Patent US5851703A successfully refreshed from Google Patents.
US5851703A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Photomask and pattern forming method employing the same
Assignee: Renesas Technology Corp
•
Filing: 1997-08-01
•
Granted: 1998-12-22
•
Expires: 2017-08-01
Abstract
Abstract A semitransparent phase shifting mask has, in the periphery of a pattern element area, a light shielding portion which is formed by a semitransparent phase shifting portion and a transparent portion with the optimal size combination. A pattern is formed employing the semitransparent phase shifting mask.
Inventors
- 👤 Norio Hasegawa
- 👤 Fumio Murai
- 👤 Katsuya Hayano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 04:53
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/26; G03F1/32; H; H10; H10P; H10P76/00; G03F1/29; G03F7/00; G03F7/70; G03F7/70058; G03F7/70066; G03F7/20; G03F7/2022
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
211 words
A pattern forming method, comprising the steps of: forming a photoresist film on a substrate; placing said substrate having said photoresist film on a sample stage of an aligner having a masking blade mounted thereon for changing an area through which exposure light is projected; exposing, with a projection exposure optical system, a predetermined first area of said substrate by using a photomask including first and second portions, said first portion being an element pattern portion including a semitransparent phase shifting region, and said second portion including a semitransparent phase shifting pattern and a transparent pattern which are arranged in an alternating and periodic pattern with a predetermined repeated pitch; wherein said semitransparent phase shifting region and said semitransparent phase shifting pattern are semitransparent with respect to exposure light, said transparent pattern is transparent with respect to exposure light, light that has passed through said semitransparent phase shifting region and said semitransparent phase shifting pattern is substantially 180 degrees out of phase with respect to light that has passed through said transparent pattern, and wherein said second portion is disposed outside a periphery of the first portion; moving said substrate horizontally; and exposing a second area of said substrate which is adjacent to said predetermined first area by using said photomask.
Claim 2
Dependent Claim
211 words
A pattern forming method, comprising the steps of: forming a photoresist film on a substrate; placing said substrate having said photoresist film on a sample stage of an aligner having a masking blade mounted thereon for changing an area through which exposure light is projected; exposing, with a projection exposure optical system, a predetermined first area of said substrate by using a photomask including first and second portions, said first portion being an element pattern portion including a semitransparent phase shifting region, and said second portion including a semitransparent phase shifting pattern and a transparent pattern which are arranged in an alternating and periodic pattern with a predetermined repeated pitch; wherein said semitransparent phase shifting region and said semitransparent phase shifting pattern are semitransparent with respect to exposure light, said transparent pattern is transparent with respect to exposure light, light that has passed through said semitransparent phase shifting region and said semitransparent phase shifting pattern is substantially 180 degrees out of phase with respect to light that has passed through said transparent pattern, and wherein said second portion is disposed outside a periphery of the first portion; moving said substrate horizontally; and exposing a second area of said substrate which is adjacent to said predetermined first area by using said photomask.
Claim 3
Dependent Claim
28 words
A pattern forming method according to claim 1, wherein the transmittance of said semitransparent phase shifting region with respect to the exposure light is not higher than 25%.
Claim 4
Independent Claim
303 words
A method of manufacturing a semiconductor device, comprising the steps of: forming impurity-doped layers in a surface of a semiconductor substrate; forming an insulating film on said semiconductor substrate having said impurity-doped layers; forming opening portions through a photoresist film on said impurity-doped layers by a pattern forming method, said pattern forming method including the steps of: forming said photoresist film on said insulating film; placing said semiconductor substrate having said photoresist film on a sample stage of an aligner having a masking blade mounted thereon for changing an area through which exposure light is projected; exposing, with a projection exposure optical system, a predetermined first area of said semiconductor substrate by using a photomask including first and second portions, said first portion being an element pattern portion including a semitransparent phase shifting region, and said second portion including a semitransparent phase shifting pattern and a transparent pattern which are arranged in an alternating and periodic pattern with a predetermined repeated pitch; wherein said semitransparent phase shifting region and said semitransparent phase shifting pattern are semitransparent with respect to exposure light, said transparent pattern is transparent with respect to exposure light, light that has passed through said semitransparent phase shifting region and said semitransparent phase shifting pattern is substantially 180 degrees out of phase with respect to light that has passed through said transparent pattern, and wherein said second portion is disposed outside a periphery of the first portion; moving said semiconductor substrate horizontally; and exposing a second area of said semiconductor substrate which is adjacent to said predetermined first area by using said photomask; etching selectively said insulating film with said photoresist film having said opening portions as a mask to expose said impurity-doped layers; and forming a wiring layer, which is electrically connected to said impurity-doped layers, on said insulating film.
