US5874131A
Expired / Lapsed
US
⏱️ 0.0 years remaining
CVD method for forming metal-containing films
Assignee: Micron Technology Inc
•
Filing: 1997-08-21
•
Granted: 1999-02-23
•
Expires: 2017-08-21
Abstract
Abstract A method of forming a film on a substrate using Group III metal complexes, including Group IIIA metals and Group IIIB metals, which include the lanthanides. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.
Inventors
- 👤 Brian A. Vaartstra
- 👤 Brenda D. Wanner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:40
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2922; C; C07; C07F; C07F5/00; C07F5/003; C07F5/06; C07F5/069; C23; C23C; C23C16/00; C23C16/06; C23C16/18; C23C16/20; H10P14/24; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H10P14/40; H10P14/42; H10P14/43
Claims Analysis
Total Claims: 45
Claim 1
Independent Claim
92 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a precursor comprising one or more complexes of the formula: (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.x ML.sub.y (Formula I) wherein: M is a Group III metal; each R 1 , R 2 , R 2 , and R 4 group is independently H or an organic group; L is H or an organic group; x=1 to 4; and y=0 to 4; and forming a metal-containing film from the precursor on a surface of the semiconductor substrate or substrate assembly.
Claim 2
Independent Claim
92 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a precursor comprising one or more complexes of the formula: (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.x ML.sub.y (Formula I) wherein: M is a Group III metal; each R 1 , R 2 , R 2 , and R 4 group is independently H or an organic group; L is H or an organic group; x=1 to 4; and y=0 to 4; and forming a metal-containing film from the precursor on a surface of the semiconductor substrate or substrate assembly.
Claim 3
Dependent Claim
33 words
The method of claim 1 wherein the step of forming a metal-containing film comprises vaporizing the precursor and directing it toward the semiconductor substrate or substrate assembly using a chemical vapor deposition technique.
Claim 4
Dependent Claim
20 words
The method of claim 2 wherein the chemical vapor deposition technique comprises flash vaporization, bubbling, microdroplet formation, or combinations thereof.
Claim 5
Dependent Claim
17 words
The method of claim 2 wherein the precursor is vaporized in the presence of a carrier gas.
Claim 6
Dependent Claim
17 words
The method of claim 2 wherein the precursor is vaporized in the presence of a reaction gas.
Claim 7
Dependent Claim
12 words
The method of claim 1 wherein at least one L is H.
Claim 8
Dependent Claim
32 words
The method of claim 1 wherein each R 1 , R 2 , R 3 , and R 4 group is independently H or a (C 1 -C 30 ) organic group.
Claim 9
Dependent Claim
14 words
The method of claim 1 wherein the complex of Formula I is a monomer.
Claim 10
Dependent Claim
31 words
The method of claim 1 wherein each R 1 , R 2 , R 3 , and R 4 group is independently H or a (C 1 -C 4 )alkyl moiety.
Claim 11
Dependent Claim
11 words
The method of claim 1 wherein the precursor is a liquid.
Claim 12
Dependent Claim
30 words
The method of claim 1 wherein the Group III metal is a Group IIIA metal, or a Group IIIB metal selected from the group of Sc, Y. and a lanthanide.
Claim 13
Dependent Claim
16 words
The method of claim 1 wherein the metal-containing film is a Group III metal alloy film.
Claim 14
Dependent Claim
19 words
The method of claim 1 wherein the precursor further comprises one or more compounds containing a Group V element.
Claim 15
Independent Claim
138 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a precursor comprising one or more complexes of the formula: (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.x ML.sub.y (Formula I) wherein: M is a Group III metal; each R 1 , R 2 , R 3 , and R 4 group is independently H or a (C 1 -C 30 )organic group; L is H or a (C 1 -C 30 ) organic group, with the proviso that if M is a Group IIIA metal, at least one L is present and is H; x=1 to 4; and y=0 to 4; and vaporizing the precursor to form vaporized precursor; and directing the vaporized precursor toward the semiconductor substrate or substrate assembly to form a metal-containing film on a surface of the semiconductor substrate or substrate assembly.
