US5841930A
Expired / Lapsed
US
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Semiconductor optical waveguide
Assignee: Nortel Networks Ltd
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Filing: 1997-07-24
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Granted: 1998-11-24
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Expires: 2017-07-24
Abstract
Abstract A channel waveguide structure which can be incorporated into VLSI (very large scale integration) integrated circuits uses a SiGe (silicon germanium) alloy core and Si (silicon) top and bottom cladding layers. The core may consist of only a SiGe alloy layer or it may be formed as a superlattice containing Si layers alternating with SiGe alloy layers. LOCOS (locally oxidized silicon) regions are formed on the top cladding layer at spaced locations thereby defining lateral boundaries of channels in the core.
Inventors
- 👤 Stephen J. Kovacic
- 👤 Jugnu J. Ojha
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:53
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/121; H10F71/1215; G; G02; G02B; G02B6/00; G02B6/10; G02B6/12; G02B6/12004; G02B6/122; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/223; H10F77/00; H10F77/40; H10F77/413; G02B2006/12035; G02B2006/12061; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
149 words
A semiconductor optical channel waveguide comprising: a silicon substrate; a bottom cladding layer made of silicon formed on the silicon substrate; a top cladding layer made of silicon; a core formed between the bottom cladding layer and the top cladding layer and comprising at least one layer of a silicon semiconductor alloy, the core having a predetermined increase in the index of refraction relative to the top and bottom cladding layers; and first and second spaced trench regions extending through at least a portion of the top cladding layer and filled with a material, the material having an index of refraction less than that of the cladding in the case the trenches do not penetrate the core, the material having an index of refraction less than that of the core in the case the trenches do penetrate the core, thereby defining lateral boundaries of a channel in the core.
Claim 2
Dependent Claim
149 words
A semiconductor optical channel waveguide comprising: a silicon substrate; a bottom cladding layer made of silicon formed on the silicon substrate; a top cladding layer made of silicon; a core formed between the bottom cladding layer and the top cladding layer and comprising at least one layer of a silicon semiconductor alloy, the core having a predetermined increase in the index of refraction relative to the top and bottom cladding layers; and first and second spaced trench regions extending through at least a portion of the top cladding layer and filled with a material, the material having an index of refraction less than that of the cladding in the case the trenches do not penetrate the core, the material having an index of refraction less than that of the core in the case the trenches do penetrate the core, thereby defining lateral boundaries of a channel in the core.
Claim 3
Dependent Claim
21 words
A structure according to claim 1 wherein the layers within the core comprise a crystal which is substantially free of dislocations.
Claim 4
Dependent Claim
19 words
A structure according to claim 2 wherein the trench regions extend through the bottom cladding layer to the substrate.
Claim 5
Dependent Claim
20 words
A structure according to claim 3 wherein the core is formed of a single layer of a silicon semiconductor alloy.
Claim 6
Dependent Claim
23 words
A structure according to claim 3 wherein the core comprises a series of layers each of which is silicon or a silicon alloy.
Claim 7
Dependent Claim
21 words
A structure according to claim 5 wherein the series of layers comprise layers of silicon alternating with layers of silicon alloy.
Claim 8
Dependent Claim
14 words
A structure according to claim 5 wherein the series of layers comprise a superlattice.
Claim 9
Dependent Claim
16 words
A structure according to claim 5 wherein the series of layers comprise a multiple quantum well.
Claim 10
Dependent Claim
43 words
A structure according to claim 4 wherein the silicon alloy in the core is Si 1-x Ge x where x is in the range 1>x>0, and where x is selected to provide said predetermined increase in the index of refraction in the core.
Claim 11
Dependent Claim
43 words
A structure according to claim 5 wherein the silicon alloy in the core is Si 1-x Ge x where x is in the range 1>x>0, and where x is selected to provide said predetermined increase in the index of refraction in the core.
Claim 12
Dependent Claim
43 words
A structure according to claim 6 wherein the silicon alloy in the core is Si 1-x Ge x where x is in the range 1>x>0, and where x is selected to provide said predetermined increase in the index of refraction in the core.
Claim 13
Dependent Claim
43 words
A structure according to claim 7 wherein the silicon alloy in the core is Si 1-x Ge x where x is in the range 1>x>0, and where x is selected to provide said predetermined increase in the index of refraction in the core.
Claim 14
Dependent Claim
40 words
A structure according to claim 4 wherein the silicon alloy is Si 1-x Ge x where x is in the range 0.01-0.1, and where x is selected to provide said predetermined increase in the index of refraction in the core.
