Semiconductor memory device having internal voltage booster circuit coupled to bit line charging/equalizing circuit

Claim 2

A semiconductor memory device comprising: first and second bit lines; a boosted voltage generating circuit, connected to a power supply voltage, for constantly generating a boosted voltage while the power supply voltage is supplied thereto, the boosted voltage having a voltage level higher than a voltage level of said power supply voltage; and a charging/equalizing circuit, connected to said first and second bit lines and coupled to said boosted voltage generating circuit, responsive to a charging/equalizing control signal having a first voltage level equal to the voltage level of the boosted voltage, for charging said first and second bit lines with a charging voltage, and for equalizing said first and second bit lines at the same equalized voltage level.

Claim 3

The semiconductor memory device according to claim 1, wherein said charging/equalizing control signal is set to the voltage level of the boosted voltage when said first and second bit lines are being charged with the charging voltage.

Claim 4

The semiconductor memory device according to claim 1, wherein said charging/equalizing circuit includes: a first MOS transistor having a source-drain path connected between said first bit line and a node which is supplied with the charging voltage, and a gate which is supplied with the charging/equalizing control signal; a second MOS transistor having a source-drain path connected between said second bit line and said node, and a gate which is supplied with the charging/equalizing control signal; and a third MOS transistor having a source-drain path connected between said first and second bit lines, and a gate which is supplied with the charging/equalizing control signal.

Claim 5

The semiconductor memory device according to claim 3, wherein said first, second, and third MOS transistors have the same channel conductivity type.

Claim 6

The semiconductor memory device according to claim 1, wherein said charging/equalizing circuit includes: a first MOS transistor having a source-drain path connected between said first bit line and a node which is supplied with the charging voltage, and a gate which is supplied with the charging/equalizing control signal; and a second MOS transistor having a source-drain path connected between said second bit line and said node, and a gate which is supplied with the charging/equalizing control signal.

Claim 7

The semiconductor memory device according to claim 5, wherein said first and second MOS transistors have the same channel conductivity type.

Claim 8

The semiconductor memory device according to claim 1, wherein said boosted voltage generating circuit includes: a reference voltage generating circuit for generating a reference voltage; a boosting circuit responsive to a boosting circuit control signal for generating the boosted voltage by boosting the power supply voltage; a voltage converting circuit for converting the boosted voltage to a converted voltage having a voltage level lower than the voltage level of the boosted voltage; and a voltage comparing circuit for comparing the reference voltage and the converted voltage to generate a comparison signal, and for outputting the comparison signal as the boosting circuit control signal.

Claim 9

The semiconductor memory device according to claim 1, wherein said charging/equalizing control signal has a second voltage level equal to a ground level.

Claim 10

A semiconductor memory device comprising: first and second bit lines; a charging/equalizing circuit, connected to said first and second bit lines, responsive to a charging/equalizing control signal for charging said first and second bit lines with a charging voltage, and for equalizing said first and second bit lines at the same equalized voltage level; a boosted voltage generating circuit, connected to a power supply voltage, for constantly generating a boosted voltage having a voltage level higher than a voltage level of said power supply voltage; and a level converting circuit, connected to said charging/equalizing circuit and to said boosted voltage generating circuit, for converting an input control signal at a first voltage level into a converted control signal at the voltage level of said boosted voltage, and for outputting the converted control signal as said charging/equalizing control signal.

Claim 11

A semiconductor memory device comprising: first and second bit lines; a charging/equalizing circuit, connected to said first and second bit lines, responsive to a charging/equalizing control signal for charging said first and second bit lines with a charging voltage, and for equalizing said first and second bit lines at the same equalized voltage level; a boosted voltage generating circuit, connected to a power supply voltage, for constantly generating a boosted voltage having a voltage level higher than a voltage level of said power supply voltage; and a level converting circuit, connected to said charging/equalizing circuit and to said boosted voltage generating circuit, for converting an input control signal at a first voltage level into a converted control signal at the voltage level of said boosted voltage, and for outputting the converted control signal as said charging/equalizing control signal.

