Patent US5879993A successfully refreshed from Google Patents.
US5879993A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Nitride spacer technology for flash EPROM
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
•
Filing: 1997-09-29
•
Granted: 1999-03-09
•
Expires: 2017-09-29
Abstract
Abstract A method of forming a spacer structure adjacent to the sidewall of a floating gate electrode with a top surface and sidewalls, the floating gate electrode being formed on a silicon oxide dielectric layer, and the silicon oxide dielectric layer being formed on the top surface of a semiconductor substrate include the following steps. Form a cap layer on the floating gate electrode, and a blanket tunnel oxide on the device. Form an inner dielectric, spacer layer over the device including the cap layer and the sidewalls thereby with conforming sidewalls, and an outer dielectric, spacer layer over the inner dielectric, spacer layer including the conforming sidewalls. Partially etch away the outer dielectric, spacer layer with a dry etch to form a outer dielectric spacer adjacent to the conforming sidewalls. Then partially etch away more of the outer dielectric, spacer layer with a wet etch to expose a portion of the conforming sidewalls of the inner dielectric, spacer layer. Finally, etch away the portion of the inner dielectric, spacer layer unprotected by the outer dielectric spacer before forming interelectrode dielectric layers and the control gate electrode.
Inventors
- 👤 Wen-Cheng Chien
- 👤 Hui-Jen Chu
- 👤 Chen-Peng Fan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 08:57
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0411; H10D30/60; H10D30/68; H10D30/6891
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
229 words
A method of forming a spacer structure adjacent to the sidewall of a floating gate electrode with a top surface and sidewalls, said floating gate electrode being formed on a silicon oxide dielectric layer, and said silicon oxide dielectric layer being formed on the top surface of a semiconductor substrate, the steps of said method comprising: a) forming a cap layer of an oxide of said floating gate electrode over the top surface of said floating gate electrode, b) forming a inner, silicon nitride, dielectric, spacer layer over said floating gate electrode and cap layer including said cap layer and said sidewalls thereby forming conforming sidewalls adjacent to said sidewalls, c) forming a outer, silicon oxide, dielectric, spacer layer over said inner dielectric, spacer layer including said conforming sidewalls, said outer spacer layer having a top spacer surface, d) partially etching away said outer, silicon oxide, dielectric, spacer layer to form an outer dielectric spacer adjacent to said conforming sidewalls lowering said top spacer surface of said outer spacer layer to a position located substantially below the top of said floating gate electrode, and e) etching away from an upper portion of said sidewalls above said top spacer surface the portion of said inner, silicon nitride, dielectric, spacer layer unprotected by said outer, silicon oxide, dielectric spacer providing an L-shaped silicon nitride spacer covered by said outer dielectric spacer.
Claim 2
Independent Claim
229 words
A method of forming a spacer structure adjacent to the sidewall of a floating gate electrode with a top surface and sidewalls, said floating gate electrode being formed on a silicon oxide dielectric layer, and said silicon oxide dielectric layer being formed on the top surface of a semiconductor substrate, the steps of said method comprising: a) forming a cap layer of an oxide of said floating gate electrode over the top surface of said floating gate electrode, b) forming a inner, silicon nitride, dielectric, spacer layer over said floating gate electrode and cap layer including said cap layer and said sidewalls thereby forming conforming sidewalls adjacent to said sidewalls, c) forming a outer, silicon oxide, dielectric, spacer layer over said inner dielectric, spacer layer including said conforming sidewalls, said outer spacer layer having a top spacer surface, d) partially etching away said outer, silicon oxide, dielectric, spacer layer to form an outer dielectric spacer adjacent to said conforming sidewalls lowering said top spacer surface of said outer spacer layer to a position located substantially below the top of said floating gate electrode, and e) etching away from an upper portion of said sidewalls above said top spacer surface the portion of said inner, silicon nitride, dielectric, spacer layer unprotected by said outer, silicon oxide, dielectric spacer providing an L-shaped silicon nitride spacer covered by said outer dielectric spacer.
Claim 3
Dependent Claim
64 words
A method of forming a spacer structure adjacent to the sidewall of a floating gate electrode in accordance with claim 1 wherein: after step (d) and before step (e) performing the step of partially etching said outer, silicon oxide, dielectric, spacer layer further to expose a portion of said conforming sidewalls of said inner, silicon nitride, dielectric, spacer layer above said top spacer surface.
