Abstract The present invention provides a method to maintain a desired width of a floating gate of a flash memory device, so that the loss of the capability of storing charges is reduced. The method for forming a floating gate in a flash memory device containing a dielectric layer between said floating gate and a control gate, comprising the steps: forming field oxide layers in a semiconductor substrate; forming a gate oxide layer and a conductivity layer for said floating gate on said semiconductor substrate; forming a first oxide layer and a silicon nitride layer, in order, on said conductivity layer; forming a photoresist pattern; selectively etching said silicon nitride layer, said first oxide layer and said conductivity layer; forming source/drain regions by an ion implantation process; removing said photoresist pattern; forming a passivation layer on the resulting structure and forming a spacer layer on a sidewall of said floating gate by applying an isotropic etching process to said passivation layer so as to prevent said sidewall of said floating gate from being oxidized; forming a second oxide layer on said silicon nitride layer; and forming a control gate on the resulting structure.
A method for forming a floating gate in a flash memory device containing a dielectric layer between said floating gate and a control gate, comprising the steps: forming field oxide layers in a semiconductor substrate; forming a gate oxide layer and a conductivity layer for a floating gate on said semiconductor substrate; forming a first oxide layer and a silicon nitride layer, in order, on said conductivity layer; forming a photoresist pattern; selectively etching said silicon nitride layer, said first oxide layer and said conductivity layer; forming source/drain regions by an ion implantation process; removing said photoresist pattern, thereby forming a first resulting structure; forming an undoped polysilicon layer on the first resulting structure; and forming a spacer layer on a sidewall of said floating gate by applying an isotropic etching process to said undoped polysilicon layer so as to prevent said sidewall of said floating gate from being oxidized; forming a second oxide layer on said silicon nitride layer, thereby forming a second resulting structure; and forming a control gate on the second resulting structure.
Claim 2
Independent Claim
176 words
A method for forming a floating gate in a flash memory device containing a dielectric layer between said floating gate and a control gate, comprising the steps: forming field oxide layers in a semiconductor substrate; forming a gate oxide layer and a conductivity layer for a floating gate on said semiconductor substrate; forming a first oxide layer and a silicon nitride layer, in order, on said conductivity layer; forming a photoresist pattern; selectively etching said silicon nitride layer, said first oxide layer and said conductivity layer; forming source/drain regions by an ion implantation process; removing said photoresist pattern, thereby forming a first resulting structure; forming an undoped polysilicon layer on the first resulting structure; and forming a spacer layer on a sidewall of said floating gate by applying an isotropic etching process to said undoped polysilicon layer so as to prevent said sidewall of said floating gate from being oxidized; forming a second oxide layer on said silicon nitride layer, thereby forming a second resulting structure; and forming a control gate on the second resulting structure.
Claim 3
Dependent Claim
15 words
A method according to claim 1, wherein said conductivity layer is a doped polysilicon layer.