US5521994A
Expired / Lapsed
US
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Semiconductor optical waveguide-integrated light-receiving device
Assignee: NEC Corp
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Filing: 1995-06-07
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Granted: 1996-05-28
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Expires: 2015-06-07
Abstract
Abstract Disclosed herein is a semiconductor optical waveguide-integrated light-receiving device comprising a waveguide-type photodetector and a passive optical waveguide which are selectively formed on the same substrate, wherein the width of mask for a selective growth is varied along the waveguiding direction so as to simultaneously form core layers which differ from each other in absorption edge wavelength. The core layer may be formed with an MQW layer. It is also featured that waveguide width of the photodetector is made larger than the waveguide width of the optical waveguide. The photodetector and the optical waveguide may be buried by an n--InP layer.
Inventors
- 👤 Takeshi Takeuchi
- 👤 Kenko Taguchi
- 👤 Keiro Komatsu
- 👤 Masako Yamamoto
- 👤 Kiichi Hamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 10:25
CPC Classifications
G; G02; G02B; G02B6/00; G02B6/24; G02B6/42; B; B82; B82Y; B82Y20/00; H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/222; H10F77/00; H10F77/10; H10F77/14; H10F77/146
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
141 words
A semiconductor optical waveguide-integrated light-receiving device comprising; a waveguide-type light-receiving device portion and a passive waveguide portion, said waveguide-type light-receiving device containing a light-absorbing layer, and being connected to a distal end of said passive waveguide, said waveguide-type light-receiving device portion and said passive waveguide device portion both comprising a semiconductor multi-layered waveguide structure having at least a core layer and a clad layer formed on a semiconductor substrate in the mentioned order, said multi-layered waveguide being continuously formed without said core layer being interrupted at the connecting portion between said passive waveguide and said waveguide-type light-receiving device, wherein an absorption edge wavelength of said core layer of said waveguide-type light receiving device is made longer than the absorption edge wavelength of said core layer of said passive waveguide so as to absorb light incident into said waveguide-type light receiving device.
Claim 2
Dependent Claim
141 words
A semiconductor optical waveguide-integrated light-receiving device comprising; a waveguide-type light-receiving device portion and a passive waveguide portion, said waveguide-type light-receiving device containing a light-absorbing layer, and being connected to a distal end of said passive waveguide, said waveguide-type light-receiving device portion and said passive waveguide device portion both comprising a semiconductor multi-layered waveguide structure having at least a core layer and a clad layer formed on a semiconductor substrate in the mentioned order, said multi-layered waveguide being continuously formed without said core layer being interrupted at the connecting portion between said passive waveguide and said waveguide-type light-receiving device, wherein an absorption edge wavelength of said core layer of said waveguide-type light receiving device is made longer than the absorption edge wavelength of said core layer of said passive waveguide so as to absorb light incident into said waveguide-type light receiving device.
Claim 3
Dependent Claim
36 words
The semiconductor optical waveguide-integrated light-receiving device according to claim 1, wherein said waveguide-type light receiving device constitutes a photodiode wherein said core layer of the waveguide-type light receiving device is utilized as a light absorbing layer.
Claim 4
Dependent Claim
174 words
A semiconductor optical waveguide-integrated light-receiving device comprising; a waveguide-type light-receiving device portion and a passive waveguide portion, said waveguide-type light-receiving device containing a light absorbing layer, and being connected to a distal end of said passive waveguide, said waveguide-type light-receiving device portion and said passive waveguide device portion both comprising a semiconductor multi-layered waveguide structure having at least a core layer and a clad layer formed on a semiconductor substrate in the mentioned order, said core layer being formed of multiple quantum wells constituted by a multi-layered film comprising a plurality of semiconductor layers, said plurality of semiconductor layers having a composition different from one another, said multi-layered waveguide being continuously formed without said core layer being interrupted at the connecting portion between said passive waveguide and said waveguide-type light-receiving device, wherein an absorption edge wavelength of said core layer of said waveguide-type light receiving device is made longer than the absorption edge wavelength of said core layer of said passive waveguide so as to absorb light incident into said waveguide-type light receiving device.