Claim 4
Dependent Claim
74 words
A method of forming a spacer structure adjacent to the sidewall of a floating gate electrode in accordance with claim 1 wherein: a dry etching process is used in step (d), and the additional step is performed after step (d) and before step (e) of partially etching said outer, silicon oxide, dielectric, spacer layer with a wet etch to expose a portion of said conforming sidewalls of said inner, silicon nitride, dielectric, spacer layer.
Claim 5
Dependent Claim
32 words
A method of forming a spacer structure adjacent to the sidewall of a floating gate electrode in accordance with claim 1 wherein said cap layer has a thickness of about 100 Å.
Claim 6
Dependent Claim
40 words
A method of forming a spacer structure adjacent to the sidewall of a floating gate electrode in accordance with claim 1 wherein said inner, silicon nitride, dielectric, spacer layer has a thickness of about 140 Å to about 180 Å.
Claim 7
Dependent Claim
51 words
A method of forming a spacer structure adjacent to the sidewall of a floating gate electrode in accordance with claim 1 wherein: said cap layer has a thickness of about 100 Å, and said inner, silicon nitride, dielectric, spacer layer has a thickness of about 140 Å to about 180 Å.
Claim 8
Dependent Claim
69 words
A method of forming a spacer structure adjacent to the sidewall of a floating gate electrode in accordance with claim 1 wherein: said cap layer has a thickness of about 100 Å, said inner, silicon nitride, dielectric, spacer layer comprises a silicon nitride layer having a thickness of about 140 Å to about 180 Å, and said outer, silicon oxide, dielectric, spacer layer comprises a thick silicon oxide layer.
Claim 9
Dependent Claim
165 words
A method of forming a spacer structure adjacent to the sidewall of a floating gate electrode in accordance with claim 1 wherein: said inner, silicon nitride, dielectric, spacer layer comprises a silicon nitride layer having a thickness of about 140 Å to about 180 Å, said outer, silicon oxide, dielectric, spacer layer comprises a thick layer wherein said step (d) is performed by a dry etching process to partially etch away said outer, silicon oxide, dielectric, spacer layer to form a outer, silicon oxide, dielectric spacer adjacent to said conforming sidewalls, the step (e) of etching away the portion of said inner, silicon nitride, dielectric, spacer layer unprotected by said outer, silicon oxide, dielectric spacer is performed in a wet etching process, and the additional step is performed after step (d) and before step (e) of partially etching said outer, silicon nitride, dielectric, spacer layer with a wet etch to expose a portion of said conforming sidewalls of said inner, silicon oxide, dielectric, spacer layer.
Claim 10
Dependent Claim
177 words
A method of forming a spacer structure adjacent to the sidewall of a floating gate electrode in accordance with claim 1 wherein: said inner dielectric, spacer layer comprises a silicon nitride layer having a thickness of about 140 Å to about 180 Å, said outer dielectric, spacer layer comprises a thick silicon oxide layer wherein said step (d) of partially etching away said outer dielectric, spacer layer to form a outer dielectric spacer adjacent to said conforming sidewalls is performed by a dry etching process, the additional step is performed after step (d) and before step (e) of partially etching said outer dielectric, spacer layer with a wet etch to expose a portion of said conforming sidewalls of said inner dielectric, spacer layer with a hydrofluoric acid solution of about 50 H 2 O : 1 HF, and the step (e) of etching away the portion of said inner dielectric, spacer layer unprotected by said outer dielectric spacer is performed in a wet etching process using a wet hot phosphoric acid solution (H 3 PO 4 ).
Claim 11
Independent Claim
237 words
A method of forming a spacer structure adjacent to the sidewall of a floating gate electrode composed of doped polysilicon with a top surface and sidewalls, said floating gate electrode being formed on a silicon oxide dielectric layer, and said silicon oxide dielectric layer being formed on the top surface of a semiconductor substrate, the steps of said method comprising steps performed in the sequence, as follows: a) forming a cap layer of polysilicon oxide over the top surface of said floating gate electrode followed by forming a thin, blanket, tunnel oxide film over said device, b) forming a inner dielectric, spacer layer over said floating gate electrode and cap layer including said cap and said tunnel oxide layer and adjacent to said sidewalls of said floating gate electrode thereby forming conforming sidewall spacers adjacent to said sidewalls of said floating gate electrode, c) forming a outer dielectric, spacer layer over said inner dielectric, spacer layer including said conforming sidewalls, d) partially etching away said outer dielectric, spacer layer with a dry etch to form a outer dielectric spacer adjacent to said conforming sidewalls, e) the additional step is performed of partially etching away more of said outer dielectric, spacer layer with a wet etch to expose a portion of said conforming sidewalls of said inner dielectric, spacer layer, and f) etching away the portion of said inner dielectric, spacer layer unprotected by said outer dielectric spacer.
