US5851900A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a shallow trench isolation for a semiconductor device
Assignee: Hanger Solutions LLC
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Filing: 1997-04-28
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Granted: 1998-12-22
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Expires: 2017-04-28
Abstract
Abstract A new method for forming shallow trench isolation is disclosed herein. A pad oxide layer and a silicon nitride layer are formed on a wafer, respectively. A plurality of trenches are created in the wafer. Then, a SAC layer is formed on an N-well. A BSG layer is formed on a P-well and the N-well. A thermal process is used to form a channel stop in the P-well. Then, the BSG layer and the SAC layer are removed. Subsequently, a LPD oxide layer is deposited in the trenches. Then, a CMP process is used to polish the LPD oxide layer for planarization. The pad oxide layer and the silicon nitride layer are removed. Next, a gate oxide layer is formed on the wafer.
Inventors
- 👤 Chih-Hsun Chu
- 👤 Ching-Nan Yang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 18:46
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/10; H10W10/17
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
234 words
A method of forming a shallow trench isolation on a silicon wafer, a P-well and an N-well being formed in said silicon wafer, said method comprising: forming a pad layer on said silicon wafer; forming a silicon nitride layer on said pad layer; forming a plurality of trenches in said silicon wafer by etching said silicon nitride layer, said pad layer and said silicon wafer; forming a first sacrificial (SAC) oxide layer on the surface of said trenches and on the surface of said pad oxide layer; removing said first SAC oxide layer that is formed on said P-well; forming a BSG layer along the surface of said trenches, said BSG layer being on said pad oxide layer, said silicon nitride layer and said first SAC oxide layer; performing a thermal process for driving the boron ions that is in said BSG layer to diffuse into said P-well, therefore a channel stop layer being formed in said P-well; removing said BSG layer; removing said first SAC oxide layer; forming an oxide layer along the surface of said trenches and on the surface of said pad oxide layer; forming a liquid phase deposition (LPD) oxide layer in said trenches for isolation; performing a CMP process to remove a portion of said LPD oxide layer to the surface of said silicon nitride layer for planarization; removing said silicon nitride layer; and removing said pad oxide layer.
Claim 2
Independent Claim
234 words
A method of forming a shallow trench isolation on a silicon wafer, a P-well and an N-well being formed in said silicon wafer, said method comprising: forming a pad layer on said silicon wafer; forming a silicon nitride layer on said pad layer; forming a plurality of trenches in said silicon wafer by etching said silicon nitride layer, said pad layer and said silicon wafer; forming a first sacrificial (SAC) oxide layer on the surface of said trenches and on the surface of said pad oxide layer; removing said first SAC oxide layer that is formed on said P-well; forming a BSG layer along the surface of said trenches, said BSG layer being on said pad oxide layer, said silicon nitride layer and said first SAC oxide layer; performing a thermal process for driving the boron ions that is in said BSG layer to diffuse into said P-well, therefore a channel stop layer being formed in said P-well; removing said BSG layer; removing said first SAC oxide layer; forming an oxide layer along the surface of said trenches and on the surface of said pad oxide layer; forming a liquid phase deposition (LPD) oxide layer in said trenches for isolation; performing a CMP process to remove a portion of said LPD oxide layer to the surface of said silicon nitride layer for planarization; removing said silicon nitride layer; and removing said pad oxide layer.
Claim 3
Dependent Claim
53 words
The method of claim 1, further comprises the following steps of forming said trenches: patterning a photoresist on said silicon nitride layer to define a plurality of trench regions; and etching said silicon nitride layer, said pad layer and said silicon wafer by using said photoresist as a mask; and removing said photoresist.
Claim 4
Dependent Claim
28 words
The method of claim 1, further comprises the step of forming a gate oxide layer on said wafer adjacent to said trenches after removing said pad oxide layer.
Claim 5
Dependent Claim
30 words
The method of claim 3, further comprises the following steps before forming said gate oxide layer: forming a second SAC layer on said wafer; and removing said second SAC layer.
Claim 6
Dependent Claim
16 words
The method of claim 1, wherein the temperature of said thermal process is about 900°-1000° C.
Claim 7
Dependent Claim
19 words
The method of claim 1, wherein the thickness of said LPD oxide layer is about 2000 to 8000 angstroms.
Claim 8
Dependent Claim
14 words
The method of claim 1, wherein said pad layer is composed of silicon oxide.
Claim 9
Dependent Claim
41 words
The method of claim 1, wherein said silicon nitride layer is formed by a method selected from the group consisting of Low Pressure Chemical Vapor Deposition (LPCVD), Plasma Enhance Chemical Vapor Deposition (PECVD) and High Density Plasma Chemical Vapor Deposition (HDPCVD).
Claim 10
Dependent Claim
28 words
The method of claim 8, wherein the reaction gases of forming said silicon nitride layer are SiH 4 , NH 3 , N 2 and N 2 O.
Claim 11
Dependent Claim
30 words
The method of claim 8, wherein the reaction gases of forming said silicon nitride layer are SiH 2 Cl 2 , NH 3 , N 2 and N 2 O.
Claim 12
Dependent Claim
17 words
The method of claim 1, wherein said silicon nitride layer is removed by using hot phosphorous acid.
Claim 13
Dependent Claim
16 words
The method of claim 7, wherein said pad oxide layer is removed by using HF solution.
Claim 14
Dependent Claim
17 words
The method of claim 3, wherein said first SAC oxide layer is removed by using HF solution.
Claim 15
Dependent Claim
17 words
The method of claim 4, wherein said second SAC oxide layer is removed by using HF solution.
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