Claim 16
Independent Claim
138 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a precursor comprising one or more complexes of the formula: (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.x ML.sub.y (Formula I) wherein: M is a Group III metal; each R 1 , R 2 , R 3 , and R 4 group is independently H or a (C 1 -C 30 )organic group; L is H or a (C 1 -C 30 ) organic group, with the proviso that if M is a Group IIIA metal, at least one L is present and is H; x=1 to 4; and y=0 to 4; and vaporizing the precursor to form vaporized precursor; and directing the vaporized precursor toward the semiconductor substrate or substrate assembly to form a metal-containing film on a surface of the semiconductor substrate or substrate assembly.
Claim 17
Independent Claim
103 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a precursor comprising one or more hydride complexes of the formulas: (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MH (Formula III); (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MH.sub.2 (Formula IV); (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MHR.sup.5 (Formula V); (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.2 MH (Formula VI); (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.2 MHR.sup.5 (Formula VII); or (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.3 MH (Formula VIII) wherein: M is a Group III metal; R 1 , R 2 , R 3 , and R 4 are each independently H or an organic group; and R 5 is an organic group; and forming a metal-containing film from the precursor on a surface of the semiconductor substrate or substrate assembly.
Claim 18
Independent Claim
103 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a precursor comprising one or more hydride complexes of the formulas: (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MH (Formula III); (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MH.sub.2 (Formula IV); (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MHR.sup.5 (Formula V); (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.2 MH (Formula VI); (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.2 MHR.sup.5 (Formula VII); or (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.3 MH (Formula VIII) wherein: M is a Group III metal; R 1 , R 2 , R 3 , and R 4 are each independently H or an organic group; and R 5 is an organic group; and forming a metal-containing film from the precursor on a surface of the semiconductor substrate or substrate assembly.
Claim 19
Dependent Claim
33 words
The method of claim 15 wherein the step of forming a metal-containing film comprises vaporizing the precursor and directing it toward the semiconductor substrate or substrate assembly using a chemical vapor deposition technique.
Claim 20
Dependent Claim
30 words
The method of claim 15 wherein M of the hydride complex is a Group IIIA metal and the precursor further comprises one or more compounds containing a Group V element.
Claim 21
Dependent Claim
11 words
The method of claim 15 wherein the precursor is a liquid.
Claim 22
Independent Claim
128 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a precursor comprising one or more hydride complexes of the formulas: (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MH (Formula III); (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MH.sub.2 (Formula IV); (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MHR.sup.5 (Formula V); (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.2 MH (Formula VI); (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.2 MHR.sup.5 (Formula VII), or (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.3)!.sub.3 MH (Formula VIII) wherein: M is a Group IIIA metal; R 1 , R 2 , R 3 , and R 4 are each independently H or a (C 1 -C 30 )organic group; and R 5 is a (C 1 -C 30 )organic group; and vaporizing the precursor to form vaporized precursor; and directing the vaporized precursor toward the semiconductor substrate or substrate assembly to form a metal-containing film on a surface of the semiconductor substrate or substrate assembly.
Claim 23
Independent Claim
128 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a precursor comprising one or more hydride complexes of the formulas: (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MH (Formula III); (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MH.sub.2 (Formula IV); (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MHR.sup.5 (Formula V); (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.2 MH (Formula VI); (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.2 MHR.sup.5 (Formula VII), or (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.3)!.sub.3 MH (Formula VIII) wherein: M is a Group IIIA metal; R 1 , R 2 , R 3 , and R 4 are each independently H or a (C 1 -C 30 )organic group; and R 5 is a (C 1 -C 30 )organic group; and vaporizing the precursor to form vaporized precursor; and directing the vaporized precursor toward the semiconductor substrate or substrate assembly to form a metal-containing film on a surface of the semiconductor substrate or substrate assembly.
Claim 24
Independent Claim
85 words
A method of forming a film on a substrate, the method comprising: providing a substrate; providing a precursor comprising one or more complexes of the formula: (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.x ML.sub.y (Formula I) wherein: M is a Group III metal; each R 1 , R 2 , R 3 , and R 4 is independently H or an organic group; L is H or an organic group; x=1 to 4; and y=0 to 4; and forming a metal-containing film from the precursor on a surface of the substrate.
Claim 25
Independent Claim
85 words
A method of forming a film on a substrate, the method comprising: providing a substrate; providing a precursor comprising one or more complexes of the formula: (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.x ML.sub.y (Formula I) wherein: M is a Group III metal; each R 1 , R 2 , R 3 , and R 4 is independently H or an organic group; L is H or an organic group; x=1 to 4; and y=0 to 4; and forming a metal-containing film from the precursor on a surface of the substrate.