Claim 5
Independent Claim
303 words
A method of manufacturing a semiconductor device, comprising the steps of: forming impurity-doped layers in a surface of a semiconductor substrate; forming an insulating film on said semiconductor substrate having said impurity-doped layers; forming opening portions through a photoresist film on said impurity-doped layers by a pattern forming method, said pattern forming method including the steps of: forming said photoresist film on said insulating film; placing said semiconductor substrate having said photoresist film on a sample stage of an aligner having a masking blade mounted thereon for changing an area through which exposure light is projected; exposing, with a projection exposure optical system, a predetermined first area of said semiconductor substrate by using a photomask including first and second portions, said first portion being an element pattern portion including a semitransparent phase shifting region, and said second portion including a semitransparent phase shifting pattern and a transparent pattern which are arranged in an alternating and periodic pattern with a predetermined repeated pitch; wherein said semitransparent phase shifting region and said semitransparent phase shifting pattern are semitransparent with respect to exposure light, said transparent pattern is transparent with respect to exposure light, light that has passed through said semitransparent phase shifting region and said semitransparent phase shifting pattern is substantially 180 degrees out of phase with respect to light that has passed through said transparent pattern, and wherein said second portion is disposed outside a periphery of the first portion; moving said semiconductor substrate horizontally; and exposing a second area of said semiconductor substrate which is adjacent to said predetermined first area by using said photomask; etching selectively said insulating film with said photoresist film having said opening portions as a mask to expose said impurity-doped layers; and forming a wiring layer, which is electrically connected to said impurity-doped layers, on said insulating film.
Claim 6
Dependent Claim
28 words
A pattern forming method according to claim 3, wherein the transmittance of said semitransparent phase shifting region with respect to the exposure light is not higher than 25%.
Claim 7
Independent Claim
315 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a first insulating film on a substrate; forming a first wiring layer on said first insulating film; forming a second insulating film on said substrate having said first wiring layer; forming opening portions through a photoresist film on said first wiring layer by a pattern forming method, said pattern forming method including the steps of: forming said photoresist film on said second insulating film; placing said substrate having said photoresist film on a sample stage of an aligner having a masking blade mounted thereon for changing an area through which exposure light is projected; exposing, with a projection exposure optical system, a predetermined first area of said substrate by using a photomask including first and second portions, said first portion being an element pattern portion including a semitransparent phase shifting region, and said second portion including a semitransparent phase shifting pattern and a transparent pattern which are arranged in an alternating and periodic pattern with a predetermined repeated pitch; wherein said semitransparent phase shifting region and said semitransparent phase shifting pattern are semitransparent with respect to exposure light, said transparent pattern is transparent with respect to exposure light, light that has passed through said semitransparent phase shifting region and said semitransparent phase shifting pattern is substantially 180 degrees out of phase with respect to light that has passed through said transparent pattern, and wherein said second portion is disposed outside a periphery of the first portion; moving said substrate horizontally; and exposing a second area of said substrate which is adjacent to said predetermined first area by using said photomask; etching selectively said second insulating film with said photoresist film having said opening portions as a mask to expose said first wiring layer; and forming a second wiring layer, which is electrically connected to said first wiring layer, on said second insulation film.
Claim 8
Independent Claim
315 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a first insulating film on a substrate; forming a first wiring layer on said first insulating film; forming a second insulating film on said substrate having said first wiring layer; forming opening portions through a photoresist film on said first wiring layer by a pattern forming method, said pattern forming method including the steps of: forming said photoresist film on said second insulating film; placing said substrate having said photoresist film on a sample stage of an aligner having a masking blade mounted thereon for changing an area through which exposure light is projected; exposing, with a projection exposure optical system, a predetermined first area of said substrate by using a photomask including first and second portions, said first portion being an element pattern portion including a semitransparent phase shifting region, and said second portion including a semitransparent phase shifting pattern and a transparent pattern which are arranged in an alternating and periodic pattern with a predetermined repeated pitch; wherein said semitransparent phase shifting region and said semitransparent phase shifting pattern are semitransparent with respect to exposure light, said transparent pattern is transparent with respect to exposure light, light that has passed through said semitransparent phase shifting region and said semitransparent phase shifting pattern is substantially 180 degrees out of phase with respect to light that has passed through said transparent pattern, and wherein said second portion is disposed outside a periphery of the first portion; moving said substrate horizontally; and exposing a second area of said substrate which is adjacent to said predetermined first area by using said photomask; etching selectively said second insulating film with said photoresist film having said opening portions as a mask to expose said first wiring layer; and forming a second wiring layer, which is electrically connected to said first wiring layer, on said second insulation film.
Claim 9
Dependent Claim
28 words
A pattern forming method according to claim 5, wherein the transmittance of said semitransparent phase shifting region with respect to the exposure light is not higher than 25%.
