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US5858849A
Expired / Lapsed
US
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Method of manufacturing self-aligned silicide
Assignee: United Microelectronics Corp
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Filing: 1998-03-25
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Granted: 1999-01-12
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Expires: 2018-03-25
Abstract
Abstract The present invention disclose a salicide process with a self-preamorphization step to reduce the sheet resistance of the source/drain region. The salicide process, comprising the steps of performing a pre-amorphization step on the surface of the silicon and simultaneously forming a metal layer, further contains the substeps of applying a back bias to the bottom of the substrate, using ion metal plasma to transform the surface of the substrate into amorphous silicon, forming a metal layer on the surface of the substrate and then using a thermal process having two stages to transform the metal into the salicide.
Inventors
- 👤 Tung-Po Chen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 11:56
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/0131; H10D64/011; H10D64/0111; H10D64/0112; H10D30/00; H10D30/01; H10D30/021; H10D30/0212
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
152 words
A method of manufacturing a self-aligned silicide with a self-preamorphization step, the silicide process being applicable to a device having a semiconductor substrate, the device comprising a device isolation region, a gate electrode, a spacer formed at a sidewall of the gate electrode and a source/drain region formed near the surface of the substrate and around the periphery of the gate electrode, comprising the steps of: forming a metal layer over the surface of the semiconductor substrate, including the steps of applying a back bias to the bottom of the semiconductor substrate, applying a metal ion plasma to the semiconductor surface, thereby bombarding the surfaces of the gate electrode and source/drain region to form an amorphous silicon surface layer while simultaneously forming the metal layer on the surface of the semiconductor substrate; and performing a thermal process to form a silicide layer on the surfaces of the gate electrode and source/drain region.
Claim 2
Independent Claim
152 words
A method of manufacturing a self-aligned silicide with a self-preamorphization step, the silicide process being applicable to a device having a semiconductor substrate, the device comprising a device isolation region, a gate electrode, a spacer formed at a sidewall of the gate electrode and a source/drain region formed near the surface of the substrate and around the periphery of the gate electrode, comprising the steps of: forming a metal layer over the surface of the semiconductor substrate, including the steps of applying a back bias to the bottom of the semiconductor substrate, applying a metal ion plasma to the semiconductor surface, thereby bombarding the surfaces of the gate electrode and source/drain region to form an amorphous silicon surface layer while simultaneously forming the metal layer on the surface of the semiconductor substrate; and performing a thermal process to form a silicide layer on the surfaces of the gate electrode and source/drain region.
Claim 3
Dependent Claim
13 words
A method according to claim 1, wherein the gate electrode comprises a doped-polysilicon.
Claim 4
Dependent Claim
12 words
A method according to claim 1, wherein the metal layer comprises titanium.
Claim 5
Dependent Claim
14 words
A method according to claim 1, wherein the back bias comprises a negative voltage.
Claim 6
Dependent Claim
18 words
A method according to claim 1, wherein the thermal process comprises a rapid thermal process having two stages.
Claim 7
Dependent Claim
27 words
A method according to claim 5, wherein the rapid thermal process in the first stage is performed with nitrogen gases at the temperature of about 600°˜750° C.
Claim 8
Dependent Claim
29 words
A method according to claim 6, wherein after the step of performing the rapid thermal process, further comprises the substep of removing the unreacted metal in the metal layer.
Claim 9
Dependent Claim
28 words
A method according to claim 7, wherein after the step of removing the unreacted metal, further comprises the substep of using a RCA cleaning solution which comprises NH4OH/HDIW/H2O2.
Claim 10
Dependent Claim
27 words
A method according to claim 5, wherein the rapid thermal process in the second stage is performed with nitrogen gases at the temperature of about 750°˜900° C.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2002-01-11 | 2002-07-13 | 2003-01-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-01-11 | 2006-07-13 | 2007-01-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-01-11 | 2010-07-13 | 2011-01-12 | $7700.00 | Window Closed / Lapsed |