US5872402A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Interlayer insulating film for semiconductor device
Assignee: Sony Corp
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Filing: 1996-05-24
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Granted: 1999-02-16
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Expires: 2016-05-24
Abstract
Abstract Disclosed is an interlayer insulating film using low dielectric constant films, which can be improved in rigidity without any effect exerted on the reliability of a semiconductor device. The interlayer insulating film, which is formed in such a manner as to cover surroundings of interconnections formed on the semiconductor device, includes low dielectric constant films, each having a dielectric constant of from 1 to 3.5, which are formed in surroundings of the interconnections and between the interconnections; and a supporting layer formed in or through at least one of the low dielectric constant films formed on the upper and lower sides of the interconnections.
Inventors
- 👤 Toshiaki Hasegawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 15:26
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/495; H10W20/45; H10W20/48
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
138 words
An interlayer insulating film for a semiconductor device, which is formed in such a manner as to cover surroundings of interconnections formed in interconnection layers on the semiconductor device, comprising: low dielectric constant films, each having a dielectric constant of from 1 to 3.5, which are formed in surroundings of said interconnections and between said interconnections; and a supporting layer, formed in or through at least one of said low dielectric constant films formed on the upper and lower sides of said interconnections, comprising a supporting portion at a nearly central portion of a space between interconnections which is wider than a pitch of any one of said interconnection layers, said supporting portion being separated from a nearest interconnection by a distance that is about three times a space between the interconnections in any of said interconnection layers.
Claim 2
Dependent Claim
138 words
An interlayer insulating film for a semiconductor device, which is formed in such a manner as to cover surroundings of interconnections formed in interconnection layers on the semiconductor device, comprising: low dielectric constant films, each having a dielectric constant of from 1 to 3.5, which are formed in surroundings of said interconnections and between said interconnections; and a supporting layer, formed in or through at least one of said low dielectric constant films formed on the upper and lower sides of said interconnections, comprising a supporting portion at a nearly central portion of a space between interconnections which is wider than a pitch of any one of said interconnection layers, said supporting portion being separated from a nearest interconnection by a distance that is about three times a space between the interconnections in any of said interconnection layers.
Claim 3
Dependent Claim
61 words
An interlayer insulating film for a semiconductor device according to claim 1, wherein said supporting layer is provided at a position nearly intermediate between a first of said interconnection layers in which said interconnections are disposed in a layer structure and a second of said interconnection layers provided on an upper or lower side of said first of said interconnection layers.
Claim 4
Dependent Claim
42 words
An interlayer insulating film for a semiconductor device according to claim 1, wherein said space between interconnections in which said supporting portion is formed is more than three times a minimum pitch of any one of said interconnections of one interconnection layer.
Claim 5
Dependent Claim
124 words
An interlayer insulating film for a semiconductor device, which is formed in such a manner as to cover surroundings of interconnections formed in interconnection layers on the semiconductor device, comprising: low dielectric constant films, each having a dielectric constant of from 1 to 3.5, which completely surround said interconnection layers, and entirely fill a gap between each of said interconnections within any of said interconnection layers; and a supporting layer formed in or through at least one of said low dielectric constant films that are formed on an upper and a lower side of each of said interconnections layers, and separated from a nearest interconnection by a distance that is about three times a space between the interconnections in any of said interconnection layers.
Claim 6
Dependent Claim
124 words
An interlayer insulating film for a semiconductor device, which is formed in such a manner as to cover surroundings of interconnections formed in interconnection layers on the semiconductor device, comprising: low dielectric constant films, each having a dielectric constant of from 1 to 3.5, which completely surround said interconnection layers, and entirely fill a gap between each of said interconnections within any of said interconnection layers; and a supporting layer formed in or through at least one of said low dielectric constant films that are formed on an upper and a lower side of each of said interconnections layers, and separated from a nearest interconnection by a distance that is about three times a space between the interconnections in any of said interconnection layers.
Claim 7
Dependent Claim
61 words
An interlayer insulating film for a semiconductor device according to claim 4, wherein said supporting layer is provided at a position nearly intermediate between a first of said interconnection layers in which said interconnections are disposed in a layer structure and a second of said interconnection layers provided on an upper or lower side of said first of said interconnection layers.
Claim 8
Dependent Claim
53 words
An interlayer insulating film for a semiconductor device according to claim 4, wherein said supporting layer is provided with a supporting portion, which is connected to said supporting layer, at a nearly central portion of a space between interconnections which is wider than the minimum pitch of said interconnections of one interconnection layer.
Claim 9
Dependent Claim
56 words
An interlayer insulating film for a semiconductor device according to claim 5, wherein said supporting layer is provided with a supporting portion, which is connected to said supporting layer, at a nearly central portion of a space between interconnection layers which is wider than the minimum pitch of any of said interconnections of one interconnection layer.
Claim 10
Dependent Claim
44 words
An interlayer insulating film for a semiconductor device according to claim 6 or 7, wherein said space between interconnections in which said supporting portion is formed is more than three times a minimum pitch of any one of said interconnections of one interconnection layer.
Claim 11
Dependent Claim
23 words
An interlayer insulating film for a semiconductor device according to claim 1 or 4, wherein said low dielectric constant films comprise polyimide fluoride.
Claim 12
Dependent Claim
41 words
An interlayer insulating film for a semiconductor device according to claim 1 or 4, wherein said low dielectric constant films comprise a polymer expressed by a chemical formula (1) ##STR3## wherein R is CH 3 or C 2 H 4 .
Claim 13
Dependent Claim
22 words
An interlayer insulating film for a semiconductor device according to claim 1 or 4, wherein said low dielectric constant films comprise polyparaxylylene.
Claim 14
Dependent Claim
25 words
An interlayer insulating film for a semiconductor device according to claim 1 or 4, wherein said low dielectric constant films comprise a fluorocarbon based material.
Claim 15
Dependent Claim
39 words
An interlayer insulating film for a semiconductor device according to claim 2, wherein said fluorocarbon based material comprises a compound expressed by a chemical formula (2) ##STR4## wherein F in the parenthesis can be replaced with CF 3 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-02-15 | 2002-08-17 | 2003-02-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-02-15 | 2006-08-17 | 2007-02-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-02-15 | 2010-08-17 | 2011-02-16 | $7700.00 | Window Closed / Lapsed |