Patent US5885750A successfully refreshed from Google Patents.
US5885750A
Expired / Lapsed
US
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Tantalum adhesion layer and reactive-ion-etch process for providing a thin film metallization area
Assignee: International Business Machines Corp
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Filing: 1997-10-02
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Granted: 1999-03-23
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Expires: 2017-10-02
Abstract
Abstract A method for providing a thin film metallization area on a substrate is disclosed comprising the steps of: depositing a Ta adhesion layer on the surface of the substrate seed layer, conducting a photo resist process on the Ta adhesion layer to define the thin film metallization area, including a remnant removal process to remove remnant photo resist process material in the thin film metallization area to the Ta adhesion layer, the Ta adhesion layer preventing the remnant removal from reaching the seed layer, conducting a Ta removal reactive-ion-etch process to remove the Ta adhesion layer in the thin film metallization area, so that the seed layer is exposed in the metallization area. A metal material may then be deposited in the metallization area.
Inventors
- 👤 Richard Hsiao
- 👤 Neil Leslie Robertson
- 👤 Hugo Alberto Emilio Santini
- 👤 Clinton David Snyder
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:55
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/085; H; H10; H10D; H10D84/00; H10D84/01; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/063
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
140 words
A method for preparing at least one thin film metallization area for metallization on a substrate having a seed layer, comprising the steps of: depositing a Ta adhesion layer on the surface of said seed layer of said substrate; conducting a photo resist process on said Ta adhesion layer to define said thin film metallization area; conducting a reactive-ion-etch process to remove remnant photo resist process material from said photo resist process step in said thin film metallization area, producing walls to said Ta adhesion layer to produce a well defined said thin film metallization area, said Ta adhesion layer preventing said reactive-ion-etch process from interacting with said seed layer; and conducting a Ta removal reactive-ion-etch process to remove said Ta adhesion layer in said thin film metallization area, so that said seed layer is exposed in said metallization area.
Claim 2
Independent Claim
140 words
A method for preparing at least one thin film metallization area for metallization on a substrate having a seed layer, comprising the steps of: depositing a Ta adhesion layer on the surface of said seed layer of said substrate; conducting a photo resist process on said Ta adhesion layer to define said thin film metallization area; conducting a reactive-ion-etch process to remove remnant photo resist process material from said photo resist process step in said thin film metallization area, producing walls to said Ta adhesion layer to produce a well defined said thin film metallization area, said Ta adhesion layer preventing said reactive-ion-etch process from interacting with said seed layer; and conducting a Ta removal reactive-ion-etch process to remove said Ta adhesion layer in said thin film metallization area, so that said seed layer is exposed in said metallization area.
Claim 3
Dependent Claim
51 words
The method for preparing at least one thin film metallization area of claim 1, wherein said step of conducting a reactive-ion-etch process to remove remnant photo resist process material comprises an O 2 reactive-ion-etch process, and said Ta adhesion layer prevents said O 2 reactive-ion-etch process from oxidizing said seed layer.
Claim 4
Dependent Claim
25 words
The method for preparing at least one thin film metallization area of claim 2, wherein said Ta removal reactive-ion-etch process comprises an F reactive-ion-etch process.
Claim 5
Dependent Claim
24 words
The method for preparing at least one thin film metallization area of claim 3, wherein said metallization area is a high aspect ratio trench.
Claim 6
Dependent Claim
30 words
The method for preparing at least one thin film metallization area of claim 4, wherein said Ta adhesion layer depositing step comprises RF sputtering or ion beam deposition of Ta.
Claim 7
Dependent Claim
38 words
The method for preparing at least one thin film metallization area of claim 5, additionally comprising the step of: subsequent to said Ta removal reactive-ion-etch step, applying a hydrogen-containing plasma treatment to condition said seed layer for plating.
Claim 8
Independent Claim
146 words
A method for providing at least one thin film metal structure on a substrate having a seed layer comprising the steps of: depositing a Ta adhesion layer on the surface of said seed layer of said substrate; conducting a photo resist process on said Ta adhesion layer to define a thin film metallization area; conducting a reactive-ion-etch process to remove remnant photo resist process material from said photo resist process step in said thin film metallization area, producing walls to said Ta adhesion layer to produce a well defined said thin film metallization area, said Ta adhesion layer preventing said reactive-ion-etch process from interacting with said seed layer; conducting a Ta removal reactive-ion-etch process to remove said Ta adhesion layer in said thin film metallization area, so that said seed layer is exposed in said metallization area; and depositing a metal material in said metallization area.
Claim 9
Independent Claim
146 words
A method for providing at least one thin film metal structure on a substrate having a seed layer comprising the steps of: depositing a Ta adhesion layer on the surface of said seed layer of said substrate; conducting a photo resist process on said Ta adhesion layer to define a thin film metallization area; conducting a reactive-ion-etch process to remove remnant photo resist process material from said photo resist process step in said thin film metallization area, producing walls to said Ta adhesion layer to produce a well defined said thin film metallization area, said Ta adhesion layer preventing said reactive-ion-etch process from interacting with said seed layer; conducting a Ta removal reactive-ion-etch process to remove said Ta adhesion layer in said thin film metallization area, so that said seed layer is exposed in said metallization area; and depositing a metal material in said metallization area.
Claim 10
Dependent Claim
34 words
The method for providing at least one thin film metal structure of claim 7, wherein said step of depositing a metal material in said metallization area comprises plating a metal in said metallization area.
Claim 11
Dependent Claim
35 words
The method for providing at least one thin film metal structure of claim 8, wherein said metal plated in said step of depositing a metal material in said metallization area comprises Cu, Ni--Fe or Au.
Claim 12
Dependent Claim
39 words
The method for providing at least one thin film metal structure of claim 9, wherein said metal plated in said step of depositing a metal material in said metallization area comprises Cu for a magnetic thin film transducer coil.
Claim 13
Dependent Claim
40 words
The method for providing at least one thin film metal structure of claim 9, wherein said metal plated in said step of depositing a metal material in said metallization area comprises Ni--Fe for a magnetic thin film transducer pole piece.
Claim 14
Dependent Claim
51 words
The method for providing at least one thin film metal structure of claim 7, wherein said step of conducting a reactive-ion-etch process to remove remnant photo resist process material comprises an O 2 reactive-ion-etch process, and said Ta adhesion layer prevents said O 2 reactive-ion-etch process from oxidizing said seed layer.
Claim 15
Dependent Claim
25 words
The method for providing at least one thin film metal structure of claim 12, wherein said Ta removal reactive-ion-etch process comprises an F reactive-ion-etch process.
Claim 16
Dependent Claim
24 words
The method for providing at least one thin film metal structure of claim 13, wherein said metal structure is a high aspect ratio trench.
Claim 17
Dependent Claim
30 words
The method for providing at least one thin film metal structure of claim 14, wherein said Ta adhesion layer depositing step comprises RF sputtering or ion beam deposition of Ta.
Claim 18
Dependent Claim
38 words
The method for providing at least one thin film metal structure of claim 15, additionally comprising the step of: subsequent to said Ta removal reactive-ion-etch step, applying a hydrogen-containing plasma treatment to condition said seed layer for plating.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2002-03-22 | 2002-09-21 | 2003-03-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-03-22 | 2006-09-21 | 2007-03-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-03-22 | 2010-09-21 | 2011-03-23 | $7700.00 | Window Closed / Lapsed |