Claim 15
Dependent Claim
40 words
A structure according to claim 5 wherein the silicon alloy is Si 1-x Ge x where x is in the range 0.01-0.1, and where x is selected to provide said predetermined increase in the index of refraction in the core.
Claim 16
Dependent Claim
40 words
A structure according to claim 6 wherein the silicon alloy is Si 1-x Ge x where x is in the range 0.01-0.1, and where x is selected to provide said predetermined increase in the index of refraction in the core.
Claim 17
Dependent Claim
40 words
A structure according to claim 7 wherein the silicon alloy is Si 1-x Ge x where x is in the range 0.01-0.1, and where x is selected to provide said predetermined increase in the index of refraction in the core.
Claim 18
Dependent Claim
21 words
A structure according to claim 3 wherein the core and cladding layers comprise a crystal which is substantially free of dislocations.
Claim 19
Dependent Claim
25 words
A structure according to claim 17 wherein regions of n+doping or regions of p+doping are buried in the bottom cladding layer or in the substrate.
Claim 20
Dependent Claim
24 words
A structure according to claim 17 wherein a layer of n+doping or p+doping is buried in the bottom cladding layer or in the substrate.
Claim 21
Dependent Claim
57 words
A structure according to claim 17 wherein a region of n+doping is buried in the bottom cladding layer or in the substrate; the bottom cladding layer, core layer and top cladding layer are n-doped; further comprising a p+doped layer of silicon overlying said top cladding layer above said buried n+doped region; thereby forming a P-i-N photodetector diode.
Claim 22
Dependent Claim
57 words
A structure according to claim 17 wherein a region of p+doping is buried in the bottom cladding layer or in the substrate; the bottom cladding layer, core layer and top cladding layer are n-doped; further comprising a n+doped layer of silicon overlying said top cladding layer above said buried n+doped region; thereby forming a N-i-P photodetector diode.
Claim 23
Dependent Claim
19 words
A structure according to claim 17 wherein the bottom cladding layer, core layer and top cladding layer are n-doped.
Claim 24
Dependent Claim
15 words
The structure according to claim 3 wherein the trench regions are filled with silicon dioxide.
Claim 25
Dependent Claim
20 words
The structure according to claim 3 wherein the trench regions have a silicon oxide liner and are filled with polysilicon.
Claim 26
Dependent Claim
15 words
The structure according to claim 3 wherein the trench regions are filled with a polymer.
Claim 27
Dependent Claim
151 words
A semiconductor optical channel waveguide comprising: a substrate; a bottom cladding layer made of silicon or a silicon alloy; a top cladding layer made of silicon or a silicon alloy; a core formed between the bottom cladding layer and the top cladding layer and comprising at least one layer of a silicon semiconductor alloy, the core having a predetermined increase in the index of refraction relative to the top and bottom cladding layers; and first and second spaced trench regions extending through at least a portion of the top cladding layer and filled with a material, the material having an index of refraction less than that of the cladding in the case the trenches do not penetrate the core, the material having an index of refraction less than that of the core in the case the trenches do penetrate the core, thereby defining lateral boundaries of a channel in the core.
Claim 28
Dependent Claim
151 words
A semiconductor optical channel waveguide comprising: a substrate; a bottom cladding layer made of silicon or a silicon alloy; a top cladding layer made of silicon or a silicon alloy; a core formed between the bottom cladding layer and the top cladding layer and comprising at least one layer of a silicon semiconductor alloy, the core having a predetermined increase in the index of refraction relative to the top and bottom cladding layers; and first and second spaced trench regions extending through at least a portion of the top cladding layer and filled with a material, the material having an index of refraction less than that of the cladding in the case the trenches do not penetrate the core, the material having an index of refraction less than that of the core in the case the trenches do penetrate the core, thereby defining lateral boundaries of a channel in the core.
Claim 29
Dependent Claim
15 words
The structure according to claim 26 wherein the trench regions are filled with silicon dioxide.
Claim 30
Dependent Claim
20 words
The structure according to claim 26 wherein the trench regions have a silicon oxide liner and are filled with polysilicon.
Claim 31
Dependent Claim
15 words
The structure according to claim 26 wherein the trench regions are filled with a polymer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-11-23 | 2002-05-25 | 2002-11-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-11-23 | 2006-05-25 | 2006-11-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-11-23 | 2010-05-25 | 2010-11-24 | $7700.00 | Window Closed / Lapsed |