Inverted chip bonded module with high packaging efficiency

Claim 1

A method of manufacturing a circuit module having a conductive pattern that interconnects input/output pads of at least one semiconductor device to a higher level electronic package, comprising: providing an insulating, planar, inorganic substrate selected from the group consisting of silicon, sapphire and ceramics and glass/ceramics comprising aluminum oxide, aluminum nitride, beryllium oxide, boron nitride, cordierite, mullite, silicon carbide and silicon nitride, the substrate having holes filled with conductive feed-throughs; forming a metallic, conductive pattern layer on at least one planar surface of the inorganic substrate, the conductive pattern layer making contact to the conductive feed-throughs; applying an inorganic, dielectric composition over the conductive pattern layer, the composition forming an inorganic insulating layer; forming openings in the insulating layer, the openings being formed where metallic connections to the conductive pattern layer are required; repeating the steps of forming a metallic conductive pattern and forming an inorganic insulating layer with openings for each of the conductive pattern layers that is required to complete the conductive pattern, each conductive pattern layer making interconnections to previous conductive pattern layers by filling the openings in the insulating layer applied to the previous conductive pattern layer; the openings in the inorganic insulating layer over an outermost conductive pattern layer being formed in positions selected to correspond to input/output pads of the semiconductor device(s) and to expose contact points on the conductive pattern layer; depositing a soft, ductile metal into the openings, the metal filling the opening, electrically connecting to the conductive pattern and forming metal protuberances over the filled openings, the protuberances rising at least 0.01 mm (0.4 mils) beyond the outer surface of the insulating layer, the deposited metal being capable of being metallurgically bonded to the input/output pads of the semiconductor device(s); placing at least one semiconductor device with the input/output pads of the device over the metal protuberances, and simultaneously bonding all the input/output pads of the semiconductor device to the metal protuberances, forming interconnections from the input/output pads of the semiconductor device, through the conductive pattern and the conductive feed-throughs to the higher level electronic package.

Claim 2

A method of manufacturing a circuit module having a conductive pattern that interconnects input/output pads of at least one semiconductor device to a higher level electronic package, comprising: providing an insulating, planar, inorganic substrate selected from the group consisting of silicon, sapphire and ceramics and glass/ceramics comprising aluminum oxide, aluminum nitride, beryllium oxide, boron nitride, cordierite, mullite, silicon carbide and silicon nitride, the substrate having holes filled with conductive feed-throughs; forming a metallic, conductive pattern layer on at least one planar surface of the inorganic substrate, the conductive pattern layer making contact to the conductive feed-throughs; applying an inorganic, dielectric composition over the conductive pattern layer, the composition forming an inorganic insulating layer; forming openings in the insulating layer, the openings being formed where metallic connections to the conductive pattern layer are required; repeating the steps of forming a metallic conductive pattern and forming an inorganic insulating layer with openings for each of the conductive pattern layers that is required to complete the conductive pattern, each conductive pattern layer making interconnections to previous conductive pattern layers by filling the openings in the insulating layer applied to the previous conductive pattern layer; the openings in the inorganic insulating layer over an outermost conductive pattern layer being formed in positions selected to correspond to input/output pads of the semiconductor device(s) and to expose contact points on the conductive pattern layer; depositing a soft, ductile metal into the openings, the metal filling the opening, electrically connecting to the conductive pattern and forming metal protuberances over the filled openings, the protuberances rising at least 0.01 mm (0.4 mils) beyond the outer surface of the insulating layer, the deposited metal being capable of being metallurgically bonded to the input/output pads of the semiconductor device(s); placing at least one semiconductor device with the input/output pads of the device over the metal protuberances, and simultaneously bonding all the input/output pads of the semiconductor device to the metal protuberances, forming interconnections from the input/output pads of the semiconductor device, through the conductive pattern and the conductive feed-throughs to the higher level electronic package.