Patent US5869903A successfully refreshed from Google Patents.
US5869903A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Sealed semiconductor device including opposed substrates and metal wall
Assignee: Mitsubishi Electric Corp
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Filing: 1997-01-31
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Granted: 1999-02-09
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Expires: 2017-01-31
Abstract
Abstract A semiconductor device includes a circuit substrate having a first surface on which a high-frequency circuit is located; a first metal layer disposed on a second surface of the circuit substrate; bump wirings on the first surface of the circuit substrate and electrically connected to the high-frequency circuit; a metal wall disposed on the first surface of the circuit substrate surrounding the high-frequency circuit; a wiring substrate having one surface on which substrate wirings corresponding to the bump wirings are located, the wiring substrate being disposed on the circuit substrate so that the substrate wirings are electrically connected to the bump wirings, and in contact with the metal wall, sealing a region including the high-frequency circuit; and a second metal layer disposed on a second surface of the wiring substrate. An electromagnetic shielding effect sufficient for use in a high-frequency circuit is obtained and fabricating cost is considerably reduced.
Inventors
- 👤 Mitsunori Nakatani
- 👤 Hirofumi Nakano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:31
CPC Classifications
H; H10; H10W; H10W44/00; H10W44/20; H10W70/00; H10W70/60; H10W70/67; H10W70/688; H10W72/00; H10W72/071; H10W72/072; H10W72/07231; H10W72/07232; H10W72/073; H10W72/07331; H10W72/07332; H10W72/20; H10W72/251; H10W72/30; H10W72/331; H10W72/851; H10W72/853; H10W72/856; H10W72/90; H10W72/921; H10W72/926; H10W90/00; H10W90/701; H10W90/721; H10W90/724; H10W90/731; H10W90/734; H10W99/00
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
185 words
A semiconductor device comprising: a circuit substrate having a first surface on which a high-frequency circuit is located; a first metal layer disposed on a second surface of the circuit substrate opposite the first surface; bump electrodes on the first surface of the circuit substrate and electrically connected to the high-frequency circuit; a metal wall disposed on the first surface of the circuit substrate surrounding the high-frequency circuit; a wiring substrate having a first surface on which substrate metallizations corresponding to the bump electrodes are located; a metal layer for adjusting differences in height between the bump electrodes and the metal wall, the metal layer being disposed between the bump electrodes and the wiring substrate metallizations, and between the metal wall and the wiring substrate, the wiring substrate being disposed opposite the circuit substrate so that the metallizations are electrically connected to the bump electrodes, the metal layer contacting the substrate metallizations and the metal wall, sealing a region including the high-frequency circuit; and a second metal layer disposed on a second surface of the wiring substrate opposite the first surface of the wiring substrate.
Claim 2
Dependent Claim
185 words
A semiconductor device comprising: a circuit substrate having a first surface on which a high-frequency circuit is located; a first metal layer disposed on a second surface of the circuit substrate opposite the first surface; bump electrodes on the first surface of the circuit substrate and electrically connected to the high-frequency circuit; a metal wall disposed on the first surface of the circuit substrate surrounding the high-frequency circuit; a wiring substrate having a first surface on which substrate metallizations corresponding to the bump electrodes are located; a metal layer for adjusting differences in height between the bump electrodes and the metal wall, the metal layer being disposed between the bump electrodes and the wiring substrate metallizations, and between the metal wall and the wiring substrate, the wiring substrate being disposed opposite the circuit substrate so that the metallizations are electrically connected to the bump electrodes, the metal layer contacting the substrate metallizations and the metal wall, sealing a region including the high-frequency circuit; and a second metal layer disposed on a second surface of the wiring substrate opposite the first surface of the wiring substrate.
Claim 3
Dependent Claim
14 words
The semiconductor device of claim 1 wherein the wiring substrate is a TAB tape.
Claim 4
Dependent Claim
36 words
The semiconductor device of claim 1 wherein the substrate metallizations are connected to the bump electrodes through through-holes penetrating the wiring substrate, and including an insulating layer separating the second metal layer from the wiring substrate.
Claim 5
Dependent Claim
131 words
A semiconductor device comprising: a circuit substrate having a first surface on which a high-frequency circuit is located; a first metal layer disposed on a second surface of the circuit substrate opposite the first surface; bump electrodes on the first surface of the circuit substrate and electrically connected to the high-frequency circuit; a metal wall disposed on the first surface of the circuit substrate surrounding the high-frequency circuit; a wiring substrate having a first surface on which substrate metallizations corresponding to and in contact with the bump electrodes are located; an insulating layer disposed between the metal wall and the wiring substrate, sealing a region including the high-frequency circuit; and a second metal layer disposed on a second surface of the wiring substrate opposite the first surface of the wiring substrate.