Claim 12
Independent Claim
237 words
A method of forming a spacer structure adjacent to the sidewall of a floating gate electrode composed of doped polysilicon with a top surface and sidewalls, said floating gate electrode being formed on a silicon oxide dielectric layer, and said silicon oxide dielectric layer being formed on the top surface of a semiconductor substrate, the steps of said method comprising steps performed in the sequence, as follows: a) forming a cap layer of polysilicon oxide over the top surface of said floating gate electrode followed by forming a thin, blanket, tunnel oxide film over said device, b) forming a inner dielectric, spacer layer over said floating gate electrode and cap layer including said cap and said tunnel oxide layer and adjacent to said sidewalls of said floating gate electrode thereby forming conforming sidewall spacers adjacent to said sidewalls of said floating gate electrode, c) forming a outer dielectric, spacer layer over said inner dielectric, spacer layer including said conforming sidewalls, d) partially etching away said outer dielectric, spacer layer with a dry etch to form a outer dielectric spacer adjacent to said conforming sidewalls, e) the additional step is performed of partially etching away more of said outer dielectric, spacer layer with a wet etch to expose a portion of said conforming sidewalls of said inner dielectric, spacer layer, and f) etching away the portion of said inner dielectric, spacer layer unprotected by said outer dielectric spacer.
Claim 13
Dependent Claim
32 words
A method of forming a spacer structure adjacent to the sidewall of a floating gate electrode in accordance with claim 10 wherein said cap layer has a thickness of about 100 Å.
Claim 14
Dependent Claim
38 words
A method of forming a spacer structure adjacent to the sidewall of a floating gate electrode in accordance with claim 10 wherein said inner dielectric, spacer layer has a thickness of about 140 Å to about 180 Å.
Claim 15
Dependent Claim
53 words
A method of forming a spacer structure adjacent to the sidewall of a floating gate electrode in accordance with claim 10 wherein: said cap layer has a thickness of about 100 Å, and said inner dielectric, spacer layer comprises silicon nitride and has a thickness of about 140 Å to about 180 Å.
Claim 16
Dependent Claim
65 words
A method of forming a spacer structure adjacent to the sidewall of a floating gate electrode in accordance with claim 10 wherein: said cap layer has a thickness of about 100 Å, said inner dielectric, spacer layer comprises a silicon nitride layer having a thickness of about 140 Å to about 180 Å, and said outer dielectric, spacer layer comprises a thick silicon oxide layer.
Claim 17
Dependent Claim
122 words
A method of forming a spacer structure adjacent to the sidewall of a floating gate electrode in accordance with claim 10 wherein: said inner dielectric, spacer layer comprises a silicon nitride layer having a thickness of about 140 Å to about 180 Å, said outer dielectric, spacer layer comprises a thick silicon oxide layer, said wet etch of of step (e) is performed with a hydrofluoric acid solution of about 50 H 2 O : 1 HF, the step (f) is performed in a wet etching process using a hot phosphoric acid solution (H 3 PO 4 ), forming an interelectrode dielectric layer over said device, and forming a control gate electrode over said interelectrode dielectric layer to form a memory cell.
