US5879975A
Expired / Lapsed
US
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Heat treating nitrogen implanted gate electrode layer for improved gate electrode etch profile
Assignee: Advanced Micro Devices Inc
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Filing: 1997-09-05
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Granted: 1999-03-09
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Expires: 2017-09-05
Abstract
Abstract The etch profile of side surfaces of a gate electrode is improved by heat treating the gate electrode layer after nitrogen implantation and before etching to form the gate electrode. Nitrogen implantation at high dosages to prevent subsequent impurity penetration through the gate dielectric layer, e.g., B penetration, amorphizes the upper portion of the gate electrode layer resulting in concave side surfaces upon etching to form the gate electrode. Heat treatment performed after nitrogen implantation can restore sufficient crystallinity so that, after etching the gate electrode layer, the side surfaces of the resulting gate electrode are substantially parallel.
Inventors
- 👤 Olov Karlsson
- 👤 Effiong Ibok
- 👤 Dong-Hyuk Ju
- 👤 Scott A. Bell
- 👤 Daniel A. Steckert
- 👤 Robert Ogle
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 18:40
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
99 words
A method of manufacturing a semiconductor device, which method comprises: forming a polycrystalline silicon layer on an upper surface of a semiconductor substrate with a dielectric layer therebetween; implanting nitrogen atoms into the polycrystalline silicon layer at a dosage sufficient to amorphize an upper portion of the polycrystalline silicon layer; heat treating said nitrogen implanted polycrystalline silicon layer under conditions sufficient to restore crystallinity to the amorphized upper portion of the polycrystalline silicon layer; and etching the heat treated nitrogen implanted layer to form a gate electrode, wherein said heat treating improves the etch profile of the gate electrode.
Claim 2
Independent Claim
99 words
A method of manufacturing a semiconductor device, which method comprises: forming a polycrystalline silicon layer on an upper surface of a semiconductor substrate with a dielectric layer therebetween; implanting nitrogen atoms into the polycrystalline silicon layer at a dosage sufficient to amorphize an upper portion of the polycrystalline silicon layer; heat treating said nitrogen implanted polycrystalline silicon layer under conditions sufficient to restore crystallinity to the amorphized upper portion of the polycrystalline silicon layer; and etching the heat treated nitrogen implanted layer to form a gate electrode, wherein said heat treating improves the etch profile of the gate electrode.
Claim 3
Dependent Claim
38 words
The method according to claim 1, comprising implanting nitrogen at a dosage sufficient to amorphize the upper portion extending up to about 50% of the polycrystalline silicon gate electrode layer toward the upper surface of the semiconductor substrate.
Claim 4
Dependent Claim
22 words
The method according to claim 1, comprising: etching the polycrystalline silicon layer to form a gate electrode having substantially parallel side surfaces.
Claim 5
Dependent Claim
30 words
The method according to claim 3, comprising etching the polycrystalline silicon layer to form a gate electrode having side surfaces substantially perpendicular to the upper surface of the semiconductor substrate.
Claim 6
Dependent Claim
26 words
The method according to claim 3, comprising heat treating the nitrogen implanted polycrystalline silicon layer at a temperature of about 600° C. to about 1,000° C.
Claim 7
Dependent Claim
37 words
The method according to claim 5, comprising heat treating the nitrogen implanted polycrystalline silicon layer at a temperature of about 850° C. for about 30 seconds in an atmosphere comprising nitrogen and about 10 volume percent oxygen.
Claim 8
Dependent Claim
30 words
The method according to claim 5, comprising heat treating the nitrogen implanted polycrystalline silicon layer at a temperature of about 750° C. for about 30 minutes in a nitrogen atmosphere.
Claim 9
Dependent Claim
35 words
The method according to claim 1, further comprising: forming a mask on the nitrogen implanted polycrystalline silicon layer after heat treating; and etching the heat treated masked polycrystalline silicon layer to form the gate electrode.
Claim 10
Dependent Claim
14 words
The method according to claim 1, wherein the semiconductor substrate comprises an N-type impurity.
Claim 11
Dependent Claim
29 words
The method according to claim 9, further comprising forming P-impurity type source/drain regions in the semiconductor substrate on opposite sides of the gate electrode to form a P-channel MOS.
Claim 12
Dependent Claim
67 words
The method according to claim 1, comprising: implanting nitrogen under conditions sufficient to amorphize an upper portion of the polycrystalline silicon layer; heat treating to restore sufficient crystallinity to the amorphized upper portion to enable formation of a gate electrode having substantially parallel side surfaces upon etching the polycrystalline silicon film; and etching the polycrystalline silicon film to form a gate electrode having substantially parallel side surfaces.
Claim 13
Dependent Claim
32 words
The method according to claim 11, comprising etching the heat treated polycrystalline silicon film to form a gate electrode having side surfaces substantially perpendicular to the upper surface of the semiconductor substrate.
Claim 14
Dependent Claim
18 words
The method according to claim 1, wherein the dielectric layer has a thickness less than about 60 Å.
Claim 15
Dependent Claim
20 words
The method according to claim 1, comprising heat treating the nitrogen implanted polycrystalline silicon layer before depositing any layer thereon.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2002-03-08 | 2002-09-07 | 2003-03-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-03-08 | 2006-09-07 | 2007-03-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-03-08 | 2010-09-07 | 2011-03-09 | $7700.00 | Window Closed / Lapsed |