Claim 5
Dependent Claim
174 words
A semiconductor optical waveguide-integrated light-receiving device comprising; a waveguide-type light-receiving device portion and a passive waveguide portion, said waveguide-type light-receiving device containing a light absorbing layer, and being connected to a distal end of said passive waveguide, said waveguide-type light-receiving device portion and said passive waveguide device portion both comprising a semiconductor multi-layered waveguide structure having at least a core layer and a clad layer formed on a semiconductor substrate in the mentioned order, said core layer being formed of multiple quantum wells constituted by a multi-layered film comprising a plurality of semiconductor layers, said plurality of semiconductor layers having a composition different from one another, said multi-layered waveguide being continuously formed without said core layer being interrupted at the connecting portion between said passive waveguide and said waveguide-type light-receiving device, wherein an absorption edge wavelength of said core layer of said waveguide-type light receiving device is made longer than the absorption edge wavelength of said core layer of said passive waveguide so as to absorb light incident into said waveguide-type light receiving device.
Claim 6
Dependent Claim
36 words
The semiconductor optical waveguide-integrated light-receiving device according to claim 3, wherein said waveguide-type light receiving device comprises a photodiode wherein said core layer of the waveguide-type light receiving device is utilized as a light absorbing layer.
Claim 7
Dependent Claim
50 words
The semiconductor optical waveguide-integrated light-receiving device according to claim 1, wherein the width of said core layer of said waveguide-type light receiving device measured in a plane parallel to said waveguide layers is larger than a width of said core layer of said passive waveguide measured in the same direction.
Claim 8
Dependent Claim
36 words
The semiconductor optical waveguide-integrated light-receiving device according to claim 5, wherein said waveguide-type light receiving device comprises a photodiode wherein said core layer of the waveguide-type light receiving device is utilized as a light absorbing layer.
Claim 9
Dependent Claim
49 words
The semiconductor optical waveguide-integrated light-receiving device according to claim 1, wherein said multi-layered waveguide structure is buried in a semiconductor burying layer having the same conductivity as said multi-layered waveguide structure, and wherein a p-n junction for detecting light is selectively formed after formation of said semiconductor burying layer.
Claim 10
Dependent Claim
49 words
The semiconductor optical waveguide-integrated light-receiving device according to claim 3, wherein said multi-layered waveguide structure is buried in a semiconductor burying layer having the same conductivity as said multi-layered waveguide structure, and wherein a p-n junction for detecting light is selectively formed after formation of said semiconductor burying layer.
Claim 11
Dependent Claim
49 words
The semiconductor optical waveguide-integrated light-receiving device according to claim 5, wherein said multi-layered waveguide structure is buried in a semiconductor burying layer having the same conductivity as said multi-layered waveguide structure, and wherein a p-n junction for detecting light is selectively formed after formation of said semiconductor burying layer.
Claim 12
Dependent Claim
35 words
The semiconductor optical waveguide-integrated light-receiving device according to claim 1, wherein said passive waveguide and said waveguide-type light-receiving device are selectively formed in a region surrounded by a stripe-shaped mask formed on said semiconductor substrate.
Claim 13
Dependent Claim
35 words
The semiconductor optical waveguide-integrated light-receiving device according to claim 9, wherein said passive waveguide and said waveguide-type light-receiving device are selectively formed in a region surrounded by a stripe-shaped mask formed on said semiconductor substrate.
Claim 14
Dependent Claim
36 words
The semiconductor optical waveguide-integrated light-receiving device according to claim 11, wherein said waveguide-type light receiving device comprises a photodiode wherein said core layer of the waveguide-type light receiving device is utilized as a light absorbing layer.
References Cited (Backward Citations)
US4893313A
Cited
US5252852A
Cited
US5111469A
Cited
US5121182A
Cited
US5054871A
Cited
JPH04243216A
Cited
US5331659A
Cited
US5321779A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-05-28 | 1999-11-27 | 2000-05-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-05-28 | 2003-11-27 | 2004-05-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-05-28 | 2007-11-27 | 2008-05-28 | $7700.00 | Window Closed / Lapsed |