EP0262580A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method of electrically bonding two objects
Assignee: Toshiba Corp
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Filing: 1987-09-23
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Granted: —
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Expires: 2007-09-23
Abstract
Abstract The present invention provides a method of electrically bonding two objects, comprising a first step of adhering a low-melting point bonding metal (203) to at least one of a terminal (201) of an electronic component (11) and a connection terminal (23) of an object which is to be electrically connected to said electronic component (11) and a second step of bonding said terminal (201) of said electronic component (11) to said connection terminal (23) of said object through said low-melting point bonding metal (203). It is an object of this invention to provide a method for securely bonding electronic components under a low pressure and at a low temperature without damaging a semiconductor device, etc.
Inventors
- 👤 Hiroshi C/O Patent Division Morita
- 👤 Keiko C/O Patent Division Ishizawa
- 👤 Thunekazu C/O Patent Division Yoshino
- 👤 Hisashi C/O Patent Division Naito
- 👤 Masashi C/O Patent Division Nakagawa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 18:45
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/071; H10W72/072; H05; H05K; H05K3/00; H05K3/30; H05K3/32; H05K3/34; H05K3/341; H05K3/3431; H05K3/3436; H05K3/346; H10W72/07231; H10W72/07236; H10W72/20; H10W72/251; H10W72/252
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
80 words
A method of electrically bonding two objects, comprising: a first step of adhering a low-melting point bonding metal (203) to at least one of a terminal (201) of an electronic component (11) and a connection terminal (23) of an object which is to be electrically connected to said electronic component (11); and a second step of bonding said terminal (201) of said electronic component (11) to said connection terminal (23) of said object through said low-melting point bonding metal (203).
Claim 2
Independent Claim
80 words
A method of electrically bonding two objects, comprising: a first step of adhering a low-melting point bonding metal (203) to at least one of a terminal (201) of an electronic component (11) and a connection terminal (23) of an object which is to be electrically connected to said electronic component (11); and a second step of bonding said terminal (201) of said electronic component (11) to said connection terminal (23) of said object through said low-melting point bonding metal (203).
Claim 3
Dependent Claim
21 words
The method according to claim 1, characterized in that said low melting bonding metal (203) is a low-melting point adhesive alloy.
Claim 4
Dependent Claim
40 words
The method according to claim 2, characterized in that said low-melting point adhesive alloy essentially consists of a low-melting point solder alloy and an element for improving a bonding property at the bonding surface between said alloy and said terminals.
Claim 5
Dependent Claim
32 words
The method according to claim 3, characterized in that said low-melting point solder alloy essentially consists of In and two elements selected from a group of Pb, Sn, Zn, Cd and Bi.
Claim 6
Dependent Claim
22 words
The method according to claim 3, characterized in that said element for improving the bonding property at the bonding surface is Sb.
Claim 7
Dependent Claim
48 words
The method according to claim 2, characterized in that said low-melting point adhesive alloy essentially consists of a low-melting point solder alloy, an element for improving a bonding property at the bonding surface between said alloy and said terminals and an element having a strong affinity with oxygen.
Claim 8
Dependent Claim
32 words
The method according to claim 6, characterized in that said low-melting point solder alloy essentially consists of In and two elements selected from a group of Pb, Sn, Zn, Cd and Bi.
Claim 9
Dependent Claim
22 words
The method according to claim 6, characterized in that said element for improving the bonding property at the bonding surface is Sb.
Claim 10
Dependent Claim
38 words
The method according to claim 6, characterized in that said element having a strong affinity with oxygen is at least one element selected from a group of Zn, Aℓ, Ti, Si, Cr, Be and a rare earth element.
Claim 11
Dependent Claim
42 words
The method according to claim 1, characterized in that in said second step, said low-melting point bonding metal (203) is heated to a temperature below a melting point thereof to bond said electrode terminal (201) and said connection terminal (23) through thermocompression.
Claim 12
Dependent Claim
19 words
The method according to claim 1, characterized in that said connection terminal (201) is made of a transparent material.
Claim 13
Dependent Claim
23 words
The method according to claim 11, characterized in that said transparent material is selected from a group of SnO₂, In₂O₃, ATO and ITO.
Claim 14
Dependent Claim
19 words
The method according to claim 1, characterized in that said electronic component (11) is a semiconductor integrated circuit device.
Claim 15
Dependent Claim
20 words
The method according to claim 13, characterized in that said electrode terminal of said electronic component is made of Aℓ.
Claim 16
Dependent Claim
24 words
The method according to claim 13, characterized in that said electrode terminal of said electronic component is formed by lamination of Aℓ and Sn.
Claim 17
Dependent Claim
25 words
The method according to claim 13, characterized in that said electrode terminal of said electronic component is formed by lamination of Aℓ, Au and Sn.
Claim 18
Dependent Claim
57 words
The method according to claim 1, characterized in that a thin film (508) of an element for improving a bonding property at the bonding surface between said low melting bonding metal (503) and said electronic component (504) or said object is applied between said low-melting point bonding metal (503) and said electronic component (504) or said object.
Claim 19
Dependent Claim
39 words
The method according to claim 1, characterized in that a thin film (508) of an element having a strong affinity with oxygen is applied between said low-melting point bonding metal (503) and said electronic component (504) or said object.
Claim 20
Dependent Claim
55 words
The method according to claim 1, characterized in that in said first step, after a low-melting point bonding metal material (605) is disposed above said electrode terminal (604), that portion of said metal material (605) which is aligned with said electrode terminal (604) is stamped out and is fixedly transferred onto said electrode terminal (604).
Claim 21
Dependent Claim
51 words
The method according to claim 1, characterized in that in said first step, after a plurality of elements (703 - 707) constituting a low-melting point bonding metal are sequentially laminated, at least a surface layer portion (707) of said laminated elements is alloyed to form a low-melting point bonding metal layer.
Claim 22
Dependent Claim
23 words
The method according to claim 1, characterized in that said connection terminal (23) is formed on a film (24) made of organic material.
Claim 23
Dependent Claim
24 words
The method according to claim 1, characterized in that said electrode terminal (201) is formed on an insulative substrate (202) made of inorganic material.
Claim 24
Dependent Claim
20 words
The method according to claim 1, characterized in that said connection terminal (23) is formed by Cu plated with Sn.
References Cited (Backward Citations)
No citation records indexed.
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