US5830784A
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Method for producing a semiconductor device including doping with a group IV element
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1996-09-19
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Granted: 1998-11-03
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Expires: 2016-09-19
Abstract
Abstract A silicon film provided on a blocking film 102 on a substrate 101 is made amorphous by doping Si+, and in a heat-annealing process, crystallization is started in parallel to a substrate from an area 100 where lead serving as a crystallization-promoting catalyst is introduced.
Inventors
- 👤 Hongyong Zhang
- 👤 Toru Takayama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 11:28
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3238; H10P14/3241; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3456; H10P14/3806; H10P14/3808; H10P14/3816
Claims Analysis
Total Claims: 40
Claim 1
Independent Claim
119 words
A method for manufacturing a semiconductor device comprising the steps of: disposing a catalyst containing material in contact with a selected region of a semiconductor film on an insulating surface of a substrate to be crystallized, said catalyst being selected from the IV group; crystallizing said semiconductor film by heating where needle or pillar crystals extend from said selected region in parallel with said insulating surface; patterning said semiconductor film into an island after said step of crystallization thereof; and forming a channel region of a thin film transistor in said island, wherein said island is so arranged that said needle or pillar crystals extend in a direction which is in parallel with a direction of said channel region.
Claim 2
Independent Claim
119 words
A method for manufacturing a semiconductor device comprising the steps of: disposing a catalyst containing material in contact with a selected region of a semiconductor film on an insulating surface of a substrate to be crystallized, said catalyst being selected from the IV group; crystallizing said semiconductor film by heating where needle or pillar crystals extend from said selected region in parallel with said insulating surface; patterning said semiconductor film into an island after said step of crystallization thereof; and forming a channel region of a thin film transistor in said island, wherein said island is so arranged that said needle or pillar crystals extend in a direction which is in parallel with a direction of said channel region.
Claim 3
Dependent Claim
28 words
The method of claim 1 further comprising the step of irradiating said semiconductor layer with light in order to further crystallize said semiconductor layer after said heat annealing.
Claim 4
Dependent Claim
27 words
A method according to claim 1 wherein said direction of said channel region is a direction linking a source region to a drain region of said transistor.
Claim 5
Dependent Claim
30 words
The method of claim 1 wherein the concentration of said catalyst in said selected region of the semiconductor layer is 1×10 15 atoms/cm 3 to 5×10 19 atoms/cm 3 .
Claim 6
Independent Claim
115 words
A method for manufacturing a semiconductor device comprising the steps of: disposing a catalyst containing material in contact with a selected region of a semiconductor film on an insulating surface of a substrate to be crystallized, said catalyst being selected from the group IV; crystallizing said semiconductor film by heating where needle or pillar crystals extend from said selected region in parallel with said insulating surface; patterning said semiconductor film into an island after said step of crystallization thereof; and forming a channel region of a thin film transistor in said island, wherein said needle or pillar crystals extend in a direction which is at a fixed angle with a direction of said channel region.
Claim 7
Independent Claim
115 words
A method for manufacturing a semiconductor device comprising the steps of: disposing a catalyst containing material in contact with a selected region of a semiconductor film on an insulating surface of a substrate to be crystallized, said catalyst being selected from the group IV; crystallizing said semiconductor film by heating where needle or pillar crystals extend from said selected region in parallel with said insulating surface; patterning said semiconductor film into an island after said step of crystallization thereof; and forming a channel region of a thin film transistor in said island, wherein said needle or pillar crystals extend in a direction which is at a fixed angle with a direction of said channel region.
Claim 8
Dependent Claim
27 words
A method according to claim 5 wherein said direction of said channel region is a direction linking a source region to a drain region of said transistor.
Claim 9
Dependent Claim
20 words
The method of claim 5, comprising the further step of irradiating said semiconductor layer with light after said heat annealing.
Claim 10
Dependent Claim
30 words
The method of claim 5 wherein the concentration of said catalyst in said selected region of the semiconductor layer is 1×10 15 atoms/cm 3 to 5×10 19 atoms/cm 3 .
Claim 11
Independent Claim
129 words
A method of manufacturing a thin film transistor comprising the steps of: disposing a catalyst containing material in contact with a selected region of a semiconductor film on an insulating surface of a substrate to be crystallized, said catalyst being selected from the group IV; crystallizing said semiconductor film by heating where needle or pillar crystals extend from said selected region in parallel with said insulating surface; patterning said semiconductor film into an island after said step of crystallization thereof; and forming a channel region of said transistor in said island, wherein said step of patterning said semiconductor film is conducted in such a manner that a direction in which said needle or pillar crystals extend is in coincidence with a direction in which carriers of said transistor flow.
Claim 12
Independent Claim
129 words
A method of manufacturing a thin film transistor comprising the steps of: disposing a catalyst containing material in contact with a selected region of a semiconductor film on an insulating surface of a substrate to be crystallized, said catalyst being selected from the group IV; crystallizing said semiconductor film by heating where needle or pillar crystals extend from said selected region in parallel with said insulating surface; patterning said semiconductor film into an island after said step of crystallization thereof; and forming a channel region of said transistor in said island, wherein said step of patterning said semiconductor film is conducted in such a manner that a direction in which said needle or pillar crystals extend is in coincidence with a direction in which carriers of said transistor flow.
