Millimeter wave ceramic package

Claim 2

A hermetically sealable package for an electronic device comprising: a supporting base; a dielectric substrate disposed on said base, said substrate extending substantially along the peripheral edge of said base to thereby define an aperture therein; a solid electrically conductive layer substantially covering a first surface of said dielectric substrate; a series of continuous transmission lines disposed on an opposing second surface of said substrate: a dielectric layer disposed upon and substantially covering said second surface of said substrate and middle portions of said transmission lines while leaving inner and outer ends of the transmission lines exposed; a seal ring disposed upon said dielectric layer; a conductor for electrically connecting said device to at least one inner end of one of said transmission lines; and a lid sealed atop said seal ring to thereby seal said device between said seal ring, lid and base.

Claim 3

The package of claim 1 wherein said package further comprises at least one electrically conductive path formed on a surface of said base exposed by said aperture in said substrate, said package further including means for electrically connecting said conductive path to said electronic device.

Claim 4

The package of claim 1 wherein said package further includes at least one via formed through said substrate and said dielectric material, said via being filled with an electrically conductive material.

Claim 5

The package of claim 3 wherein said vias are disposed beneath said seal ring.

Claim 6

The package of claim 1 wherein said base is formed of an electrically conductive material.

Claim 7

The package of claim 1 wherein said dielectric layer includes at least one opening formed therethrough, said opening exposing a portion of at least one said transmission line.

Claim 8

The package of claim 1 wherein said transmission line is comprised of three sections, a first section being wider than a third section and a second section being disposed intermediate said first and third sections, said transmission line being tapered in width between said sections.

Claim 9

The package of claim 1 wherein at least one said transmission line is a DC bias line.

Claim 10

The package of claim 1 wherein said means for electrically connecting is a wire.

Claim 11

The package of claim 1 wherein said base is formed of a dielectric material.

Claim 12

The package of claim 1 wherein said means for electrically connecting is a ribbon.

Claim 13

A hermetically sealed package for a high frequency semiconductor device operating in frequencies in excess of 5 MHz, said package comprising: a generally rectangular supporting base; an annular ceramic substrate disposed on said base, said ceramic substrate having a generally flat upper surface and an opposing lower surface; a ground plane sandwiched between an upper surface of the base and the lower surface of the substrate; a plurality of transmission lines on the upper surface of the substrate, each transmission line being a continuous strip of conductive material having an outer end, a middle portion and an inner end; a dielectric layer on the upper surface of the substrate, said dielectric layer covering middle portions of said transmission lines while leaving said inner and outer ends of the transmission lines exposed; an annular seal ring disposed upon the dielectric layer, said seal ring being made of electrically conductive material and having at least one via extending therethrough, said via being aligned with openings in the dielectric layer and the substrate to make electrical connection to the ground plane; at least one of said high frequency devices being mounted within the aperture and having a plurality of bonding pads on one surface thereof; means for making electrical connection between the bonding pads and the inner ends of the transmission lines; and wherein said transmission lines are formed of etchable material with the inner and outer ends being tapered to provide preselected matched impedances.

Claim 14

A hermetically sealed package for a high frequency semiconductor device operating in frequencies in excess of 5 MHz, said package comprising: a generally rectangular supporting base; an annular ceramic substrate disposed on said base, said ceramic substrate having a generally flat upper surface and an opposing lower surface; a ground plane sandwiched between an upper surface of the base and the lower surface of the substrate; a plurality of transmission lines on the upper surface of the substrate, each transmission line being a continuous strip of conductive material having an outer end, a middle portion and an inner end; a dielectric layer on the upper surface of the substrate, said dielectric layer covering middle portions of said transmission lines while leaving said inner and outer ends of the transmission lines exposed; an annular seal ring disposed upon the dielectric layer, said seal ring being made of electrically conductive material and having at least one via extending therethrough, said via being aligned with openings in the dielectric layer and the substrate to make electrical connection to the ground plane; at least one of said high frequency devices being mounted within the aperture and having a plurality of bonding pads on one surface thereof; means for making electrical connection between the bonding pads and the inner ends of the transmission lines; and wherein said transmission lines are formed of etchable material with the inner and outer ends being tapered to provide preselected matched impedances.