Process for forming MOS device in integrated circuit structure using cobalt silicide contacts as implantation media

Claim 2

A process for forming an MOS structure on a silicon substrate, with shallow source/drains regions and cobalt silicide contacts formed over said source/drain regions of said MOS structure and over a polysilicon gate electrode of said MOS structure, which comprises: a) forming a cobalt layer over said polysilicon gate electrode and at least regions of said silicon substrate where source/drain regions will be formed; b) forming a capping layer over said cobalt layer without exposing said cobalt layer to oxygen-bearing gases; c) thereafter annealing said cobalt layer at a first temperature to form cobalt silicide over areas of said silicon substrate where silicon source/drain regions will be formed, and over said polysilicon gate electrode; d) removing said capping layer, unreacted cobalt, and cobalt reaction products other than cobalt silicide; e) annealing said cobalt silicide at a second temperature higher than said first annealing temperature; f) implanting said cobalt silicide with one or more dopants; and g) further annealing said cobalt silicide to diffuse said one or more dopants from said cobalt silicide into said silicon substrate to form said source/drain regions in said substrate, and to diffuse said one or more dopants into said polysilicon gate electrode.

Claim 3

The process of claim 1 wherein said step of forming said cobalt layer on said MOS structure further comprises depositing from about 30 Å to about 400 Å of cobalt on said MOS structure.

Claim 4

The process of claim 1 wherein said step of forming a capping layer over said cobalt layer further comprises depositing from about 10 Å to about 1000 Å of said capping layer over said cobalt layer.

Claim 5

The process of claim 3 wherein said capping layer comprises a material selected from the group consisting of titanium, tungsten, molybdenum, tantalum, niobium, and a compound containing one of said metals.

Claim 6

The process of claim 3 wherein said capping layer comprises a material selected from the group consisting of titanium, titanium nitride, and tungsten.

Claim 7

The process of claim 1 wherein said step of annealing said structure at said first annealing temperature further comprises annealing said MOS structure at a temperature not exceeding about 600° C.

Claim 8

The process of claim 1 wherein said step of annealing said structure at said first annealing temperature further comprises annealing said MOS structure at a temperature ranging from about 350° C. to about 600° C.

Claim 9

The process of claim 7 wherein said step of annealing said structure at said first annealing temperature further comprises annealing said MOS structure at a temperature ranging from about 425° C. to about 475° C.

Claim 10

The process of claim 1 wherein said step of annealing said structure at said second annealing temperature further comprises annealing said MOS structure at a temperature of at least about 700° C.

Claim 11

The process of claim 1 wherein said step of annealing said structure at said second annealing temperature further comprises annealing said MOS structure at a temperature ranging from about 700° C. to about 800° C.

Claim 12

The process of claim 1 wherein said step of implanting said one or more dopants into said cobalt silicide further comprises implanting said dopants into said cobalt silicide at an energy level ranging from about 10 KEV to about 100 KEV.

Claim 13

The process of claim 1 wherein said step of implanting said one or more dopants into said cobalt silicide further comprises implanting either boron or phosphorus into said cobalt silicide at an energy level ranging from about 10 KEV to about 50 KEV.

Claim 14

The process of claim 1 wherein said step of implanting said one or more dopants into said cobalt silicide further comprises implanting arsenic into said cobalt silicide at an energy level ranging from about 20 KEV to about 100 KEV.

Claim 15

The process of claim 1 wherein said step of further annealing said MOS structure to diffuse said one or more dopants from said cobalt silicide into said silicon substrate further comprises annealing said MOS structure at a temperature ranging from about 800° C. to about 1000° C.

Claim 16

The process of claim 14 wherein said step of further annealing said MOS structure to diffuse said one or more dopants from said cobalt silicide into said silicon substrate further comprises annealing said MOS structure for a period of from about 10 seconds to about 2 minutes.

Claim 17

The process of claim 14 wherein said step of further annealing said MOS structure to diffuse said one or more dopants from said cobalt silicide into said silicon substrate further comprises annealing said MOS structure for a period of from about 20 seconds to about 60 seconds.

Claim 18

A process for forming an MOS structure on a silicon substrate, with shallow source/drains regions and cobalt silicide contacts formed over said source/drain regions of said MOS structure and over a polysilicon gate electrode of said MOS structure, which comprises: a) forming over said polysilicon gate electrode and at least regions of said silicon substrate where source/drain regions will be formed a cobalt layer having a thickness ranging from about 30 Å to about 400 Å; b) forming over said cobalt layer a capping layer having a thickness ranging from about 10 Å to about 1000 Å, without exposing said cobalt layer to oxygen-bearing gases; c) thereafter annealing said cobalt layer at a first temperature not exceeding about 600° C. to form cobalt silicide over areas of said silicon substrate where silicon source/drain regions will be formed, and over said polysilicon gate electrode; d) removing said capping layer, unreacted cobalt, and cobalt reaction products other than cobalt silicide; e) annealing said cobalt silicide at a second temperature of at least about 700° C.; f) implanting said cobalt silicide with one or more dopants at an energy level ranging from about 10 KEV to about 100 KEV; and g) further annealing said cobalt silicide at a temperature of from about 800° C. to about 1000° C. to diffuse said one or more dopants from said cobalt silicide into said silicon substrate to form said source/drain regions in said substrate, and to diffuse said one or more dopants into said polysilicon gate electrode.

