EP0165575A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method for forming vias in a planar structure
Assignee: International Business Machines Corp
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Filing: 1985-06-15
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Granted: —
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Expires: 2005-06-15
Abstract
Abstract A method for forming vias in a planar structure is described. In the fabrication of an interconnection package for a plurality of semiconductor or integrated circuit chips (24) a multi-layered glass superstructure (30) with a multi-layered distribution of planar conductors (48) is formed by a process forming vertical conductive interconnection or studs (54) between planar conductor layers (48) by pre-forming a stepped-shoulder or counter-bored via configuration in each glass-layer (50) at the interconnection points followed by depositing the conductive studs therein.
Inventors
- 👤 Pamela Anne Leary-Renick
- 👤 Rangaswamy Strinivasan
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 14:05
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/611; H05; H05K; H05K3/00; H05K3/0011; H05K3/0017; H05K3/0026; H05K3/0029; H10W70/01; H10W70/05; H10W70/095; H10W70/67; H10W70/68; H10W70/685; H05K1/00; H05K1/02; H05K1/03; H05K1/0306; H05K1/11; H05K1/115; H05K2201/00; H05K2201/09; H05K2201/09209; H05K2201/095; H05K2201/096; H05K2201/09818; H05K2201/09845; H05K2203/00; H05K2203/05; H05K2203/0548; H05K2203/0557; H05K3/46; H05K3/4644; H05K3/4664; H05K3/4667; H10W72/00; H10W72/071; H10W72/072; H10W72/07251; H10W72/20
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
154 words
A method for forming vias in a planar structure, characterized by the steps of: A) superimposing over said structure (80) an inert first mask (201) having a pattern of first apertures (203) therethrough; B) masking said structure with said first mask and employing said first apertures thereof to partially ablate vias (205) through the top of and into said structure in the areas opposite said first apertures, with the bottom of said vias spaced from the bottom of said structure; C) replacing said first mask (201) with a second mask (202) having a pattern of second apertures (206) extending therethrough, said pattern of second apertures corresponding to said pattern of said first mask with said second pattern of apertures being substantially smaller than and concentric with said first apertures; and D) employing said second mask to completely ablate through said structure at areas opposite said second apertures to form vias (209) having stepped-shoulder-counter-bored configurations.
Claim 2
Independent Claim
154 words
A method for forming vias in a planar structure, characterized by the steps of: A) superimposing over said structure (80) an inert first mask (201) having a pattern of first apertures (203) therethrough; B) masking said structure with said first mask and employing said first apertures thereof to partially ablate vias (205) through the top of and into said structure in the areas opposite said first apertures, with the bottom of said vias spaced from the bottom of said structure; C) replacing said first mask (201) with a second mask (202) having a pattern of second apertures (206) extending therethrough, said pattern of second apertures corresponding to said pattern of said first mask with said second pattern of apertures being substantially smaller than and concentric with said first apertures; and D) employing said second mask to completely ablate through said structure at areas opposite said second apertures to form vias (209) having stepped-shoulder-counter-bored configurations.
Claim 3
Dependent Claim
15 words
The method of claim 1 characterized in that said vias are ablated by laser drilling.
Claim 4
Dependent Claim
15 words
The method of claim 1 characterized in that said vias are ablated by laser etching.
Claim 5
Dependent Claim
29 words
The method of claim 1 characterized in that said structure comprises a layer (88) on a dissimilar substrate (32), and said vias are formed to extend to said substrate.
Claim 6
Dependent Claim
78 words
The method of claim 1 characterized in that said structure comprises a dielectric layer (50) on a substrate (32) comprised of a multi-layered ceramic having a pattern of a plurality of spaced and interconnected conductive planes (36) and including a patterned conductive plane (88) on the surface of said substrate adjacent said layer, and portion of which are selectively exposed by said vias and forming a conductive second pattern on said structure including conductive interconnections in said vias.
Claim 7
Dependent Claim
14 words
The method of claim 5 characterized in that said layer is comprised of glass.
Claim 8
Dependent Claim
14 words
The method of claim 5 characterized in that said layer is a borosilicate glass.
Claim 9
Dependent Claim
78 words
The method of claim 1 characterized in that said structure comprises a dielectric layer (98A) on a substrate (80) comprosed of a multi-layered glass-ceramic having a pattern of a plurality of spaced and interconnected conductive planes (36) and including a patterned conductive plane (88) on the surface of said substrate adjacent said layer with portions thereof selectively exposed by said vias; and forming a conductive second pattern (104) on said structure comprised of conductive interconnections in said vias.
Claim 10
Dependent Claim
14 words
The method of claim 5 characterized in that said layer is comprised of glass.
Claim 11
Dependent Claim
72 words
The method of claim 5 characterized by coating said structures with a second planar (98B) dielectric layer; forming in accordance with claim 1 a second set of vias (209) having a stepped-shouldered counter-bored configuration in said second dielectric layer extending to selected portions of said conductive second pattern (104); and forming a conductive third pattern (146) on said second planar dielectric layer comprised of conductive interconnection in said second set of vias.
References Cited (Backward Citations)
No citation records indexed.
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