US4351695A
Expired / Lapsed
US
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Method of producing low-resistant, monocrystalline metallic layers by implanting ions into a polycrystalline metal layer and heating to produce a monocrystalline layer
Assignee: Siemens AG
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Filing: 1981-01-02
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Granted: 1982-09-28
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Expires: 2001-01-02
Abstract
Abstract Monocrystalline metal layers having a low specific electrical resistance (ρ<15μΩ cm) are produced by depositing a layer of a select metal or alloy in its polycrystalline state onto a substrate useful in semiconductor and thin film technologies, such as composed of glass, ceramic or silicon; substantially simultaneously with the deposition or thereafter, implanting ions which are inert relative to the metal or alloy so as to generate crystal lattice disruptions in the deposited layer and thereafter heating the so-coated substrate so as to convert the polycrystalline layer into its monocrystalline state. The principles of the invention are particularly applicable for the production of lead structures in micro-electronics.
Inventors
- 👤 Konrad Hieber
- 👤 Norbert Mayer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 13:57
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/065; C; C30; C30B; C30B1/00; C30B1/02; C30B29/00; C30B29/02; C30B29/10; C30B29/52; H10P; H10P95/00; H10W70/00; H10W70/01; H10W70/05; Y; Y10; Y10S; Y10S117/00; Y10S117/905
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
109 words
A method of producing monocrystalline metal layers having a low specific electrical resistance on substrates as are particularly useful in semiconductor and thin film technologies, comprising: depositing a polycrystalline layer of a select metal onto a substrate; implanting ions into such layer which are relatively inert to said metal so as to generate crystal lattice disruption in said metal layer; and heating said substrate to a temperature in the range of about room temperature up to a maximum of about 350° C. so as to convert the resultant greatly disrupted polycrystalline metal layer into its monocrystalline state with a mean grain diameter greater than 100 times the layer thickness.
Claim 2
Independent Claim
109 words
A method of producing monocrystalline metal layers having a low specific electrical resistance on substrates as are particularly useful in semiconductor and thin film technologies, comprising: depositing a polycrystalline layer of a select metal onto a substrate; implanting ions into such layer which are relatively inert to said metal so as to generate crystal lattice disruption in said metal layer; and heating said substrate to a temperature in the range of about room temperature up to a maximum of about 350° C. so as to convert the resultant greatly disrupted polycrystalline metal layer into its monocrystalline state with a mean grain diameter greater than 100 times the layer thickness.
Claim 3
Dependent Claim
23 words
A method as defined in claim 1 wherein said deposition of the polycrystalline metal layer and said implantation of ions occurs substantially simultaneously.
Claim 4
Dependent Claim
22 words
A method as defined in claim 1 wherein said implantation of ions occurs subsequent to said deposition of the polycrystalline metal layer.
Claim 5
Dependent Claim
26 words
A method as defined in claim 1 wherein said substrate is maintained at a temperature below about -90° C. during deposition of said polycrystalline metal layer.
Claim 6
Dependent Claim
27 words
A method as defined in claim 1 wherein said implantation ions are composed of atoms selected from the group consisting of nitrogen, hydrogen and inert gas atoms.
Claim 7
Dependent Claim
23 words
A method as defined in claim 1 wherein said select metal material is chromium and said implantation ions are composed of nitrogen atoms.
Claim 8
Dependent Claim
22 words
A method as defined in claim 1 wherein said select metal is tantalum and said implantation ions are composed of argon atoms.
Claim 9
Dependent Claim
32 words
A method as defined in claim 1 wherein said select metal is an aluminum/copper alloy and said implantation ions are composed of atoms selected from the group consisting of argon and helium.
Claim 10
Dependent Claim
25 words
A method as defined in claim 1 wherein said deposition of the polycrystalline metal layer occurs with the aid of an electron beam vaporization means.
Claim 11
Dependent Claim
47 words
A method as defined in claim 1 wherein said deposition of the polycrystalline metal layer occurs via vapor deposition with a controlled vaporization rate set at about 0.5 nm through 5 nm and the deposited layer thickness is controlled to attain a thickness of about 3 μm.
Claim 12
Dependent Claim
55 words
A method as defined in claim 1 wherein said implantation of ions occurs at an energy level of about 5 keV through 70 keV and at a dose of about 10 13 to 10 16 ions cm -2 sec -1 , when said implantation occurs substantially simultaneously with the deposition of the polycrystalline metal layer.
Claim 13
Dependent Claim
52 words
A method as defined in claim 1 wherein said implantation of ions occurs at an energy level of about 1 through 5 MeV and at a dose of about 10 16 through 10 19 cm -2 sec -1 , when said implantation occurs subsequent to the deposition of the polycrystalline metal layer.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-09-27 | 1986-03-29 | 1986-09-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-09-27 | 1990-03-29 | 1990-09-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-09-27 | 1994-03-29 | 1994-09-28 | $7700.00 | Window Closed / Lapsed |