Abstract On an n-InP substrate (101), a mask (102) having a first portion (102a) and a second portion (102b) is formed. The mask (102) has a first gap (NG) at the first portion (102a). A width of the second portion (102b) is greater than a width of the first portion (102a). A core layer (120) is epitaxially grown selectively on the substrate (101) at an area corresponding to the first gap (NG). The first gap (NG) is widened and an additional gap (AG) is formed at the second portion (102b) to form a second gap (WG) comprising the first gap after widened and the additional gap (AG). A clad layer (106) is epitaxially grown on the substrate (101) at an area corresponding to the second gap (WG) so as to cover the core layer (120). A difference in width between the first portion (102a) and the second portion (102b) is set so that a thickness of the clad layer at an area corresponding to the second portion (102b) becomes equal to a thickness of the clad layer (106) at an area corresponding to the first portion (102a). A structure of the semiconductor optical waveguide comprising a window structure region in which the reflection of the guided light is small is provided with good controllability and reliability and with high yield.
A semiconductor optical waveguide, comprising: a semiconductor substrate; a window region positioned at a light emitting end; a non-window region positioned adjacent to said window region; a core layer formed on said semiconductor substrate at said non-window region but not formed at said window region; a clad layer formed on said semiconductor substrate at both said window region and said non-window region, said core layer being covered with said clad layer at said non-window region, wherein a thickness of said clad layer at said window region is equal to or greater than a thickness of said clad layer at said non-window region.
Claim 2
Dependent Claim
102 words
A semiconductor optical waveguide, comprising: a semiconductor substrate; a window region positioned at a light emitting end; a non-window region positioned adjacent to said window region; a core layer formed on said semiconductor substrate at said non-window region but not formed at said window region; a clad layer formed on said semiconductor substrate at both said window region and said non-window region, said core layer being covered with said clad layer at said non-window region, wherein a thickness of said clad layer at said window region is equal to or greater than a thickness of said clad layer at said non-window region.
Claim 3
Dependent Claim
29 words
A semiconductor optical waveguide as set forth in claim 1, wherein a surface of said clad layer has no level difference between said window region and said non-window region.
Claim 4
Dependent Claim
23 words
A semiconductor optical waveguide as set forth in claim 1, wherein said core layer comprises a light guiding layer and an active layer.
Claim 5
Dependent Claim
27 words
A semiconductor optical waveguide as set forth in claim 1, wherein said window region is a window region of a distributed feed-back laser diode integrated optical modulator.
Claim 6
Dependent Claim
27 words
A semiconductor optical waveguide as set forth in claim 1, wherein a band gap energy of said window region is greater than a light to be guided.
Claim 7
Dependent Claim
25 words
The semiconductor optical waveguide as set forth in claim 1, wherein said core layer is formed on said semiconductor substrate at only said non-window region.