US5408121A
Expired / Lapsed
US
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Semiconductor device, an image sensor device, and methods for producing the same
Assignee: Panasonic Holdings Corp
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Filing: 1993-10-04
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Granted: 1995-04-18
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Expires: 2013-10-04
Abstract
Abstract A semiconductor device according to the present invention includes: a light-transmitting substrate having a first surface and a second surface; a circuit conductor layer formed on the first surface of the light-transmitting substrate; a semiconductor chip having electrodes formed on a surface thereof, the semiconductor device being mounted face-down on the first surface of the light-transmitting substrate; a photo-thermal cross-linkable insulating resin layer for fixing the semiconductor chip on the light-transmitting substrate; a plated metal layer formed on at least a portion of the circuit conductor layer, the electrodes of the semiconductor chip being connected to the circuit conductor layer through the plated metal layer; an alloy layer formed in an abutting portion between each plated metal layer and the circuit conductor layer; and a second alloy layer formed in an abutting portion between each electrode and each plated metal layer, the alloy layers being formed by melting and recoagulating the plated metal layer upon the circuit conductor layer.
Inventors
- 👤 Tetsuro Nakamura
- 👤 Eiichiro Tanaka
- 👤 Shinji Fujiwara
- 👤 Masahiro Nakagawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 17:31
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/50; H10W; H10W74/00; H10W74/01; H10W74/012; H10W74/10; H10W74/15; H10W72/00; H10W72/071; H10W72/072; H10W72/07231; H10W72/07236; H10W72/073; H10W72/07331; H10W72/07335; H10W72/07337; H10W72/07338; H10W72/20; H10W72/241; H10W72/251; H10W72/252; H10W72/851; H10W72/853; H10W72/856; H10W90/00; H10W90/701; H10W90/721; H10W90/724; H10W90/731; H10W90/734; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/49128; Y10T29/4913; Y10T29/49144
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
159 words
A semiconductor device comprising: a light-transmitting substrate having a first surface and a second surface; a circuit conductor layer formed on the first surface of the light-transmitting substrate; a semiconductor chip having electrodes formed on a surface thereof, the semiconductor device being mounted face-down on the first surface of the light-transmitting substrate; a photo-thermal cross-linkable insulating resin layer for fixing the semiconductor chip on the light-transmitting substrate; a plated metal layer formed on at least a portion of the circuit conductor layer, the electrodes of the semiconductor chip being connected to the circuit conductor layer through the plated metal layer; and an alloy layer formed between each plated metal layer and the circuit conductor layer, the alloy layer being formed by melting and recoagulating the plated metal layer upon the circuit conductor layer, wherein a sum total of a thickness of the light-transmitting substrate and a thickness of the photo-thermal cross-linkable insulating resin layer is 150 μm or less.
Claim 2
Dependent Claim
159 words
A semiconductor device comprising: a light-transmitting substrate having a first surface and a second surface; a circuit conductor layer formed on the first surface of the light-transmitting substrate; a semiconductor chip having electrodes formed on a surface thereof, the semiconductor device being mounted face-down on the first surface of the light-transmitting substrate; a photo-thermal cross-linkable insulating resin layer for fixing the semiconductor chip on the light-transmitting substrate; a plated metal layer formed on at least a portion of the circuit conductor layer, the electrodes of the semiconductor chip being connected to the circuit conductor layer through the plated metal layer; and an alloy layer formed between each plated metal layer and the circuit conductor layer, the alloy layer being formed by melting and recoagulating the plated metal layer upon the circuit conductor layer, wherein a sum total of a thickness of the light-transmitting substrate and a thickness of the photo-thermal cross-linkable insulating resin layer is 150 μm or less.
Claim 3
Dependent Claim
22 words
A semiconductor device according to claim 1, further comprising a second alloy layer formed between each electrode and each plated metal layer.
Claim 4
Dependent Claim
16 words
A semiconductor device according to claim 1, wherein the plated metal layer is made of solder.
Claim 5
Dependent Claim
64 words
A semiconductor device according to claim 1, further comprising a metal bump formed on each electrode, each metal bump being connected to the circuit conductor layer through each plated metal layer; and a second alloy layer formed in an abutting portion between each metal bump and each plated metal layer, the second alloy layer being formed by melting and recoagulating the plated metal layer.
Claim 6
Dependent Claim
15 words
A semiconductor device according to claim 4, wherein the metal bumps are made of Au.
Claim 7
Dependent Claim
33 words
A semiconductor device according to claim 1, wherein a sum total of the thickness of the light-transmitting substrate and the thickness of the photo-thermal cross-linkable insulating resin layer is 100 μm or less.
Claim 8
Dependent Claim
170 words
An image sensor device comprising: a light-transmitting substrate having a first surface and a second surface; a circuit conductor layer formed on the first surface of the light-transmitting substrate; an image sensor chip having electrodes and at least one light-sensitive element formed on a surface thereof, the image sensor device being mounted face-down on the first surface of the light-transmitting substrate; a photo-thermal cross-linkable insulating resin layer for fixing the image sensor chip on the light-transmitting substrate; a plated metal layer formed on at least a portion of the circuit conductor layer, the electrodes of the image sensor chip being connected to the circuit conductor layer through the plated metal layer; and an alloy layer formed between each plated metal layer and the circuit conductor layer, the alloy layer being formed by melting and recoagulating the plated metal layer upon the circuit conductor layer, wherein a sum total of a thickness of the light-transmitting substrate and a thickness of the photo-thermal cross-linkable insulating resin layer is 150 μm or less.
Claim 9
Dependent Claim
170 words
An image sensor device comprising: a light-transmitting substrate having a first surface and a second surface; a circuit conductor layer formed on the first surface of the light-transmitting substrate; an image sensor chip having electrodes and at least one light-sensitive element formed on a surface thereof, the image sensor device being mounted face-down on the first surface of the light-transmitting substrate; a photo-thermal cross-linkable insulating resin layer for fixing the image sensor chip on the light-transmitting substrate; a plated metal layer formed on at least a portion of the circuit conductor layer, the electrodes of the image sensor chip being connected to the circuit conductor layer through the plated metal layer; and an alloy layer formed between each plated metal layer and the circuit conductor layer, the alloy layer being formed by melting and recoagulating the plated metal layer upon the circuit conductor layer, wherein a sum total of a thickness of the light-transmitting substrate and a thickness of the photo-thermal cross-linkable insulating resin layer is 150 μm or less.
Claim 10
Dependent Claim
23 words
An image sensor device according to claim 7, further comprising a second alloy layer formed between each electrode and each plated metal layer.
Claim 11
Dependent Claim
17 words
An image sensor device according to claim 7, wherein the plated metal layer is made of solder.
Claim 12
Dependent Claim
65 words
An image sensor device according to claim 7, further comprising: a metal bump formed on each electrode, each metal bump being connected to the circuit conductor layer through each plated metal layer; and a second alloy layer formed in an abutting portion between each metal bump and each plated metal layer, the second alloy layer being formed by melting and recoagulating the plated metal layer.
Claim 13
Dependent Claim
16 words
An image sensor device according to claim 10, wherein the metal bumps are made of Au.
Claim 14
Dependent Claim
34 words
An image sensor device according to claim 7, wherein a sum total of the thickness of the light-transmitting substrate and the thickness of the photo-thermal cross-linkable insulating resin layer is 100 μm or less.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-04-17 | 1998-10-17 | 1999-04-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-04-17 | 2002-10-17 | 2003-04-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-04-17 | 2006-10-17 | 2007-04-18 | $7700.00 | Window Closed / Lapsed |