Claim 26
Dependent Claim
29 words
The method of claim 20 wherein the step of forming a metal-containing film comprises vaporizing the precursor and directing it toward the substrate using a chemical vapor deposition technique.
Claim 27
Dependent Claim
19 words
The method of claim 20 wherein the precursor further comprises one or more compounds containing a Group V element.
Claim 28
Dependent Claim
10 words
The method of claim 20 wherein the precursor is liquid.
Claim 29
Independent Claim
127 words
A method of forming a film on a substrate, the method comprising: providing a substrate; providing a precursor comprising one or more complexes of the formula: (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.x ML.sub.y (Formula I) wherein: M is a Group III metal; each R 1 , R 2 , R 3 , and R 4 is independently H or a (C 1 -C 30 )organic group; L is H or a (C 1 -C 30 ) organic group, with the proviso that if M is a Group IIIA metal, at least one L is present and is H; x=1 to 4; and y=0 to 4; and vaporizing the precursor to form vaporized precursor; and directing the vaporized precursor toward the substrate to form a metal-containing film on a surface of the substrate.
Claim 30
Independent Claim
127 words
A method of forming a film on a substrate, the method comprising: providing a substrate; providing a precursor comprising one or more complexes of the formula: (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.x ML.sub.y (Formula I) wherein: M is a Group III metal; each R 1 , R 2 , R 3 , and R 4 is independently H or a (C 1 -C 30 )organic group; L is H or a (C 1 -C 30 ) organic group, with the proviso that if M is a Group IIIA metal, at least one L is present and is H; x=1 to 4; and y=0 to 4; and vaporizing the precursor to form vaporized precursor; and directing the vaporized precursor toward the substrate to form a metal-containing film on a surface of the substrate.
Claim 31
Independent Claim
98 words
A method of forming a film on a substrate, the method comprising: providing a substrate; providing a precursor comprising one or more hydride complexes of the formulas: (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MH (Formula III); (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MH.sub.2 (Formula IV); (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MHR.sub.5 (Formula V); (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.2 MH (Formula VI); (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.2 MHR.sup.5 (Formula VII); or (R.sup.1)NC(R.sup.2)C(R 3)N(R.sup.4)!.sub.3 MH (Formula VIII) wherein: M is a Group III metal; R 1 , R 2 , R 3 , and R 4 are each independently H or an organic group; and R 5 is an organic group; and forming a metal-containing film from the precursor on a surface of the substrate.
Claim 32
Independent Claim
98 words
A method of forming a film on a substrate, the method comprising: providing a substrate; providing a precursor comprising one or more hydride complexes of the formulas: (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MH (Formula III); (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MH.sub.2 (Formula IV); (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MHR.sub.5 (Formula V); (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.2 MH (Formula VI); (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.2 MHR.sup.5 (Formula VII); or (R.sup.1)NC(R.sup.2)C(R 3)N(R.sup.4)!.sub.3 MH (Formula VIII) wherein: M is a Group III metal; R 1 , R 2 , R 3 , and R 4 are each independently H or an organic group; and R 5 is an organic group; and forming a metal-containing film from the precursor on a surface of the substrate.
Claim 33
Dependent Claim
29 words
The method of claim 25 wherein the step of forming a metal-containing film comprises vaporizing the precursor and directing it toward the substrate using a chemical vapor deposition technique.
Claim 34
Dependent Claim
30 words
The method of claim 25 wherein M of the hydride complex is a Group IIIA metal and the precursor further comprises one or more compounds containing a Group V element.
Claim 35
Dependent Claim
11 words
The method of claim 25 wherein the precursor is a liquid.
Claim 36
Independent Claim
118 words
A method of forming a film on a substrate, the method comprising: providing a substrate; providing a precursor comprising one or more hydride complexes of the formulas: (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MH (Formula III); (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MH.sub.2 (Formula IV); (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MHR.sup.5 (Formula V); (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.2 MH (Formula VI); (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.2 MHR.sup.5 (Formula VII); or (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.3 MH (Formula VIII) wherein: M is a Group IIIA metal; R 1 , R 2 , R 3 , and R 4 are each independently H or a (C 1 -C 30 )organic group; and R 5 is a (C 1 -C 30 )organic group; and vaporizing the precursor to form vaporized precursor; and directing the vaporized precursor toward the substrate to form a metal-containing film on a surface of the substrate.