Claim 12

The semiconductor memory device according to claim 9, wherein said charging/equalizing circuit includes: a first MOS transistor having a source-drain path connected between said first bit line and a node which is supplied with the charging voltage, and a gate which is supplied with the charging/equalizing control signal; a second MOS transistor having a source-drain path connected between said second bit line and said node, and a gate which is supplied with the charging/equalizing control signal; and a third MOS transistor having a source-drain path connected between said first and second bit lines, and a gate which is supplied with the charging/equalizing control signal.

Claim 13

The semiconductor memory device according to claim 10, wherein said first, second, and third MOS transistors have the same channel conductivity type.

Claim 14

The semiconductor memory device according to claim 9, wherein said charging/equalizing circuit includes: a first MOS transistor having a source-drain path connected between said first bit line and a node which is supplied with the charging voltage, and a gate which is supplied with the charging/equalizing control signal; and a second MOS transistor having a source-drain path connected between said second bit line and said node, and a gate which is supplied with the charging/equalizing control signal.

Claim 15

The semiconductor memory device according to claim 12, wherein said first and second MOS transistors have the same channel conductivity type.

Claim 16

The semiconductor memory device according to claim 9, wherein said boosted voltage generating circuit includes: a reference voltage generating circuit for generating a reference voltage; a boosting circuit responsive to a boosting circuit control signal for generating the boosted voltage by boosting the power supply voltage; a voltage converting circuit for converting the boosted voltage to a converted voltage having a voltage level lower than the voltage level of the boosted voltage; and a voltage comparing circuit for comparing the reference voltage and the converted voltage to generate a comparison signal, and for outputting the comparison signal as the boosting circuit control signal.

Claim 17

The semiconductor memory device according to claim 9, wherein said input control signal has a second level voltage level equal to a ground voltage.

Claim 18

A semiconductor memory device comprising: first and second bit lines; memory cells connected to said first and second bit lines; word lines, connected to said memory cells, for selecting said memory cells in accordance with a word line driving signal; a boosted voltage generating circuit, connected to a power supply voltage, for constantly generating a boosted voltage having a voltage level higher than a voltage level of said power supply voltage; a charging/equalizing circuit, connected to said first and second bit lines and responsive to a charging/equalizing control signal, for charging said first and second bit lines with a charging voltage, and for equalizing said first and second bit lines at the same equalized voltage level; a level converting circuit, connected to said charging/equalizing circuit and to said boosted voltage generating circuit, for converting an input control signal at a first input control signal voltage level into a converted control signal at the voltage level of the boosted voltage, and for outputting the converted control signal as the charging/equalizing control signal; and a word line selecting/driving circuit, connected to said word lines and to said boosted voltage generating circuit and responsive to address signals for generating selection signals having a first selection signal voltage level equal to the voltage level of the boosted voltage, and for outputting the selection signals as the word line driving signals.

Claim 19

A semiconductor memory device comprising: first and second bit lines; memory cells connected to said first and second bit lines; word lines, connected to said memory cells, for selecting said memory cells in accordance with a word line driving signal; a boosted voltage generating circuit, connected to a power supply voltage, for constantly generating a boosted voltage having a voltage level higher than a voltage level of said power supply voltage; a charging/equalizing circuit, connected to said first and second bit lines and responsive to a charging/equalizing control signal, for charging said first and second bit lines with a charging voltage, and for equalizing said first and second bit lines at the same equalized voltage level; a level converting circuit, connected to said charging/equalizing circuit and to said boosted voltage generating circuit, for converting an input control signal at a first input control signal voltage level into a converted control signal at the voltage level of the boosted voltage, and for outputting the converted control signal as the charging/equalizing control signal; and a word line selecting/driving circuit, connected to said word lines and to said boosted voltage generating circuit and responsive to address signals for generating selection signals having a first selection signal voltage level equal to the voltage level of the boosted voltage, and for outputting the selection signals as the word line driving signals.

Claim 20

The semiconductor memory device according to claim 16, wherein said charging/equalizing circuit includes: a first MOS transistor having a source-drain path connected between said first bit line and a node which is supplied with the charging voltage, and a gate which is supplied with the charging/equalizing control signal; a second MOS transistor having a source-drain path connected between said second bit line and said node, and a gate which is supplied with the charging/equalizing control signal; and a third MOS transistor having a source-drain path connected between said first and second bit lines, and a gate which is supplied with the charging/equalizing control signal.