Claim 19

A process for forming an MOS structure on a silicon substrate, with shallow source/drains regions and cobalt silicide contacts formed over said source/drain regions of said MOS structure and over a polysilicon gate electrode of said MOS structure, which comprises: a) forming over said polysilicon gate electrode and at least regions of said silicon substrate where source/drain regions will be formed a cobalt layer having a thickness ranging from about 30 Å to about 400 Å; b) forming over said cobalt layer a capping layer having a thickness ranging from about 10 Å to about 1000 Å, without exposing said cobalt layer to oxygen-bearing gases; c) thereafter annealing said cobalt layer at a first temperature not exceeding about 600° C. to form cobalt silicide over areas of said silicon substrate where silicon source/drain regions will be formed, and over said polysilicon gate electrode; d) removing said capping layer, unreacted cobalt, and cobalt reaction products other than cobalt silicide; e) annealing said cobalt silicide at a second temperature of at least about 700° C.; f) implanting said cobalt silicide with one or more dopants at an energy level ranging from about 10 KEV to about 100 KEV; and g) further annealing said cobalt silicide at a temperature of from about 800° C. to about 1000° C. to diffuse said one or more dopants from said cobalt silicide into said silicon substrate to form said source/drain regions in said substrate, and to diffuse said one or more dopants into said polysilicon gate electrode.

Claim 20

The process of claim 17 wherein said capping layer comprises a material selected from the group consisting of titanium, tungsten, and titanium nitride.

Claim 21

The process of claim 17 wherein said step of annealing said structure at said first annealing temperature further comprises annealing said MOS structure at a temperature ranging from about 350° C. to about 600° C.

Claim 22

The process of claim 17 wherein said step of annealing said structure at said second annealing temperature further comprises annealing said MOS structure at a temperature ranging from about 700° C. to about 800° C.

Claim 23

The process of claim 17 wherein said step of further annealing said MOS structure to diffuse said one or more dopants from said cobalt silicide into said silicon substrate further comprises annealing said MOS structure for a period of from about 10 seconds to about 2 minutes.

Claim 24

A process for forming an MOS structure on a silicon substrate, with shallow source/drains regions and cobalt silicide contacts formed over said source/drain regions of said MOS structure and over a polysilicon gate electrode of said MOS structure, which comprises: a) forming over said polysilicon gate electrode and at least regions of said silicon substrate where source/drain regions will be formed a cobalt layer having a thickness ranging from about 30 Å to about 400 Å; b) forming over said cobalt layer a capping layer comprising a material selected from the group consisting of titanium, tungsten, and titanium nitride, having a thickness ranging from about 10 Å to about 1000 Å, without exposing said cobalt layer to oxygen-bearing gases; c) thereafter annealing said cobalt layer at a first temperature of from about 350° C. to about 600° C. to form cobalt silicide over areas of said silicon substrate where silicon source/drain regions will be formed, and over said polysilicon gate electrode; d) removing said capping layer, unreacted cobalt, and cobalt reaction products other than cobalt silicide; e) annealing said cobalt silicide at a second temperature of from about 700° C. to about 800° C.; f) implanting said cobalt silicide with one or more dopants selected from the group consisting of boron, phosphorus, and arsenic at an energy level ranging from about 10 KEV to about 50 KEV for boron and phosphorus, and ranging from about 20 KEV to about 100 KEV for arsenic; and g) further annealing said cobalt silicide for a period of from about 10 seconds to about 2 minutes at a temperature of from about 800° C. to about 1000° C. to diffuse said one or more dopants from said cobalt silicide into said silicon substrate to form said source/drain regions in said substrate, and to diffuse said one or more dopants into said polysilicon gate electrode.

Claim 25

A process for forming an MOS structure on a silicon substrate, with shallow source/drains regions and cobalt silicide contacts formed over said source/drain regions of said MOS structure and over a polysilicon gate electrode of said MOS structure, which comprises: a) forming over said polysilicon gate electrode and at least regions of said silicon substrate where source/drain regions will be formed a cobalt layer having a thickness ranging from about 30 Å to about 400 Å; b) forming over said cobalt layer a capping layer comprising a material selected from the group consisting of titanium, tungsten, and titanium nitride, having a thickness ranging from about 10 Å to about 1000 Å, without exposing said cobalt layer to oxygen-bearing gases; c) thereafter annealing said cobalt layer at a first temperature of from about 350° C. to about 600° C. to form cobalt silicide over areas of said silicon substrate where silicon source/drain regions will be formed, and over said polysilicon gate electrode; d) removing said capping layer, unreacted cobalt, and cobalt reaction products other than cobalt silicide; e) annealing said cobalt silicide at a second temperature of from about 700° C. to about 800° C.; f) implanting said cobalt silicide with one or more dopants selected from the group consisting of boron, phosphorus, and arsenic at an energy level ranging from about 10 KEV to about 50 KEV for boron and phosphorus, and ranging from about 20 KEV to about 100 KEV for arsenic; and g) further annealing said cobalt silicide for a period of from about 10 seconds to about 2 minutes at a temperature of from about 800° C. to about 1000° C. to diffuse said one or more dopants from said cobalt silicide into said silicon substrate to form said source/drain regions in said substrate, and to diffuse said one or more dopants into said polysilicon gate electrode.