Claim 37
Independent Claim
118 words
A method of forming a film on a substrate, the method comprising: providing a substrate; providing a precursor comprising one or more hydride complexes of the formulas: (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MH (Formula III); (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MH.sub.2 (Formula IV); (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MHR.sup.5 (Formula V); (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.2 MH (Formula VI); (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.2 MHR.sup.5 (Formula VII); or (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.3 MH (Formula VIII) wherein: M is a Group IIIA metal; R 1 , R 2 , R 3 , and R 4 are each independently H or a (C 1 -C 30 )organic group; and R 5 is a (C 1 -C 30 )organic group; and vaporizing the precursor to form vaporized precursor; and directing the vaporized precursor toward the substrate to form a metal-containing film on a surface of the substrate.
Claim 38
Independent Claim
108 words
A method of fabricating an interconnect for use in an integrated circuit, comprising: providing a semiconductor structure comprising a contact hole; and forming an aluminum alloy in the contact hole, wherein the aluminum alloy comprises at least one Group III metal other than aluminum, wherein the non-aluminum Group III metal is provided utilizing a chemical vapor deposition technique with a precursor comprising one or more complexes of the formula: (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.x M (Formula II), wherein: M is a Group III metal other than aluminum; each R 1 , R 2 , R 3 , and R 4 group is independently H or fin organic group; and x=1 to 4.
Claim 39
Independent Claim
108 words
A method of fabricating an interconnect for use in an integrated circuit, comprising: providing a semiconductor structure comprising a contact hole; and forming an aluminum alloy in the contact hole, wherein the aluminum alloy comprises at least one Group III metal other than aluminum, wherein the non-aluminum Group III metal is provided utilizing a chemical vapor deposition technique with a precursor comprising one or more complexes of the formula: (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.x M (Formula II), wherein: M is a Group III metal other than aluminum; each R 1 , R 2 , R 3 , and R 4 group is independently H or fin organic group; and x=1 to 4.
Claim 40
Dependent Claim
12 words
The method of claim 30, wherein M is a Group IIIB metal.
Claim 41
Dependent Claim
10 words
The method of claim 31, wherein M is a lanthanide.
Claim 42
Independent Claim
117 words
A method of fabricating a metal line in an integrated circuit, comprising: providing a semiconductor structure comprising an active area; and forming an aluminum alloy on the structure such that the aluminum alloy is electrically connected to the active area, wherein the aluminum alloy comprises at least one Group III in addition to aluminum, wherein the non-aluminum Group III metal is provided utilizing a chemical vapor deposition technique with a precursor comprising one or more complexes of the formula: (R.sup.1)NC(R.sup.2)C(R.sub.3)N(R.sup.4)!.sub.x M (Formula II), wherein: M is a Group III metal other than aluminum; each R 1 , R 2 , R 3 and R 4 group is independently H or an organic group; and x=1 to 4.
Claim 43
Independent Claim
117 words
A method of fabricating a metal line in an integrated circuit, comprising: providing a semiconductor structure comprising an active area; and forming an aluminum alloy on the structure such that the aluminum alloy is electrically connected to the active area, wherein the aluminum alloy comprises at least one Group III in addition to aluminum, wherein the non-aluminum Group III metal is provided utilizing a chemical vapor deposition technique with a precursor comprising one or more complexes of the formula: (R.sup.1)NC(R.sup.2)C(R.sub.3)N(R.sup.4)!.sub.x M (Formula II), wherein: M is a Group III metal other than aluminum; each R 1 , R 2 , R 3 and R 4 group is independently H or an organic group; and x=1 to 4.
Claim 44
Dependent Claim
12 words
The method of claim 33, wherein M is a Group IIIB metal.
Claim 45
Dependent Claim
10 words
The method of claim 34, wherein M is a lanthanide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-02-22 | 2002-08-24 | 2003-02-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-02-22 | 2006-08-24 | 2007-02-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-02-22 | 2010-08-24 | 2011-02-23 | $7700.00 | Window Closed / Lapsed |