicate glass layer.
Claim 3
Dependent Claim
36 words
The method according to claim 1, wherein said depositing an undoped silicate glass layer includes depositing the undoped silicate glass layer to a thickness which is about 1000 Å greater than the thickness of the gate.
Claim 4
Dependent Claim
35 words
The method according to claim 1, wherein said depositing an undoped silicate glass layer includes performing the high density plasma chemical vapor deposition at an operating temperature between about 350° C. to about 450° C.
Claim 5
Dependent Claim
21 words
The method according to claim 1, wherein said planarizing the undoped silicate glass layer includes polishing for one minute or less.
Claim 6
Dependent Claim
27 words
The method according to claim 1, wherein said depositing a doped silicate glass layer includes forming the doped silicate glass layer using plasma enhanced chemical vapor deposition.
Claim 7
Dependent Claim
24 words
The method according to claim 1, wherein said depositing a doped silicate glass layer includes forming the doped silicate glass of a phosphosilicate glass.
Claim 8
Dependent Claim
23 words
The method according to claim 1, wherein said depositing a doped silicate glass layer includes forming the doped silicate glass of borophosphosilicate glass.
Claim 9
Independent Claim
118 words
A method of planarizing an inter-layer dielectric layer, including: forming a field effect transistor above a semiconductor substrate; depositing a metallic layer above the field effect transistor; depositing an undoped silicate glass layer directly on the semiconductor substrate and over the metallic layer using high density plasma chemical vapor deposition, so that the undoped silicate glass layer has a thickness over the semiconductor substrate in regions adjacent to the metallic layer that is greater than a thickness of the metallic layer, thereby forming only minor protrusions over the metallic layer; planarizing the undoped silicate glass layer using chemical-mechanical polishing to remove the minor protrusions; and depositing a doped silicate glass layer directly on the undoped silicate glass layer.
Claim 10
Independent Claim
118 words
A method of planarizing an inter-layer dielectric layer, including: forming a field effect transistor above a semiconductor substrate; depositing a metallic layer above the field effect transistor; depositing an undoped silicate glass layer directly on the semiconductor substrate and over the metallic layer using high density plasma chemical vapor deposition, so that the undoped silicate glass layer has a thickness over the semiconductor substrate in regions adjacent to the metallic layer that is greater than a thickness of the metallic layer, thereby forming only minor protrusions over the metallic layer; planarizing the undoped silicate glass layer using chemical-mechanical polishing to remove the minor protrusions; and depositing a doped silicate glass layer directly on the undoped silicate glass layer.
Claim 11
Dependent Claim
37 words
The method according to claim 8, wherein said depositing an undoped silicate glass layer includes depositing the undoped silicate glass layer to a thickness which is about 1000 Å greater than the thickness of the metallic layer.
Claim 12
Dependent Claim
34 words
The method according to claim 8, wherein said depositing an undoped silicate glass layer includes performing the density plasma chemical vapor deposition at an operating temperature between about 350° C. to about 450° C.
Claim 13
Dependent Claim
21 words
The method according to claim 8, wherein said planarizing the undoped silicate glass layer includes polishing for one minute or less.
Claim 14
Dependent Claim
27 words
The method according to claim 8, wherein said depositing a doped silicate glass layer includes forming the doped silicate glass layer using plasma enhanced chemical vapor deposition.
References Cited (Backward Citations)
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| 7.5 Years (Year 8) | 2006-03-22 | 2006-09-21 | 2007-03-23 | $3760.00 | Window Closed / Lapsed |
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