Abstract A semiconductor device in which mutual diffusion of doped impurities occurring through an upper silicide electrode layer is prevented. A silicide electrode layer is doped with both the same degree of p-type impurities as the concentration of p-type impurities of the lower gate electrode layer and the same degree of n-type impurities as the concentration of n-type impurities. As a result, the concentration of doped impurities of the gate electrode layer is balanced at the two sides of the interface of the pMOS side and nMOS side. Therefore, heat diffusion caused by subsequent heat treatment is prevented and the problem of mutual diffusion can be solved. The present invention is also suitable for the SALICIDE process. Even when the silicide electrode layer is formed simultaneously on an extremely shallow source or drain region, since the concentration of the impurities of the silicide electrode layer was initially high, the lower impurities will not be drained so the contact resistance will not be made to deteriorate. As a result, it becomes easy for the SALICIDE process to be applied to submicron devices. In the method of production of the present invention, the silicide electrode layer is formed by the CVD method or the sputtering method and the impurities doped during this process, so no special step has to be provided for introducing the impurities.
A CMOS semiconductor device having a dual-gate electrode construction, comprising: a p-channel MOS transistor having a p-type gate electrode; and an n-channel MOS transistor having an n-type gate electrode formed adjacent to the p-channel MOS transistor, the p-type gate electrode and the n-type gate electrode each having a dual-gate electrode construction including a lower gate electrode layer with p-type or n-type impurities doped separately for the different channel conductivity type transistor regions and an upper common silicide electrode layer, and the upper silicide electrode layer being doped with both the same degree of p-type impurities as the concentration of p-type impurities of the lower gate electrode layer and the same degree of n-type impurities as the concentration of n-type impurities of the lower gate electrode layer.
Claim 2
Dependent Claim
126 words
A CMOS semiconductor device having a dual-gate electrode construction, comprising: a p-channel MOS transistor having a p-type gate electrode; and an n-channel MOS transistor having an n-type gate electrode formed adjacent to the p-channel MOS transistor, the p-type gate electrode and the n-type gate electrode each having a dual-gate electrode construction including a lower gate electrode layer with p-type or n-type impurities doped separately for the different channel conductivity type transistor regions and an upper common silicide electrode layer, and the upper silicide electrode layer being doped with both the same degree of p-type impurities as the concentration of p-type impurities of the lower gate electrode layer and the same degree of n-type impurities as the concentration of n-type impurities of the lower gate electrode layer.
Claim 3
Dependent Claim
53 words
A CMOS semiconductor device having a dual-gate electrode construction as set forth in claim 1, wherein the silicide electrode layer is formed not only over the gate electrode layer, but also over the source and drain impurity diffusion regions formed on the surface of the semiconductor substrate near to the gate electrode layer.
Claim 4
Dependent Claim
40 words
A CMOS semiconductor device having a dual-gate electrode construction as set forth in claim 1, wherein the silicide electrode layer is comprised of a material selected from the group comprised of tungsten silicide, titanium silicide, cobalt silicide, and nickel silicide.
Claim 5
Dependent Claim
52 words
A CMOS semiconductor device having a dual-gate electrode construction as set forth in claim 1, wherein the dual-gate electrode construction comprised of the lower gate electrode layer with p-type or n-type impurities doped separately for the different channel conductivity type transistor regions and an upper common silicide layer is formed by self-alignment.