Claim 13
Dependent Claim
21 words
The method of claim 9 further comprising a step of recrystallizing said semiconductor layer by light irradiation after said heat annealing.
Claim 14
Dependent Claim
30 words
The method of claim 9 wherein the concentration of said catalyst in said selected region of the semiconductor layer is 1×10 15 atoms/cm 3 to 5×10 19 atoms/cm 3 .
Claim 15
Independent Claim
132 words
A method of manufacturing a semiconductor device comprising the steps of: disposing a catalyst containing material in contact with a selected region of a semiconductor film on an insulating surface of a substrate to be crystallized, said catalyst being selected from the group IV; crystallizing said semiconductor film by heating where needle or pillar crystals extend from said selected region in parallel with said insulating surface; patterning said semiconductor film into an island after said step of crystallization thereof; and forming a channel region of a thin film transistor in said island, wherein the step of patterning said semiconductor film is conducted in such a manner that said needle or pillar crystals extend in a direction which is at a fixed angle with a direction in which carriers of said transistor flow.
Claim 16
Independent Claim
132 words
A method of manufacturing a semiconductor device comprising the steps of: disposing a catalyst containing material in contact with a selected region of a semiconductor film on an insulating surface of a substrate to be crystallized, said catalyst being selected from the group IV; crystallizing said semiconductor film by heating where needle or pillar crystals extend from said selected region in parallel with said insulating surface; patterning said semiconductor film into an island after said step of crystallization thereof; and forming a channel region of a thin film transistor in said island, wherein the step of patterning said semiconductor film is conducted in such a manner that said needle or pillar crystals extend in a direction which is at a fixed angle with a direction in which carriers of said transistor flow.
Claim 17
Dependent Claim
30 words
The method of claim 12 wherein the concentration of said catalyst in said selected region of the semiconductor layer is 1×10 15 atoms/cm 3 to 5×10 19 atoms/cm 3 .
Claim 18
Independent Claim
114 words
A method of manufacturing a semiconductor device comprising the steps of: disposing a catalyst containing material in contact with a selected region of a semiconductor film on an insulating surface of a substrate to be crystallized, said catalyst being selected from the group IV; crystallizing said semiconductor film by heating where crystals extend from said selected region in parallel with said insulating surface; patterning said semiconductor film into an island after said step of crystallization thereof; and forming a channel region of a thin film transistor in said island, wherein said channel region includes grain boundaries, which extend in a direction that is coincidence with a direction of a channel region of said transistor.
Claim 19
Independent Claim
114 words
A method of manufacturing a semiconductor device comprising the steps of: disposing a catalyst containing material in contact with a selected region of a semiconductor film on an insulating surface of a substrate to be crystallized, said catalyst being selected from the group IV; crystallizing said semiconductor film by heating where crystals extend from said selected region in parallel with said insulating surface; patterning said semiconductor film into an island after said step of crystallization thereof; and forming a channel region of a thin film transistor in said island, wherein said channel region includes grain boundaries, which extend in a direction that is coincidence with a direction of a channel region of said transistor.
Claim 20
Dependent Claim
12 words
The method of claim 14 wherein said light is a laser light.
Claim 21
Dependent Claim
14 words
The method of claim 14 wherein said light is emitted from a flash lamp.
Claim 22
Dependent Claim
27 words
A method according to claim 14 wherein said direction of said channel region is a direction linking a source region to a drain region of said transistor.
Claim 23
Dependent Claim
30 words
The method of claim 14 wherein the concentration of said catalyst in said selected region of the semiconductor layer is 1×10 15 atoms/cm 3 to 5×10 19 atoms/cm 3 .
Claim 24
Independent Claim
116 words
A method for manufacturing a semiconductor device comprising the steps of: forming an insulating layer on a glass substrate; disposing a catalyst containing material in contact with a selected region of a semiconductor film on said insulating layer, said catalyst being selected from the group IV; crystallizing said semiconductor film by heating where crystals extend from said selected region in parallel with said insulating surface; patterning said semiconductor film into an island after said step of crystallization thereof; and forming a channel region of a thin film transistor in said island, wherein said channel region includes grain boundaries, which extend in a direction that is at a fixed angle with a direction of said channel region.
Claim 25
Independent Claim
116 words
A method for manufacturing a semiconductor device comprising the steps of: forming an insulating layer on a glass substrate; disposing a catalyst containing material in contact with a selected region of a semiconductor film on said insulating layer, said catalyst being selected from the group IV; crystallizing said semiconductor film by heating where crystals extend from said selected region in parallel with said insulating surface; patterning said semiconductor film into an island after said step of crystallization thereof; and forming a channel region of a thin film transistor in said island, wherein said channel region includes grain boundaries, which extend in a direction that is at a fixed angle with a direction of said channel region.
Claim 26
Dependent Claim
27 words
A method according to claim 19 wherein said direction of said channel region is a direction linking a source region to a drain region of said transistor.