Claim 10
Dependent Claim
247 words
A pattern forming method, comprising the steps of: illuminating a mask with exposure light by using an aligner having a masking blade mounted thereon for changing an area through which the exposure light is projected; forming a resist film on a substrate; light-exposing a predetermined first region of said resist film through a projection exposure optical system by using the mask which includes first and second portions, said first portion being an element formation chip section including a semitransparent phase shifting region, and said second portion having a semitransparent phase shifting pattern and a transparent pattern arranged in an alternating and periodic pattern with a predetermined repeated pitch that is not larger than the critical resolution of the projection exposure optical system; wherein said semitransparent phase shifting region and said semitransparent phase shifting pattern are semitransparent with respect to exposure light, said transparent pattern is transparent with respect to exposure light, light that has passed through said semitransparent phase shifting region and said semitransparent phase shifting pattern is substantially 180 degrees out of phase with respect to light that has passed through said transparent pattern, and wherein said second portion is disposed at a peripheral portion of said element formation chip section within said mask; moving said substrate in a direction so as to enable light-exposure of a second region of said resist film by using said mask; and light-exposing the second region of said resist film through the projection exposure optical system by using said mask.
Claim 11
Dependent Claim
247 words
A pattern forming method, comprising the steps of: illuminating a mask with exposure light by using an aligner having a masking blade mounted thereon for changing an area through which the exposure light is projected; forming a resist film on a substrate; light-exposing a predetermined first region of said resist film through a projection exposure optical system by using the mask which includes first and second portions, said first portion being an element formation chip section including a semitransparent phase shifting region, and said second portion having a semitransparent phase shifting pattern and a transparent pattern arranged in an alternating and periodic pattern with a predetermined repeated pitch that is not larger than the critical resolution of the projection exposure optical system; wherein said semitransparent phase shifting region and said semitransparent phase shifting pattern are semitransparent with respect to exposure light, said transparent pattern is transparent with respect to exposure light, light that has passed through said semitransparent phase shifting region and said semitransparent phase shifting pattern is substantially 180 degrees out of phase with respect to light that has passed through said transparent pattern, and wherein said second portion is disposed at a peripheral portion of said element formation chip section within said mask; moving said substrate in a direction so as to enable light-exposure of a second region of said resist film by using said mask; and light-exposing the second region of said resist film through the projection exposure optical system by using said mask.
Claim 12
Dependent Claim
31 words
A pattern forming method according to claim 7, wherein said second portion is disposed at two adjacent sides of said peripheral portion of said element formation chip section within said mask.
Claim 13
Dependent Claim
28 words
A pattern forming method according to claim 7, wherein the transmittance of said semitransparent phase shifting region with respect to the exposure light is not higher than 25%.
Claim 14
Dependent Claim
290 words
A pattern forming method, comprising the steps of: illuminating a mask with exposure light by using an aligner having a masking blade mounted thereon for changing an area through which the exposure light is projected; forming a resist film on a substrate; light-exposing a predetermined first region of said resist film through a projection exposure optical system by using the mask which includes first and second portions, said first portion being an element formation chip section including a semitransparent phase shifting region, and said second portion having a semitransparent phase shifting pattern and a transparent pattern arranged in an alternating and periodic pattern with a predetermined repeated pitch, wherein light that has passed through the alternating and periodic pattern of the semitransparent phase shifting pattern and the transparent pattern of said second portion has an intensity on the resist film that is smaller than an intensity on the resist film of light that has passed through the semitransparent phase shifting region of said first portion; wherein said semitransparent phase shifting region and said semitransparent phase shifting pattern are semitransparent with respect to exposure light, said transparent pattern is transparent with respect to exposure light, light that has passed through said semitransparent phase shifting region and said semitransparent phase shifting pattern is substantially 180 degrees out of phase with respect to light that has passed through said transparent pattern, and wherein said second portion is disposed at a peripheral portion of said element formation chip section within said mask; moving said substrate in a direction so as to enable light-exposure of a second region of said resist film by using said mask; and light-exposing the second region of said resist film through the projection exposure optical system by using said mask.
Claim 15
Dependent Claim
290 words
A pattern forming method, comprising the steps of: illuminating a mask with exposure light by using an aligner having a masking blade mounted thereon for changing an area through which the exposure light is projected; forming a resist film on a substrate; light-exposing a predetermined first region of said resist film through a projection exposure optical system by using the mask which includes first and second portions, said first portion being an element formation chip section including a semitransparent phase shifting region, and said second portion having a semitransparent phase shifting pattern and a transparent pattern arranged in an alternating and periodic pattern with a predetermined repeated pitch, wherein light that has passed through the alternating and periodic pattern of the semitransparent phase shifting pattern and the transparent pattern of said second portion has an intensity on the resist film that is smaller than an intensity on the resist film of light that has passed through the semitransparent phase shifting region of said first portion; wherein said semitransparent phase shifting region and said semitransparent phase shifting pattern are semitransparent with respect to exposure light, said transparent pattern is transparent with respect to exposure light, light that has passed through said semitransparent phase shifting region and said semitransparent phase shifting pattern is substantially 180 degrees out of phase with respect to light that has passed through said transparent pattern, and wherein said second portion is disposed at a peripheral portion of said element formation chip section within said mask; moving said substrate in a direction so as to enable light-exposure of a second region of said resist film by using said mask; and light-exposing the second region of said resist film through the projection exposure optical system by using said mask.