Claim 6
Dependent Claim
131 words
A semiconductor device comprising: a circuit substrate having a first surface on which a high-frequency circuit is located; a first metal layer disposed on a second surface of the circuit substrate opposite the first surface; bump electrodes on the first surface of the circuit substrate and electrically connected to the high-frequency circuit; a metal wall disposed on the first surface of the circuit substrate surrounding the high-frequency circuit; a wiring substrate having a first surface on which substrate metallizations corresponding to and in contact with the bump electrodes are located; an insulating layer disposed between the metal wall and the wiring substrate, sealing a region including the high-frequency circuit; and a second metal layer disposed on a second surface of the wiring substrate opposite the first surface of the wiring substrate.
Claim 7
Dependent Claim
26 words
The semiconductor device of claim 1 wherein cavities sealed by the circuit substrate, the wiring substrate, and the metal wall are filled with an inert gas.
Claim 8
Dependent Claim
26 words
The semiconductor device of claim 1 wherein cavities sealed by the circuit substrate, the wiring substrate, and the metal wall are filled with an insulating resin.
Claim 9
Dependent Claim
167 words
A semiconductor device including: a circuit substrate having a first surface on which a high-frequency circuit is located; a first metal layer disposed on a second surface of the circuit substrate opposite the first surface; bump electrodes on the first surface of the circuit surface and electrically connected to the high-frequency circuit; a metal wall disposed on the first surface of the circuit substrate surrounding the high-frequency circuit; a wiring substrate having a first surface on which substrate metallizations corresponding to the bump electrodes are located, the wiring substrate being disposed opposite the circuit substrate so that the substrate metallizations are electrically connected to the bump electrodes, and contacting the metal wall, sealing a region including the high-frequency circuit; a second metal layer disposed on a second surface of the wiring substrate opposite the first surface of the wiring substrate; and a resin covering the second surface of the circuit substrate and outside surfaces of the metal wall and contacting the first surface of the wiring substrate.
Claim 10
Dependent Claim
167 words
A semiconductor device including: a circuit substrate having a first surface on which a high-frequency circuit is located; a first metal layer disposed on a second surface of the circuit substrate opposite the first surface; bump electrodes on the first surface of the circuit surface and electrically connected to the high-frequency circuit; a metal wall disposed on the first surface of the circuit substrate surrounding the high-frequency circuit; a wiring substrate having a first surface on which substrate metallizations corresponding to the bump electrodes are located, the wiring substrate being disposed opposite the circuit substrate so that the substrate metallizations are electrically connected to the bump electrodes, and contacting the metal wall, sealing a region including the high-frequency circuit; a second metal layer disposed on a second surface of the wiring substrate opposite the first surface of the wiring substrate; and a resin covering the second surface of the circuit substrate and outside surfaces of the metal wall and contacting the first surface of the wiring substrate.
Claim 11
Dependent Claim
14 words
The semiconductor device of claim 1 wherein the wiring substrate comprises a transparent material.
Claim 12
Dependent Claim
14 words
The semiconductor device of claim 1 wherein the wiring substrate is a printed board.
Claim 13
Dependent Claim
199 words
A semiconductor device comprising: a circuit substrate having a first surface on which a high-frequency circuit is located; a first metal layer disposed on a second surface of the circuit substrate opposite the first surface; bump electrodes on the first surface of the circuit substrate and electrically connected to the high-frequency circuit; a metal wall disposed on the first surface of the circuit substrate surrounding the high-frequency circuit; a wiring substrate having a first surface on which substrate metallizations corresponding to the bump electrodes are located; a metal layer for adjusting differences in height between the bump electrodes and the metal wall, the metal layer being disposed between the bump electrodes and the wiring substrate metallizations, and between the metal wall and the wiring substrate, the wiring substrate being disposed opposite the circuit substrate so that the metallizations are electrically connected to the bump electrodes, the metal layer contacting the substrate metallizations and the metal wall, sealing a region including the high-frequency circuit; an insulating layer disposed on the second surface of the wiring substrate opposite the first surface of the wiring substrate and on the first metal layer; and a second metal layer disposed on the insulating layer.
Claim 14
Dependent Claim
199 words
A semiconductor device comprising: a circuit substrate having a first surface on which a high-frequency circuit is located; a first metal layer disposed on a second surface of the circuit substrate opposite the first surface; bump electrodes on the first surface of the circuit substrate and electrically connected to the high-frequency circuit; a metal wall disposed on the first surface of the circuit substrate surrounding the high-frequency circuit; a wiring substrate having a first surface on which substrate metallizations corresponding to the bump electrodes are located; a metal layer for adjusting differences in height between the bump electrodes and the metal wall, the metal layer being disposed between the bump electrodes and the wiring substrate metallizations, and between the metal wall and the wiring substrate, the wiring substrate being disposed opposite the circuit substrate so that the metallizations are electrically connected to the bump electrodes, the metal layer contacting the substrate metallizations and the metal wall, sealing a region including the high-frequency circuit; an insulating layer disposed on the second surface of the wiring substrate opposite the first surface of the wiring substrate and on the first metal layer; and a second metal layer disposed on the insulating layer.
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US5175611A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-02-08 | 2002-08-10 | 2003-02-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-02-08 | 2006-08-10 | 2007-02-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-02-08 | 2010-08-10 | 2011-02-09 | $7700.00 | Window Closed / Lapsed |