Claim 21

The semiconductor memory device according to claim 17, wherein said first, second, and third MOS transistors have the same channel conductivity type.

Claim 22

The semiconductor memory device according to claim 16, wherein said boosted voltage generating circuit includes: a reference voltage generating circuit for generating a reference voltage; a boosting circuit responsive to a boosting circuit control signal for generating the boosted voltage by boosting the power supply voltage; a voltage converting circuit for converting the boosted voltage to a converted voltage having a voltage level lower than the voltage level of the boosted voltage; and a voltage comparing circuit for comparing the reference voltage and the converted voltage to generate a comparison signal, and for outputting the comparison signal as said boosting circuit control signal.

Claim 23

The semiconductor memory device according to claim 16, wherein said address signals are row address signals.

Claim 24

The semiconductor memory device according to claim 20, further comprising: a plurality of address lines for supplying said row address signals; and a voltage line, extending in a direction parallel to said plurality of address lines, for supplying the boosted voltage.

Claim 25

The semiconductor memory device according to claim 22, wherein a period of time when the charging/equalizing control signal has a voltage level equal to the voltage level of the boosted voltage does not overlap with a period of time when the selection signals have a voltage level equal to the voltage level of the boosted voltage.

Claim 26

The semiconductor memory device according to claim 16, wherein said word line selecting/driving circuit includes: row decoders, corresponding in number to the word lines, for decoding first ones of the address signals and outputting row decoder output signals; pre-decoders, corresponding in number to the word lines, for decoding second ones of the address signals and outputting pre-decoder output signals; and word line drivers, corresponding in number to the word lines, for outputting the pre-decoder output signals as said word line driving signals in accordance with the row decoder output signals.

Claim 27

The semiconductor memory device according to claim 23, wherein each of said row decoders includes: a first transistor, which is of a first polarity, for pre-charging an output node of said row decoder to a voltage level equal to the voltage level of the boosted voltage on the basis of a pre-charging control signal; and a plurality of second transistors which are of a second polarity and respectively have a source-drain path and a gate, said source-drain paths being connected in series between the output node of said row decoder and a ground potential node, and the gates receiving the first ones of the address signals.

Claim 28

The semiconductor memory device according to claim 23, wherein each of said pre-decoders includes: a first transistor, which is of a first polarity, for pre-charging an output node of said pre-decoder to a voltage level equal to the voltage level of the boosted voltage on the basis of a pre-charging control signal; and a plurality of second transistors which are of a second polarity and respectively have a source-drain path and a gate, said source-drain paths being connected in series between the output node of said pre-decoder and a ground potential node, and the gates receiving the second ones of the address signals.

Claim 29

The semiconductor memory device according to claim 23, wherein each of said word line drivers is an inverter circuit, said inverter circuit being supplied with one of the pre-decoder output signals as a first power supply potential and a ground potential as a second power supply potential, and said inverter circuit further supplied with one of the row decoder output signals.

Claim 30

A semiconductor memory device comprising: memory cells connected to bit lines and word lines; a first circuit connected to said bit lines and activated during a first active period; a second circuit connected to said word lines and activated during a second active period which does not overlap with the first active period; and a boosted voltage generating circuit, connected to a power supply voltage and to both said first and second circuits, for constantly generating a boosted voltage having a voltage level higher than a voltage level of said power supply voltage.

Claim 31

A semiconductor memory device comprising: memory cells connected to bit lines and word lines; a first circuit connected to said bit lines and activated during a first active period; a second circuit connected to said word lines and activated during a second active period which does not overlap with the first active period; and a boosted voltage generating circuit, connected to a power supply voltage and to both said first and second circuits, for constantly generating a boosted voltage having a voltage level higher than a voltage level of said power supply voltage.

Claim 32

The semiconductor memory device according to claim 27, wherein said first circuit is a level converting circuit.

Claim 33

The semiconductor memory device according to claim 27, wherein said second circuit is a word line selecting/driving circuit.