Claim 27
Dependent Claim
28 words
The method of claim 19 wherein said catalyst containing material is formed by a method selected from the group consisting of sputtering, vapor deposition, coating and spin coating.
Claim 28
Dependent Claim
23 words
The method of claim 19 wherein said method further comprises the step of recrystallizing said semiconductor layer by light annealing after said crystallizing.
Claim 29
Dependent Claim
26 words
The method of claim 19 wherein the concentration of said catalyst in said selected region is 1×10 15 atoms/cm 3 to 5×10 19 atoms/cm 3 .
Claim 30
Independent Claim
117 words
A method for manufacturing a semiconductor device comprising the steps of: forming an insulating layer on a glass substrate; disposing a catalyst containing material in contact with a selected region of a semiconductor film on said insulating layer, said catalyst being selected from the group IV; crystallizing said semiconductor film by heating where crystals extend from said selected region in parallel with said insulating surface; patterning said semiconductor film into an island after said step of crystallization thereof; and forming a channel region of a thin film transistor in said island, wherein said channel region includes grain boundaries, which extend in a direction that is in parallel with a direction in which carriers of said transistor flow.
Claim 31
Independent Claim
117 words
A method for manufacturing a semiconductor device comprising the steps of: forming an insulating layer on a glass substrate; disposing a catalyst containing material in contact with a selected region of a semiconductor film on said insulating layer, said catalyst being selected from the group IV; crystallizing said semiconductor film by heating where crystals extend from said selected region in parallel with said insulating surface; patterning said semiconductor film into an island after said step of crystallization thereof; and forming a channel region of a thin film transistor in said island, wherein said channel region includes grain boundaries, which extend in a direction that is in parallel with a direction in which carriers of said transistor flow.
Claim 32
Dependent Claim
28 words
The method of claim 24 wherein said catalyst containing material is formed by a method selected from the group consisting of sputtering, vapor deposition, coating and spin coating.
Claim 33
Dependent Claim
23 words
The method of claim 24 wherein said method further comprises a step of recrystallizing said semiconductor layer by light annealing after said crystallizing.
Claim 34
Dependent Claim
22 words
The method of claim 24 wherein the concentration of said catalyst is 1×10 15 atoms/cm 3 to 5×10 19 atoms/cm 3 .
Claim 35
Independent Claim
119 words
The method for manufacturing a semiconductor device comprising the steps of: forming an insulating layer on a glass substrate; disposing a catalyst containing material in contact with a selected region of a semiconductor film on said insulating layer, said catalyst being selected from the group IV; crystallizing said semiconductor film by heating where crystals extend from said selected region in parallel with said insulating surface; patterning said semiconductor film into an island after said step of crystallization thereof; and forming a channel region of a thin film transistor in said island, wherein said channel region includes grain boundaries, which extend in a direction that is at a fixed angle with a direction in which carriers of said transistor flow.
Claim 36
Independent Claim
119 words
The method for manufacturing a semiconductor device comprising the steps of: forming an insulating layer on a glass substrate; disposing a catalyst containing material in contact with a selected region of a semiconductor film on said insulating layer, said catalyst being selected from the group IV; crystallizing said semiconductor film by heating where crystals extend from said selected region in parallel with said insulating surface; patterning said semiconductor film into an island after said step of crystallization thereof; and forming a channel region of a thin film transistor in said island, wherein said channel region includes grain boundaries, which extend in a direction that is at a fixed angle with a direction in which carriers of said transistor flow.
Claim 37
Dependent Claim
30 words
The method of claim 28 wherein the concentration of said catalyst in said selected region of the semiconductor layer is 1×10 15 atoms/cm 3 to 5×10 19 atoms/cm 3 .
Claim 38
Independent Claim
115 words
A method for manufacturing a semiconductor device comprising the steps of: disposing a crystallization promoting material in contact with a selected region of semiconductor layer on an insulating surface of a substrate to be crystallized, said material including an element selected from the IV group; crystallizing said semiconductor layer by heating where needle or pillar crystals extend from said selected region in a direction horizontally with said insulating surface; patterning said semiconductor film into an island after the step of crystallization thereof; and forming a channel region of a thin film transistor in said island, wherein said needle or pillar crystals extend in a direction that is coincident with a direction of said channel region.
Claim 39
Independent Claim
115 words
A method for manufacturing a semiconductor device comprising the steps of: disposing a crystallization promoting material in contact with a selected region of semiconductor layer on an insulating surface of a substrate to be crystallized, said material including an element selected from the IV group; crystallizing said semiconductor layer by heating where needle or pillar crystals extend from said selected region in a direction horizontally with said insulating surface; patterning said semiconductor film into an island after the step of crystallization thereof; and forming a channel region of a thin film transistor in said island, wherein said needle or pillar crystals extend in a direction that is coincident with a direction of said channel region.
Claim 40
Dependent Claim
22 words
The method of claim 30 wherein the concentration of said element is 1×10 15 atoms/cm 3 to 5×10 19 atoms/cm 3 .
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