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US5874355A
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Method to prevent volcane effect in tungsten plug deposition
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1997-06-12
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Granted: 1999-02-23
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Expires: 2017-06-12
Abstract
Abstract A method to prevent volcano effect in tungsten plug deposition is described. The method is applied to both the contact plugs as well as the via plugs. For these purposes, the use of a nitrogen (N 2 ) plasma of a specific recipe is introduced. It is shown that the presence of the nitrogen plasma improves the titanium nitride (TiN) barrier layer through annealing, and nitrogen stuffing of the grain boundaries. In addition, a titanium (Ti) layer must be used prior to the deposition of the TiN layer in order to improve adhesion. This step also enhances the titanium nitride barrier, and reduces the contact resistance (R c ) of the contact-plugs as well. Finally, the nitrogen plasma process and the metal deposition can be done in one and the same equipment.
Inventors
- 👤 Ji-Chung Huang
- 👤 Je Wang
- 👤 Ying-Shih Huang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:16
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/047; H10W20/048; H10W20/033; H10W20/056
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
191 words
A method of forming tungsten contact plugs without volcano effect on a semiconductor substrate comprising the steps of: providing a semiconductor substrate having an insulating layer with contact holes formed therein; placing said semiconductor substrate in a tungsten deposition chamber; depositing a titanium layer over said semiconductor substrate in said tungsten deposition chamber; depositing a titanium nitride layer having open columnar structures in between grain boundaries of said titanium nitride layer over said titanium layer in said tungsten deposition chamber; subjecting said titanium nitride layer to an in-situ plasma in said tungsten deposition chamber for about 90 to 120 seconds, wherein the temperature, pressure and power of said plasma are, respectively, between about 400° C. to 480° C., 0.3 torr to 0.6 torr and 80 watts to 120 watts; reacting said plasma with said titanium layer through the overlying said titanium nitride layer to form further titanium nitride so as to fill and seal said open columnar structures between said grain boundaries of said titanium nitride layer; and depositing at least one layer of tungsten metal over said titanium nitride layer to form said contact plugs in said tungsten deposition chamber.
Claim 2
Independent Claim
191 words
A method of forming tungsten contact plugs without volcano effect on a semiconductor substrate comprising the steps of: providing a semiconductor substrate having an insulating layer with contact holes formed therein; placing said semiconductor substrate in a tungsten deposition chamber; depositing a titanium layer over said semiconductor substrate in said tungsten deposition chamber; depositing a titanium nitride layer having open columnar structures in between grain boundaries of said titanium nitride layer over said titanium layer in said tungsten deposition chamber; subjecting said titanium nitride layer to an in-situ plasma in said tungsten deposition chamber for about 90 to 120 seconds, wherein the temperature, pressure and power of said plasma are, respectively, between about 400° C. to 480° C., 0.3 torr to 0.6 torr and 80 watts to 120 watts; reacting said plasma with said titanium layer through the overlying said titanium nitride layer to form further titanium nitride so as to fill and seal said open columnar structures between said grain boundaries of said titanium nitride layer; and depositing at least one layer of tungsten metal over said titanium nitride layer to form said contact plugs in said tungsten deposition chamber.
Claim 3
Dependent Claim
23 words
The method of claim 1, wherein the vertical walls of said contact holes have an included angle between about 85 to 90 degrees.
Claim 4
Dependent Claim
11 words
The method of claim 1, wherein said plasma is nitrogen plasma.
Claim 5
Independent Claim
191 words
A method of forming tungsten via plugs without volcano effect on a semiconductor substrate comprising the steps of: providing a semiconductor substrate having an insulating layer with via holes formed therein; placing said semiconductor substrate in a tungsten deposition chamber; depositing a titanium layer over said semiconductor substrate in said tungsten deposition chamber; depositing a titanium nitride layer having open columnar structures in between grain boundaries of said titanium nitride layer over said titanium layer in said tungsten deposition chamber; subjecting said titanium nitride layer to an in-situ plasma in said tungsten deposition chamber for about 90 to 120 seconds, wherein the temperature, pressure and power of said plasma are, respectively, between about 400° C. to 480° C., 0.3 torr to 0.6 torr and 80 watts to 120 watts; reacting said plasma with said titanium layer through the overlying said titanium nitride layer to form further titanium nitride so as to fill and seal said open columnar structures between said grain boundaries of said titanium nitride layer; and depositing at least one layer of tungsten metal over said titanium nitride layer to form said via plugs in said tungsten deposition chamber.
Claim 6
Independent Claim
191 words
A method of forming tungsten via plugs without volcano effect on a semiconductor substrate comprising the steps of: providing a semiconductor substrate having an insulating layer with via holes formed therein; placing said semiconductor substrate in a tungsten deposition chamber; depositing a titanium layer over said semiconductor substrate in said tungsten deposition chamber; depositing a titanium nitride layer having open columnar structures in between grain boundaries of said titanium nitride layer over said titanium layer in said tungsten deposition chamber; subjecting said titanium nitride layer to an in-situ plasma in said tungsten deposition chamber for about 90 to 120 seconds, wherein the temperature, pressure and power of said plasma are, respectively, between about 400° C. to 480° C., 0.3 torr to 0.6 torr and 80 watts to 120 watts; reacting said plasma with said titanium layer through the overlying said titanium nitride layer to form further titanium nitride so as to fill and seal said open columnar structures between said grain boundaries of said titanium nitride layer; and depositing at least one layer of tungsten metal over said titanium nitride layer to form said via plugs in said tungsten deposition chamber.
Claim 7
Dependent Claim
23 words
The method of claim 4, wherein the vertical walls of said via holes have an included angle between about 85 to 90 degrees.
Claim 8
Dependent Claim
11 words
The method of claim 4, wherein said plasma is nitrogen plasma.
References Cited (Backward Citations)
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