US5854133A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for manufacturing a semiconductor device
Assignee: Toshiba Corp
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Filing: 1996-08-15
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Granted: 1998-12-29
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Expires: 2016-08-15
Abstract
Abstract According to the present invention, to flatten the surface of a silicon substrate by polishing an element isolating buried insulation film by chemical mechanical polishing, a polysilicon film is formed on the top surface of a projection of a silicon substrate. After that, a buried insulation film is formed all over the silicon substrate along the irregularities thereof. A carbon film is formed on the surface of a recess of the buried insulation film. Using the carbon film as a stopper, the buried insulation film is polished by the chemical mechanical polishing to ease the irregularities of the surface of the polished insulation film. Then the carbon film is removed and, using the polysilicon film as a stopper, the buried insulation film is polished by the chemical mechanical polishing to flatten the surface of the polished insulation film. Thus, the flatness of the buried insulation film can easily be controlled, and the surface of the silicon substrate can always be flattened satisfactorily.
Inventors
- 👤 Takayo Hachiya
- 👤 Moto Yabuki
- 👤 Hiroyuki Kamijou
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 03:41
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10P52/00; H10P95/00; H10P95/06; H10P95/062
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
165 words
A method for manufacturing a semiconductor device, comprising the steps of: preparing a semiconductor substrate having a projection at a first part: forming an intermediate film on the surface of the substrate; forming a first protection film on a top surface of said projection on said intermediate film; forming a buried insulation film covering said substrate and said first protection film; forming a second protection film at a level higher than a top surface of said first protection film and on that part of said buried insulation film which is located above a part of said substrate which is other than said first part; polishing said buried insulation film by chemical mechanical polishing using said second protection film as a stopper, thereby easing irregularities of a polished surface of said buried insulation film; removing said second protection film; polishing said buried insulation film by chemical mechanical polishing using said first protection film as a stopper, thereby flattening a polished surface of said buried insulation film.
Claim 2
Independent Claim
165 words
A method for manufacturing a semiconductor device, comprising the steps of: preparing a semiconductor substrate having a projection at a first part: forming an intermediate film on the surface of the substrate; forming a first protection film on a top surface of said projection on said intermediate film; forming a buried insulation film covering said substrate and said first protection film; forming a second protection film at a level higher than a top surface of said first protection film and on that part of said buried insulation film which is located above a part of said substrate which is other than said first part; polishing said buried insulation film by chemical mechanical polishing using said second protection film as a stopper, thereby easing irregularities of a polished surface of said buried insulation film; removing said second protection film; polishing said buried insulation film by chemical mechanical polishing using said first protection film as a stopper, thereby flattening a polished surface of said buried insulation film.
Claim 3
Dependent Claim
25 words
The method according to claim 1, wherein said second protection film has a polishing speed which is lower than that of said buried insulation film.
Claim 4
Dependent Claim
15 words
The method according to claim 1, wherein said second protection film includes a carbon film.
Claim 5
Independent Claim
14 words
The method according to claims 1, wherein said intermediate film is an oxide film.
Claim 6
Independent Claim
154 words
A method for manufacturing a semiconductor device, comprising the steps of: preparing a semiconductor substrate having a projection at a first part; forming a first protection film on said projection with an oxide film interposed therebetween; forming a buried insulation film covering said substrate and said first protection film; forming a second protection film at a level higher than a top surface of said first protection film and on that part of said buried insulation film which is located above a part of said substrate which is other than said first part; polishing said buried insulation film by chemical mechanical polishing using said second protection film as a stopper, thereby easing irregularities of a polished surface of said buried insulation film; and removing said second protection film; polishing said buried insulation film by chemical mechanical polishing using said first protection film as a stopper, thereby flattening a polished surface of said buried insulation film.
Claim 7
Independent Claim
154 words
A method for manufacturing a semiconductor device, comprising the steps of: preparing a semiconductor substrate having a projection at a first part; forming a first protection film on said projection with an oxide film interposed therebetween; forming a buried insulation film covering said substrate and said first protection film; forming a second protection film at a level higher than a top surface of said first protection film and on that part of said buried insulation film which is located above a part of said substrate which is other than said first part; polishing said buried insulation film by chemical mechanical polishing using said second protection film as a stopper, thereby easing irregularities of a polished surface of said buried insulation film; and removing said second protection film; polishing said buried insulation film by chemical mechanical polishing using said first protection film as a stopper, thereby flattening a polished surface of said buried insulation film.
Claim 8
Dependent Claim
25 words
The method according to claim 5, wherein said second protection film has a polishing speed which is lower than that of said buried insulation film.
Claim 9
Dependent Claim
15 words
The method according to claim 5, wherein said second protection film includes a carbon film.
Claim 10
Independent Claim
161 words
A method for manufacturing a semiconductor device, comprising the steps of: preparing a semiconductor substrate having a projection at a first part; forming a first protection film on a top surface of said projection; forming a buried insulation film covering said substrate and said first protection film; forming a second protection film at a level higher than a top surface of said first protection film and on that part of said buried insulation film which is located above a part of said substrate which is other than said first part; polishing said buried insulation film by chemical mechanical polishing using said second protection film as a stopper, thereby easing irregularities of a polished surface of said buried insulation film; and removing said second protection film; polishing said buried insulation film by chemical mechanical polishing using said first protection film as a stopper, thereby flattening a polished surface of said buried insulation film; wherein said second protection film includes a carbon film.
Claim 11
Independent Claim
161 words
A method for manufacturing a semiconductor device, comprising the steps of: preparing a semiconductor substrate having a projection at a first part; forming a first protection film on a top surface of said projection; forming a buried insulation film covering said substrate and said first protection film; forming a second protection film at a level higher than a top surface of said first protection film and on that part of said buried insulation film which is located above a part of said substrate which is other than said first part; polishing said buried insulation film by chemical mechanical polishing using said second protection film as a stopper, thereby easing irregularities of a polished surface of said buried insulation film; and removing said second protection film; polishing said buried insulation film by chemical mechanical polishing using said first protection film as a stopper, thereby flattening a polished surface of said buried insulation film; wherein said second protection film includes a carbon film.
Claim 12
Dependent Claim
25 words
The method according to claim 8, wherein said second protection film has a polishing speed which is lower than that of said buried insulation film.
References Cited (Backward Citations)
US5314843A
Cited
US5512163A
Cited
JPH06295908A
Cited
US5607718A
Cited
US5502007A
Cited
US5395801A
Cited
US5629242A
Cited
US5491113A
Cited
US5560802A
Cited
US5674783A
Cited
US5674784A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-12-28 | 2002-06-29 | 2002-12-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-12-28 | 2006-06-29 | 2006-12-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-12-28 | 2010-06-29 | 2010-12-29 | $7700.00 | Window Closed / Lapsed |