Claim 18
Independent Claim
261 words
A method of forming a spacer structure adjacent to the sidewall of a floating gate electrode with a top surface and sidewalls, said floating gate electrode being formed on a silicon oxide dielectric layer, and said silicon oxide dielectric layer being formed on the top surface of a semiconductor substrate, the steps of said method comprising: a) forming a cap layer of an oxide of said floating gate electrode over the top surface of said floating gate electrode, b) forming a inner, silicon nitride, dielectric, spacer layer over said floating gate electrode and cap layer including said cap layer and said sidewalls thereby forming conforming sidewalls adjacent to said sidewalls, with a thickness from about 140 Å to about 180 Å, c) forming a outer, silicon oxide, dielectric, spacer layer over said inner dielectric, spacer layer including said conforming sidewalls, said outer spacer layer having a top surface, d) partially etching away said outer, silicon oxide, dielectric, spacer layer to form an outer dielectric spacer adjacent to said conforming sidewalls lowering said top surface of said outer spacer layer to a position located substantially below the top of said floating gate electrode, said outer spacer having dimensions from about 150 Å to about 300 Å, and e) etching away from an upper portion of said sidewalls the portion of said inner, silicon nitride, dielectric, spacer layer unprotected by said outer, silicon oxide, dielectric spacer, providing an L-shaped silicon nitride spacer covered by said outer dielectric spacer with a height of about 300 Å vertically and a width of 200 Å horizontally.
Claim 19
Independent Claim
261 words
A method of forming a spacer structure adjacent to the sidewall of a floating gate electrode with a top surface and sidewalls, said floating gate electrode being formed on a silicon oxide dielectric layer, and said silicon oxide dielectric layer being formed on the top surface of a semiconductor substrate, the steps of said method comprising: a) forming a cap layer of an oxide of said floating gate electrode over the top surface of said floating gate electrode, b) forming a inner, silicon nitride, dielectric, spacer layer over said floating gate electrode and cap layer including said cap layer and said sidewalls thereby forming conforming sidewalls adjacent to said sidewalls, with a thickness from about 140 Å to about 180 Å, c) forming a outer, silicon oxide, dielectric, spacer layer over said inner dielectric, spacer layer including said conforming sidewalls, said outer spacer layer having a top surface, d) partially etching away said outer, silicon oxide, dielectric, spacer layer to form an outer dielectric spacer adjacent to said conforming sidewalls lowering said top surface of said outer spacer layer to a position located substantially below the top of said floating gate electrode, said outer spacer having dimensions from about 150 Å to about 300 Å, and e) etching away from an upper portion of said sidewalls the portion of said inner, silicon nitride, dielectric, spacer layer unprotected by said outer, silicon oxide, dielectric spacer, providing an L-shaped silicon nitride spacer covered by said outer dielectric spacer with a height of about 300 Å vertically and a width of 200 Å horizontally.
Claim 20
Dependent Claim
45 words
A method of forming a spacer structure adjacent to the sidewall of a floating gate electrode in accordance with claim 16 wherein: in step (a) after forming said cap layer, but before performing step (b), forming a thin, blanket, tunnel oxide film over said device.
Claim 21
Dependent Claim
74 words
A method of forming a spacer structure adjacent to the sidewall of a floating gate electrode in accordance with claim 16 wherein: a dry etching process is used in step (d), and the additional step is performed after step (d) and before step (e) of partially etching said outer, silicon oxide, dielectric, spacer layer with a wet etch to expose a portion of said conforming sidewalls of said inner, silicon nitride, dielectric, spacer layer.
Claim 22
Dependent Claim
89 words
A method of forming a spacer structure adjacent to the sidewall of a floating gate electrode in accordance with claim 16 wherein: said wet etch of of step (e) is performed with a hydrofluoric acid solution of about 50 H 2 O :1 HF, the step (f) is performed in a wet etching process using a hot phosphoric acid solution (H 3 PO 4 ), forming an interelectrode dielectric layer over said device, and forming a control gate electrode over said interelectrode dielectric layer to form a memory cell.
Claim 23
Dependent Claim
126 words
A method of forming a spacer structure adjacent to the sidewall of a floating gate electrode in accordance with claim 16 wherein: using a dry etching process in step (d), and performing a step after step (d) and before step (e) of partially etching said outer, silicon oxide, dielectric, spacer layer with a wet etch with a hydrofluoric acid solution of about 50 H 2 O:1 HF, to expose a portion of said conforming sidewalls of said inner, silicon nitride, dielectric, spacer layer, performing step (f) in a wet etching process using a hot phosphoric acid solution (H 3 PO 4 ), forming an interelectrode dielectric layer over said device, and forming a control gate electrode over said interelectrode dielectric layer to form a memory cell.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-03-08 | 2002-09-07 | 2003-03-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-03-08 | 2006-09-07 | 2007-03-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-03-08 | 2010-09-07 | 2011-03-09 | $7700.00 | Window Closed / Lapsed |