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US5834357A
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US
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Fabricating method of making a fin shaped capacitor
Assignee: Mosaid Technologies Inc
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Filing: 1995-10-30
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Granted: 1998-11-10
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Expires: 2015-10-30
Abstract
Abstract A capacitor includes a first electrode in which a first material layer composed of a conductive oxide and a second material layer formed of a conductive material are alternately stacked. The side surface of the second material layer is recessed to form a fin-shaped structure and the second material layer is etched to have a width shorter than that of the first material layer. The capacitor also includes a second electrode and a dielectric material formed between the first electrode and the second electrode.
Inventors
- 👤 Chang-seok Kang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:39
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B12/30; H10B12/31; H10B12/318; H10D; H10D1/00; H10D1/01; H10D1/041; H10D1/042; H10D1/043; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/714; H10D1/682
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
98 words
A method of fabricating a capacitor including the steps of: alternately stacking one or more first material layers comprising a conductive oxide and one or more second material layers comprising a conductive substance; selectively etching the one or more second material layers to form a fin-shaped first electrode, the first electrode comprising the one or more first material layers and the selectively-etched one or more second material layers; forming a dielectric material on the first electrode; and forming a second electrode on the dielectric material, the second electrode being insulated from the first electrode by the dielectric material.
Claim 2
Independent Claim
98 words
A method of fabricating a capacitor including the steps of: alternately stacking one or more first material layers comprising a conductive oxide and one or more second material layers comprising a conductive substance; selectively etching the one or more second material layers to form a fin-shaped first electrode, the first electrode comprising the one or more first material layers and the selectively-etched one or more second material layers; forming a dielectric material on the first electrode; and forming a second electrode on the dielectric material, the second electrode being insulated from the first electrode by the dielectric material.
Claim 3
Dependent Claim
36 words
A method of fabricating a capacitor according to claim 1, wherein the etching step is performed by an etching liquid or etching gas having different etching rates with respect to the first and second metal layers.
Claim 4
Dependent Claim
33 words
A method of fabricating a capacitor according to claim 1, further including the step of patterning the stacked one or more first material layers and one or more second material layers by photolithography.
Claim 5
Dependent Claim
31 words
A method of fabricating a capacitor according to claim 1, further including a step of oxidizing exposed surfaces of the one or more second material layers comprising the fin-shaped first electrode.
Claim 6
Dependent Claim
26 words
A method of fabricating a capacitor according to claim 4, wherein the thickness of an oxide layer formed in the oxidizing step is between 50-200 Å.
Claim 7
Dependent Claim
41 words
A method of fabricating a capacitor according to claim 1, wherein the one or more first material layers of the first electrode comprise a material selected from the group consisting of ruthenium oxide, indium tin oxide, osmium oxide, and iridium oxide.
Claim 8
Dependent Claim
41 words
A method of fabricating a capacitor according to claim 1, wherein the one or more second material layers of the first electrode comprise a material selected is from the group consisting of Pt, Pd, Ir, Ru, Os, Al, Ti, and Ta.
Claim 9
Dependent Claim
65 words
A method of fabricating a capacitor according to claim 1, wherein the dielectric material comprises a material selected from the group consisting of PZT(Pb(Zr,Ti)O 3 ), PLZT((Pb,La)(ZrTi)O 3 ), lead zirconate, BST(BaSrTiO 3 ), STO(SrTiO 3 ), tantalum pentoxide, silicon oxide, ONO(oxide-nitride-oxide), titanium silicate, Bi 3 Ti 4 O 12 , silicon nitride, titanium oxide, lead titanate, and SrBi 2 Ta 2 O 9 .
Claim 10
Dependent Claim
28 words
A method of fabricating a capacitor according to claim 1, wherein the second electrode comprises a material selected from the group consisting of Ru, Pt, Ti, and Ir.
Claim 11
Dependent Claim
52 words
A method of fabricating a capacitor according to claim 1, wherein the method of fabricating a capacitor further includes the steps of: forming a conductive plug electrically connecting the first electrode to a source region on a semiconductor substrate; and forming a diffusion barrier between the first electrode and the conductive plug.
Claim 12
Independent Claim
90 words
A method of fabricating a capacitor, including the steps of: alternately stacking one or more first material layers comprising a conductive oxide and one or more second material layers comprising a conductive substance; selectively etching the one or more second material layers to form a fin-shaped first electrode; forming a dielectric material on the first electrode; and forming a second electrode on the dielectric material, wherein the step of alternately stacking one or more first material layers and one or more second material layers is performed by a sputtering process.
Claim 13
Independent Claim
90 words
A method of fabricating a capacitor, including the steps of: alternately stacking one or more first material layers comprising a conductive oxide and one or more second material layers comprising a conductive substance; selectively etching the one or more second material layers to form a fin-shaped first electrode; forming a dielectric material on the first electrode; and forming a second electrode on the dielectric material, wherein the step of alternately stacking one or more first material layers and one or more second material layers is performed by a sputtering process.
Claim 14
Dependent Claim
65 words
A method of fabricating a capacitor according to claim 11, wherein the sputtering process is carried out by repeating at least one time the steps of: forming a metal layer; and forming a metal oxide layer, wherein a first target comprised of the metal and a second target comprised of the metal oxide are mounted on a sputtering device used to perform both forming steps.
Claim 15
Dependent Claim
87 words
A method of fabricating a capacitor according to claim 11, wherein the sputtering process is carried out by repeating at least one time the steps of: forming a metal oxide layer by sputtering in an atmosphere comprising a mixture of oxygen and an inert gas; discharging the oxygen from a sputtering chamber; and forming a metal layer by sputtering in an atmosphere of only the inert gas, wherein only a target composed of the metal is mounted on the sputtering device used to perform both forming steps.
Claim 16
Dependent Claim
40 words
A method of fabricating a capacitor according to claim 11, wherein the one or more first material layers are comprised of RuO 2 or IrO 2 and the one or more second material layers are comprised of Ru or Ir.
Claim 17
Dependent Claim
34 words
A method of fabricating a capacitor according to claim 1, wherein the one or more first material layers and the one or more second material layers are stacked by a chemical vapor deposition method.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2001-11-09 | 2002-05-11 | 2002-11-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-11-09 | 2006-05-11 | 2006-11-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-11-09 | 2010-05-11 | 2010-11-10 | $7700.00 | Window Closed / Lapsed |