Claim 16
Dependent Claim
28 words
A pattern forming method according to claim 10, wherein the predetermined repeated pitch is equal to or smaller than a critical resolution of the projection exposure optical system.
Claim 17
Dependent Claim
28 words
A pattern forming method according to claim 10, wherein the transmittance of said semitransparent phase shifting region with respect to the exposure light is not higher than 25%.
Claim 18
Dependent Claim
81 words
A semitransparent phase shifting mask, comprising: a first semitransparent phase shifting pattern having a semitransparent phase shifting film formed at a predetermined position on a photomask substrate; and a light shielding area provided at a peripheral edge portion of said first semitransparent phase shifting pattern and serving to make an intensity of light having passed through said light shielding area smaller than an intensity of light having passed through said first semitransparent phase shifting film, as measured on a to-be-exposed target.
Claim 19
Dependent Claim
81 words
A semitransparent phase shifting mask, comprising: a first semitransparent phase shifting pattern having a semitransparent phase shifting film formed at a predetermined position on a photomask substrate; and a light shielding area provided at a peripheral edge portion of said first semitransparent phase shifting pattern and serving to make an intensity of light having passed through said light shielding area smaller than an intensity of light having passed through said first semitransparent phase shifting film, as measured on a to-be-exposed target.
Claim 20
Dependent Claim
50 words
A semitransparent phase shifting mask according to claim 13, wherein said light shielding area includes a second semitransparent phase shifting pattern having a semitransparent phase shifting portion and a transparent portion, said second semitransparent phase shifting pattern being comprised of a pattern beyond a critical resolution of an exposure apparatus.
Claim 21
Dependent Claim
54 words
A semitransparent phase shifting mask according to claim 14, wherein a ratio a of an area of said transparent portion to an area of said semitransparent phase shifting portion is defined as a=β√T where T represents a transmittance of said semitransparent phase shifting portion, and β represents a value in a range from 0.5≦β≦2.0.
Claim 22
Dependent Claim
32 words
A semitransparent phase shifting mask according to claim 15, wherein said semitransparent phase shifting portion is provided along the whole of a peripheral edge portion of said first semitransparent phase shifting pattern.
Claim 23
Independent Claim
101 words
A method of manufacturing a semitransparent phase shifting mask, comprising the steps of: forming a semitransparent phase shifting pattern at a predetermined position on a photomask, said semitransparent phase shifting pattern including a semitransparent phase shifting film having an exposure light transmittance not higher than 25%; and forming a light shielding area at a peripheral edge portion of said semitransparent phase shifting pattern, wherein an intensity of light on a to-be-exposed member after said light has passed through said light shielding area, is lower than that on the to-be-exposed member after said light has passed through said semitransparent phase shifting film.
Claim 24
Independent Claim
101 words
A method of manufacturing a semitransparent phase shifting mask, comprising the steps of: forming a semitransparent phase shifting pattern at a predetermined position on a photomask, said semitransparent phase shifting pattern including a semitransparent phase shifting film having an exposure light transmittance not higher than 25%; and forming a light shielding area at a peripheral edge portion of said semitransparent phase shifting pattern, wherein an intensity of light on a to-be-exposed member after said light has passed through said light shielding area, is lower than that on the to-be-exposed member after said light has passed through said semitransparent phase shifting film.
Claim 25
Dependent Claim
25 words
A method according to claim 17, wherein said semitransparent phase shifting pattern includes a lamination of a semitransparent film and a transparent phase shifting film.
Claim 26
Dependent Claim
25 words
A method according to claim 17, wherein said semitransparent film is a chromium film and said transparent phase shifting film is a silicon oxide film.
Claim 27
Dependent Claim
27 words
A method according to claim 18, wherein said semitransparent phase shifting film is a metal film, a silicide film, a metal oxide film or a nitride film.
References Cited (Backward Citations)
US4360586A
Cited
JPS6250811A
Cited
US4890309A
Cited
JPH03144453A
Cited
JPH03269532A
Cited
US5328807A
Cited
JPH04136854A
Cited
US5364716A
Cited
US5429896A
Cited
US5578421A
Cited
US5656400A
Cited
US5429897A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-12-21 | 2002-06-22 | 2002-12-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-12-21 | 2006-06-22 | 2006-12-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-12-21 | 2010-06-22 | 2010-12-22 | $7700.00 | Window Closed / Lapsed |